10N7 Search Results
10N7 Price and Stock
Vishay Intertechnologies RLP10N7R230DB25- Boxed Product (Development Kits) (Alt: RLP10N7R230DB25) |
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RLP10N7R230DB25 | Box | 9 Weeks | 50 |
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RLP10N7R230DB25 | Bulk | 50 |
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Vishay Intertechnologies RLP10N7R230DB00- Boxed Product (Development Kits) (Alt: RLP10N7R230DB00) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RLP10N7R230DB00 | Box | 9 Weeks | 10 |
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RLP10N7R230DB00 | Bulk | 10 |
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onsemi NTMFS10N7D2C- Tape and Reel (Alt: NTMFS10N7D2C) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NTMFS10N7D2C | Tape & Reel | 68 Weeks | 3,000 |
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NTMFS10N7D2C | Tape & Reel | 2 | 100 |
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| NTMFS10N7D2C | Cut Tape | 2 | 1 |
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| NTMFS10N7D2C | Tape & Reel | 3,000 |
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NTMFS10N7D2C | 795 | 1 |
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NTMFS10N7D2C | 3,000 |
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NTMFS10N7D2C | 53 Weeks | 3,000 |
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NTMFS10N7D2C | 53 Weeks | 3,000 |
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STMicroelectronics STH110N7F6-2- Bulk (Alt: STH110N7F6-2) |
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STH110N7F6-2 | Bulk | 1,000 |
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STH110N7F6-2 | 53 Weeks | 2,000 |
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STH110N7F6-2 | 26 Weeks | 1,000 |
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STH110N7F6-2 | 340 |
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ams OSRAM Group LSG T676-P7R-1-0+N7P9-24-- Tape and Reel (Alt: Q65111A1615) |
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LSG T676-P7R-1-0+N7P9-24- | Tape & Reel | 12 Weeks | 2,000 |
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10N7 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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10N70
Abstract: MOSFET 700V 10A 10N70L mosfet 350v 10A 700v 10A mosfet 10N70L-TF1-T 700V mosfet driver
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10n70o-220fo-220f1qw-r502-572+6 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary 10N70Z-Q Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N70Z-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a |
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10n70z-q10n70zl-tf1-t10n70zg-tf1-tqw-r502-b20 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N70Z Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N70Z is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a |
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10n70zqw-r502-935 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N70-C Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N70-C is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a |
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10n70-c10n70l-tf3-tatqw-r502-a80 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N70 Preliminary Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC 10N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a |
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10n70o-220fo-220f1qw-r502-572 | |
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Contextual Info: 10N70 UNISONIC TECHNOLOGIES CO., LTD Preliminary Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220F The UTC 10N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a |
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10n70o-220fo-220f1qw-r502-572 | |
10N75
Abstract: power mosfet 501
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10n75o-220o-220fo-220f1+2 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N75 Preliminary Power MOSFET 10A, 750V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 10N75 is a N-channel mode power MOSFET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specialized in allowing a |
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10n75o-220o-220fo-220f1+1 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N70K Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N70K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc. |
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10n70k10n70kl-tf1-t10n70kg-tf1-to-220f1+1 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N70-Q Preliminary Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220F The UTC 10N70-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a |
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10n70-qo-220fo-220f1qw-r502-967 | |
14n391k
Abstract: varistor 10N391K 14n431k VARISTOR 14S431K 10n431k 14N271K 10N471K JVR-14N391K 10S471K 10N391K
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jvr-10n821kjvr-10n781kjvr-10n751kjvr-10n561k+13 | |
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Contextual Info: 10N70R/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 0.6Ω ID G 10A S Description 10N70 series are specially designed as main switching devices for |
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ap10n70r/pap10n70265vaco-220+2 | |
V23074-A2002-A403
Abstract: V23074-A1001-A403 V23074-A1002-A403 V23074 v23074-a1001 v23074-a1001-a402 5 pin relay 12vdc free 1800-S Tyco V23074 6 pin relay 12vdc with NO NC
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24vdcpretensioner1414971-4v23074-a2002-a403v23074-a1001-a403+8 | |
cal e6c
Abstract: IC free bu 2508 af equivalent cx 2601 SF.C 2805 EC norma installation tester xe 2sa 5200 power amp EM3870 relay TRK 1703 YE EI- 33C
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i/i1112mnurqk77cal e6c+9 | |
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10N70PContextual Info: 10N70R/P-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 650V RDS ON 0.6Ω ID G 10A S Description 10N70 series are specially designed as main switching devices for |
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ap10n70r/p-aap10n70265vaco-220+2 | |
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Contextual Info: 10N70W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 0.6Ω ID G 10A S Description 10N70 series are specially designed as main switching devices for |
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ap10n70wap10n70265vac10n70w | |
858787A
Abstract: TE1088 45h11 VF4A-65F11-S01 TE1088-R1
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858787ate108845h11vf4a-65f11-s01+1 | |
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Contextual Info: 10N70W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristic Simple Drive Requirement BVDSS 600V RDS ON 0.6 ID G 10A S Description 10N70 series are specially designed as main switching devices for |
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ap10n70wap10n70265vac10n70w | |
10N70Contextual Info: 10N70I-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D BVDSS RDS ON Fast Switching Characteristic Simple Drive Requirement ID G 650V 0.62 10A S Description Advanced Power MOSFETs from APEC provide the designer with |
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ap10n70i-ao-220cfm10n70i10n70 | |
74CBT3245A
Abstract: 14H6 14K5 14H8 TC R508 10N3 14H7 FR-134 TP1254 10J7
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sc00174cbt3245a14h614k5+7 | |
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Contextual Info: ESTABLISHED RELIABILITY M ETAL FILM RESISTORS MIL-R-55182 FEATURES * 100% stabilization and screening tests. Group A Testing, if desired, to customer requirements • Meets requirements of MIL-R-55182 • Failure Rate: Verified Failure Rate Contact factory for current level |
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mil-r-55182rnc50erc-55erc-60+2 | |
TE1347-82
Abstract: for 40A 12VDC relay 45h11 10N7 VF4A VF4A-65F11-S01 vf4a-1 TE1344-I2 mini iso shrouded relays
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12vdc60/45a40/30a17/12a+9 | |
tyco relay v23145
Abstract: V23145 ISO 7588 12vdc 30a relay MICRO RELAY
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12vdc1800s50/300mvrdv23145-l1101-a402+5 | |
ssh10n70
Abstract: 10N70
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ssh10n7010n70 | |