10OCT07 Search Results

353830-1

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2007 APR .2007. RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. DIST LOC ALL RIGHTS RESERVED. REVISIONS J DESCRIPTION LTR C1 ADDED - 7 ECR—0 7 —024059 DATE DWN APVD 10OCT07 TS KB 4-PLC D D <> TOP 0. i+

Contextual Info: | TH IS DRAWING IS UN PU B LISH ED. c COPYRIGHT 200 7 APR .2M7. RELEASED FOR PUBUCATlflN a l l R i6 h TS RESERvEt. REVISIONS p BY TYCO ELECTRONICS CORPORATION. LTR C1 D ESC RIPTIO N ADDED - 7 ECR—0 7 —024059 DATE DWN APVD 10OCT07 TS KB (4PLC) T O P OF P O S T

AN609

Contextual Info: Si5519DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN609

Abstract: SQ9945AEY
Contextual Info: SQ9945AEY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

4392

Abstract: AN609 SUM70N03-09CP
Contextual Info: SUM70N03-09CP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN609

Abstract: SUM60N10-17
Contextual Info: SUM60N10-17_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

3381

Abstract: U 1560 AN609 Si7156DP 125-88-9
Contextual Info: Si7156DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 3600 MHz 3800 MHz Tuning Voltage: 0.5 4.5 VDC Supply Voltage: 4.75 5.0 5.25 VDC Output Power: -2.0 +1.0 +4.0 dBm Supply Current: 15 25 Harmonic Suppression 2nd Harmonic : -15 Pushing:

ASTM d792

Abstract: ASTM d792-66
Contextual Info: RHW Heat-Shrinkable, Heavy Wall, Polyolefin Tubing Table 1: Dimensions Minimum Expanded I.D. D Size 9/3 13/4 20/6 33/8 43/12 51/16 70/21 85/25 105/30 130/36 160/50 180/50 In. .354 .512 .787 1.299 1.693 2008 2.756 3.346 4.134 5.118 6.299 7.087 Maximum Recovered

Contextual Info: IHLP-1616BZ-01 Vishay Dale Low Profile, High Current Inductor FEATURES • Shielded construction • Frequency range up to 5.0 MHz RoHS • Lowest DCR/µH, in this package size COMPLIANT • Handles high transient current spikes without saturation • Ultra low buzz noise, due to composite construction

Contextual Info: PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: MAX UNITS 225 MHz 6.5 VDC Upper Frequency: 425 Tuning Voltage: 0.5 Supply Voltage: 6.75 7.0 7.25 VDC +3.0 +6.0 dBm 5 15 Output Power: Supply Current: MHz mA Harmonic Suppression 2nd Harmonic : -15 Pushing:

AN609

Abstract: SUM60P05-11LT SUM60P05
Contextual Info: SUM60P05-11LT_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

sum65n20 datasheet

Abstract: AN609 SUM65N20-30
Contextual Info: SUM65N20-30_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: MAX UNITS 640 MHz 4.7 VDC Upper Frequency: 690 Tuning Voltage: 0.3 MHz Supply Voltage: 4.75 5.0 5.25 VDC Output Power: +5.0 dBm +6.5 +8.0 Supply Current: 15 25 Harmonic Suppression 2nd Harmonic : -12 Pushing:

SUM75N04

Abstract: 74257 AN609 SUM75N04-05L 37662
Contextual Info: SUM75N04-05L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

TMCM-170

Abstract: Programming maxon motor a- max bldc motor motion maxon motor a max PID position
Contextual Info: TMCM-170 and -171 BLDC-module Reference and Programming Manual Version 1.14 Dec 20h, 2007 Trinamic Motion Control GmbH & Co. KG Sternstraße 67 D – 20357 Hamburg, Germany http://www.trinamic.com TMCM-170 and TMCM-171 MODULE – Reference and Programming Manual

marking A97

Abstract: AN 1515 AN1515 AN-1515 A Comprehensive Study of the Howland Current AN1515 Howland National
Contextual Info: LMV841/LMV842/LMV844 CMOS Input, RRIO, Wide Supply Range Operational Amplifiers General Description Features The LMV841/LMV842/LMV844 are low-voltage and low-power operational amplifiers that operate with supply voltages ranging from 2.7V to 12V and have rail-to-rail input and output

TSOT-23

Abstract: TSOT23
Contextual Info: CAT6221 300mA CMOS Dual LDO Regulator FEATURES DESCRIPTION „ Two outputs with guaranteed 300mA peak output current The 300mA CMOS Dual LDO CAT6221 combines in a single TSOT-23 6-lead package two low dropout regulators LDO , each with its own enable pin.

CAT5419

Abstract: CAT5419WI-10-T1 CAT5419WI-25-T1 CAT5419YI-25-T2 MS-013
Contextual Info: CAT5419 Dual Digitally Programmable Potentiometers DPP with 64 Taps and 2-wire Interface FEATURES DESCRIPTION „ Two linear-taper digital potentiometers The CAT5419 is two Digitally Programmable Potentiometers (DPP™) integrated with control logic and 16 bytes of NVRAM memory.

Frequency Control Products

Abstract: CB2V
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book FREQUENCY CONTROL PRODUCTS vishay DALE vsE-db0020-1012 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

SUM70N04-07L

Abstract: AN609
Contextual Info: SUM70N04-07L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

8843

Abstract: 2103 datasheet AN609 Si4448DY 150342
Contextual Info: Si4448DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

TSOT-23

Abstract: TSOT23
Contextual Info: CAT6221 300mA CMOS Dual LDO Regulator FEATURES DESCRIPTION „ Two outputs with guaranteed 300mA peak output current The 300mA CMOS Dual LDO CAT6221 combines in a single TSOT-23 6-lead package two low dropout regulators LDO , each with its own enable pin.

IHLP-1616BZ-11

Contextual Info: IHLP-1616BZ-11 Vishay Dale Low Profile, High Current Inductor FEATURES • Shielded construction • Frequency range up to 1.0 MHz RoHS • Lowest DCR/µH, in this package size COMPLIANT • Handles high transient current spikes without saturation • Ultra low buzz noise, due to composite construction