10N65 Search Results

10n65

Abstract: tf 10n65
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N65 Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N65K Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N65K Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N65K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.

10n65

Abstract: 10N65G-TA3-T utc10n65
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N65 Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche

10n65

Abstract: UTC10N65 10N60L-TF2-T 10N65L-TA3-T 10N65G
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N65 Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high

Contextual Info: Photoelectric sensors FVDK 10N65Y0 dimension drawing general data photo actual range Sb FSE 200C1002 320 mm sensing distance Tw (FUE 200C1003) 90 mm light source pulsed red LED light indicator 1 x 1-digit display alignment / soiled lens indicator LED green

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N65K-MT Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65K-MT is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.

"7 Segment Display"

Abstract: light dark sensor circuit baumer fvdk 10p60y0 7-SEGMENT baumer "Infrared LED" 10p60 Baumer fvdk baumer electric 2 10N60Y0
Contextual Info: Plastic fiber optic sensors Series 10 Sensitivity adjustable by teach-in Sb 540 mm / Tw 150 mm Standard PNP light/dark operate FVDK 10P60Y0 Remote Teach-in FVDK 10P65Y0 4102010 NPN light/dark operate FVDK 10N60Y0 FVDK 10N65Y0 technical data actual range Sb through beam ø 1,5 mm

f10n65

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N65 Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high

Contextual Info: Photoelectric sensors FVDK 10N65Y0 dimension drawing general data photo actual range Sb FSE 200C1002 320 mm sensing distance Tw (FUE 200C1003) 90 mm light source pulsed red LED light indicator 1 x 1-digit display alignment / soiled lens indicator LED green

Contextual Info: Photoelectric sensors FVDK 10N65Y0 dimension drawing general data photo actual range Sb FSE 200C1002 320 mm sensing distance Tw (FUE 200C1003) 90 mm light source pulsed red LED light indicator 1 x 1-digit display alignment / soiled lens indicator LED green

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N65K Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N65 Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche

on/927 DIODE

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N65Z Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65Z is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high

Contextual Info: Photoelectric sensors FVDK 10N65Y0 Lichtleitergeräte und Lichtleiter dimension drawing general data photo actual range Sb FSE 200C1002 320 mm sensing distance Tw (FUE 200C1003) 90 mm light source pulsed red LED light indicator 1 x 1-digit display alignment / soiled lens indicator

10N65T

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N65T Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65T is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N65Z-Q Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65Z-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high

light dark sensor circuit

Abstract: "7 Segment Display" baumer fvdk 10p60y0 "Infrared LED" Teac* baumer 7-SEGMENT fvdk 10p60y0 baumer electric FVDK 10N60Y0 baumer Baumer Electric
Contextual Info: Plastic fiber optic sensors Series 10 PNP Sensitivity adjustable by teach-in Sb 540 mm / Tw 150 mm light/dark operate Standard Remote Teach-in FVDK 10P60Y0 FVDK 10P65Y0 4102010 4102009 NPN light/dark operate FVDK 10N60Y0 FVDK 10N65Y0 technical data actual range Sb through beam ø 1,5 mm

fvdk 10p60y0

Abstract: 10P60Y0 baumer fvdk 10p60y0
Contextual Info: Photoelectric sensors FVDK 60 sample drawing sample picture general data actual range Sb FSE 200C1002 320 mm sensing distance Tw (FUE 200C1003) 90 mm light source pulsed red LED light indicator 1 x 1-digit display alignment / soiled lens indicator LED green

10N65K3

Contextual Info: 10N65K3, 10N65K3, 10N65K3, 10N65K3 N-channel 650 V, 0.75 Ω typ., 10 A SuperMESH3 Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packages Datasheet - production data Features TAB Order codes 3 1 1 RDS on max ID PTOT 10N65K3 3 D2PAK

uc3973

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UC3973 LINEAR INTEGRATED CIRCUIT LOW COST POWER-SAVING MODE PWM CONTROLLER FOR FLYBACK CONVERTERS  DESCRIPTION The UC3973 is a high performance current mode PWM controller ideally suited for low standby power. Low VDD startup

Contextual Info: 10N65K3 045Y N-channel 650 V, 0.75 Ω typ., 10 A Zener-protected SuperMESH3 Power MOSFET in a TO-220FP narrow leads package Datasheet − preliminary data Features Order code VDS 10N65K3(045Y) 650 V RDS(on) max ID PTOT 1Ω 10 A 35 W • 100% avalanche tested

Contextual Info: Photoelectric sensors FVDK 60 sample drawing sample picture electrical data response time / release time < 0,5 ms voltage supply range +Vs 10 . 30 VDC current consumption max. 50 mA voltage drop Vd < 1 VDC output function light / dark operate switchable

10N65

Abstract: Power MOSFET Wafer 3VD446650YL
Contextual Info: 3VD446650YL 3VD446650YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD446650YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; Ø Advanced termination scheme to provide enhanced voltage-blocking capability;