10N65B
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AK Semiconductor
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N-channel MOSFET 10N65B with 650V drain-source voltage, 10A continuous drain current, 0.8 ohm typical on-resistance at 10V gate-source voltage, and TO-220/TO-263 package options. |
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10N65A
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AK Semiconductor
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10A 650V N-channel enhancement mode MOSFET with typical on-resistance of 0.8 ohm at VGS = 10V, available in TO-220C, TO-220F, and TO-263 packages, featuring low gate charge and high dv/dt capability. |
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SK10N65B-TF
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Shikues Semiconductor
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650V N-ch Planar MOSFET, RoHS Compliant, DS(ON),typ.=0.75 Ω@VGS=10V, Low Gate Charge, Fast Recovery Body Diode, Adaptor, Charger, SMPS Standby Power. |
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JMPC10N65BJ
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Jiangsu JieJie Microelectronics Co Ltd
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650V, 10A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 1.09 ohm at VGS = 10V, designed for fast switching, load switch, PWM, and power management applications. |
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SLP_F10N65AV
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Maplesemi
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650V N-Channel MOSFET with 10A continuous drain current, 0.77 ohm typical RDS(on) at VGS = 10V, low gate charge of 38.3nC, and high avalanche energy rating, suitable for high-efficiency power conversion applications. |
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SLF10N65C
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Maplesemi
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650V N-Channel MOSFET with 10A continuous drain current, 0.678 ohm typical RDS(on) at VGS=10V, low gate charge of 38nC, and fast switching for high-efficiency power applications. |
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SLP_F10N65C
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Maplesemi
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650V N-Channel MOSFET with 10A continuous drain current, 0.85Ω maximum RDS(on) at VGS = 10V, low gate charge of 48nC typical, suitable for high-efficiency power conversion applications. |
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JMPF10N65BJ
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Jiangsu JieJie Microelectronics Co Ltd
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650V, 10A N-channel Enhancement Mode Power MOSFET in TO-220FP-3L package with RDS(ON) less than 0.95 ohm at VGS = 10V, designed for fast switching, load switch, PWM, and power management applications. |
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SLF10N65S
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Maplesemi
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650V N-Channel MOSFET with 10A continuous drain current, 0.8 ohm typical RDS(on) at VGS = 10V, low gate charge of 28.5nC, and high avalanche ruggedness, suitable for high-efficiency power conversion applications. |
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F10N65
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Shandong Jingdao Microelectronics Co Ltd
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N-channel power MOSFET in ITO-220ABW package, 650V drain-source voltage, 10A continuous drain current, RDS(ON) ≤ 1.0 ohm at VGS = 10V, designed for high-speed switching applications. |
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SLP_F10N65SV
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Maplesemi
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650V N-Channel MOSFET with 10A continuous drain current, 0.81 ohm typical RDS(on) at VGS = 10V, low gate charge of 28nC, fast switching, and 100% avalanche tested for high ruggedness. |
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SLP_F10N65A
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Maplesemi
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650V N-Channel MOSFET with 10A continuous drain current, 0.745 ohm typical RDS(on) at VGS = 10V, low gate charge of 19nC, and fast switching capability, suitable for high-efficiency power conversion applications. |
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MDD10N65F
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Microdiode Semiconductor
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650V N-Channel MOSFET, 10A, 1Ω@VGS=10V, 34.2nC Qg, TO-220F-3L/TO-220-3L, ultra low gate charge, fast switching, avalanche energy tested. |
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SL10N65F
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SLKOR
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10.0A, 650V, RDS(on)=0.80Ω@VGS=10V, Low Gate Charge, Low Crss, 100% Avalanche Tested, Fast Switching, Improved dv/dt Capability. |
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10N65B
