10KT Search Results

715C..KT...

Contextual Info: 15DK, 20DK, 30DK, 40DK, 10KT, 15KT, 20KT, 30KT, 40KT Series Vishay Cera-Mite Heavy Duty High Voltage Capacitors Fig 17 10 TO 40KV MOLDED EPOXY CASE D DIAMETER SIZE MAX. CODE in. mm DK GENERAL PURPOSE TYPE, EIA CLASS III APPLICATIONS: • High Voltage Power Supplies, CRTs, Lasers.

Contextual Info: KSR1110 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R=10Ktt) • Complement to KSR2110 ABSOLUTE MAXIMUM RATINGS (T,=25°C) Characteristic

SOT-23 marking WV

Abstract: KSR1106 KSR2106 C3003
Contextual Info: SAMSUNG SEM IC O N D U CTO R INC f - 3 5 . ^ 1 4 E D J 7^4145 000704^1^ KSR1106 NPNEPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In • SwitchingCircuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor <R,=10Kti, R,=47KO)

715c cera-mite 40kv

Abstract: 8-32NC-2B 20DKD68 N4700 40KV 15DK 10KT 715C..KT... 20DK 20KT 30KT
Contextual Info: 15DK, 20DK, 30DK, 40DK, 10KT, 15KT, 20KT, 30KT, 40KT Series Vishay Cera-Mite Heavy Duty High Voltage Capacitors Fig 17 10 TO 40KV MOLDED EPOXY CASE D DIAMETER SIZE MAX. CODE in. mm DK GENERAL PURPOSE TYPE, EIA CLASS III APPLICATIONS: • High Voltage Power Supplies, CRTs, Lasers.

N4700 40KV

Abstract: 715c cera-mite 40kv 15DK 10KT 15KT 20DK 20KT 30DK 30KT 40DK
Contextual Info: 15DK, 20DK, 30DK, 40DK, 10KT, 15KT, 20KT, 30KT, 40KT Series Vishay Cera-Mite Heavy Duty High Voltage Capacitors Fig 17 10 TO 40KV MOLDED EPOXY CASE D DIAMETER SIZE MAX. CODE in. mm DK GENERAL PURPOSE TYPE, EIA CLASS III APPLICATIONS: • High Voltage Power Supplies, CRTs, Lasers.

SC472

Abstract: CG21103 CG21403 CG21153 mbcg CG21303 CG21753 Mbcg21153 CG21203 QFP-208 fujitsu
Contextual Info: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE CG21 Series 0.8-micron CMOS Gate Arrays DESCRIPTION The CG21 series of 0.8 n m CMOS gate arrays are currently available in five device types with from 3 0K to 100K gates. Three more CG21 arrays, ranging from 10Kto 20Kgates, are now underdevelopm ent. These arrays achievethe u ltrafast speed of 0.37 ps per

mecl system design handbook

Abstract: motorola mecl system design handbook 1 half inch countersunk RG58/U Bnc connector MC10116 application HB205/d mc10101 MC10115 application MECL III Series mc10h141
Contextual Info: TND309 General Information for MECL 10Ht and MECL 10Kt http://onsemi.com APPLICATION NOTE High–Speed Logic . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MECL Products . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MECL Family Comparison . . . . . . . . . . . . . . . . . . 3

CERA-MITE Y5U 40DKD25

Abstract: CERA-MITE Y5U 20KVDC 15DK 10KT 15KT 20KT 30KT 30KVDC 40KT
Contextual Info: .DK., .KT. Vishay Cera-Mite High Voltage Disc Capacitors, Screw mounting 10KT. 15KT. 20KT. 30KT. 40KT. 10KVDC 15KVDC 20KVDC 30KVDC 40KVDC 15DK. 20DK. 30DK. 40DK. 15KVDC 20KVDC 30KVDC 40KVDC H max. D max. 8-32 NC-2B TAPPED HOLES. NOTE: Screw torque limit must be 12 inch pounds. Use #8-32, 3/16” long screw to prevent bottoming

20DK

Abstract: marking code DK CERA-MITE CERA-MITE Y5U 40DKD25 CERA-MITE Y5U N4700 40KVDC 30DKD47 15DK 20KVDC
Contextual Info: .DK., .KT. Vishay Cera-Mite High Voltage Disc Capacitors, Screw mounting 10KT. 15KT. 20KT. 30KT. 40KT. 10KVDC 15KVDC 20KVDC 30KVDC 40KVDC 15DK. 20DK. 30DK. 40DK. 15KVDC 20KVDC 30KVDC 40KVDC H max. D max. 8-32 NC-2B TAPPED HOLES. NOTE: Screw torque limit must be 12 inch pounds. Use #8-32, 3/16” long screw to prevent bottoming

30KVDC

Contextual Info: .DK., .KT. Vishay Cera-Mite High Voltage Disc Capacitors, Screw mounting 10KT. 15KT. 20KT. 30KT. 40KT. 10KVDC 15KVDC 20KVDC 30KVDC 40KVDC 15DK. 20DK. 30DK. 40DK. 15KVDC 20KVDC 30KVDC 40KVDC H max. D max. 8-32 NC-2B TAPPED HOLES. NOTE: Screw torque limit must be 12 inch pounds. Use #8-32, 3/16” long screw to prevent bottoming

MECL System Design Handbook

Abstract: TND309 MECL10k sealectro conhex sealectro MECL handbook MC1648 mecl logic conhex MC1648 internal schematic
Contextual Info: TND309 Family Characteristics for MECL 10Ht and MECL 10Kt http://onsemi.com APPLICATION NOTE GENERAL CHARACTERISTICS AND SPECIFICATIONS DC Parameters, such as output levels, threshold levels, and forcing functions. AC Parameters, such as propagation delays, rise and fall

715C..KT...

Contextual Info: 15DK, 20DK, 30DK, 40DK, 10KT, 15KT, 20KT, 30KT, 40KT Series Vishay Cera-Mite Heavy Duty High Voltage Capacitors Fig 17 10 TO 40KV MOLDED EPOXY CASE D DIAMETER SIZE MAX. CODE in. mm DK GENERAL PURPOSE TYPE, EIA CLASS III APPLICATIONS: • High Voltage Power Supplies, CRTs, Lasers.

7A SF 51

Abstract: BCE-078 2900Hz haf0
Contextual Info: Hybrid ICs T D K CORP SäE D • 0 0 2 1 2 4 0 D D D b 4 b ? T3T ■ TDKA DIGITAL AUDIO ACTIVE LOW PASS FILTERS, AL SERIES EXAMPLE A LO 17 A fi Part No. Filter factor AL017 9th 9th AL018 AL030 Cut-off frequency (kHz) Ripple (dB) Attenuation (dB) Distortion

Contextual Info: Understanding FLEX 10K Timing Introduction Altera devices provide predictable performance that is consistent from simulation to application. Before configuring a device, you can determine the w orst-case tuning delays for any design. You can use the timing

Contextual Info: t.ME D • Sfi7bbSl OGDTV'îS 007 « N X n MAXIM I N T E G R A T E D P R O D U C T S 19-3786; Rav 1; 9/92 / l / l / I X I / l / l High-Speed, Low -Voltage, M icropow er Op Amps D escrip tio n The MAX402/MAX438 require less than 75|iA of supply current while delivering 2MHz gain bandw idth with 7V/|xs

LM358

Abstract: ST 7915 LF353 IC 7915 LF353 APPLICATION lf353n H08C J08A LF353M LM1558
Contextual Info: NATL S E M I C O N D LINEAR SEE D B bSQ1124 Q0t7T33 5 • LF353 National Semiconductor LF353 Wide Bandwidth Dual JFET input Operational Amplifier T - 7 9 '/ 5 General Description Features These devices are low cost, high speed, dual JFET Input operational amplifiers with an Internally trimmed input offset

STK4201II

Abstract: STK4141 MG-200 STK4141X STK4201V TR12 TR16 TR18 STK4201-II
Contextual Info: Ordering number: EN 4609A Thick Film Hybrid 1C STK4201II No. 4609A 2ch AF Power Amplifier Split Power Supply (60W + 60W min,THD = 0.4%) Features Package Dimensions Muting circuit built-in to isolate all types of shock noise Current mirror circuit for low 0.4% total harmonic distortion

AD797SQ/883B

Contextual Info: ANALOG DEVICES Ultralow Distortion, Ultralow Noise Op Amp FEATURES Low Noise _ 0.9 n V /V fiz typ 1.2 n V /V H z max Input Voltage Noise (@1 kHz) 50 nV p -p Input Voltage Noise, 0.1 Hz to 10 Hz Low Distortion - 1 1 0 dB Total Harmonic Distortion (@ 20 kHz)

Contextual Info: ANALOG DEVICES Uttralow Drift OpAmp FEATURES Very High DC Precision 15 iV max Offset Voltage 0.1 M.V/0C max Offset Voltage Drift 0.35 |iV p-p max Voltage Noise (0.1 Hz to 10 Hz 8 V/pV min Open-Loop Gain 130 dB min CMRR 120 dB min PSRR 1 nA max Input Bias Current

IRM-8601S

Abstract: IRM8601 IRM8601S IRM-8601 IS09001
Contextual Info: 0ÆRJLIGKT IS 09001 Q S9000 APPROVED _ Miniature Type IRM Lateral IRM-8601S Features: Package Dimensions: • LOW VOLTAGE AND LOW POWER CONSUMPTION. • PHOTODIODE WITH INTEGRATED CIRCUIT • HIGH SENSITIVITY.

2N5417

Abstract: A 14U UD3008 2N5292 BD263 BD264A CI44 transistor t05 BC412 KIS434
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

M68HC05

Contextual Info: SECTION 3 MC68HC705C8 FUNCTIONAL DATA The MC68HC705C8 m icrocontroller MCU is a member of the M68HC05 Fam­ ily of low-cost, single-chip microcontrollers. The HCMOS technology used on the MC68HC705C8 combines smaller size and higher speeds w ith the low power and high noise im m unity of CMOS.

Nippon capacitors

Contextual Info: HB526R872ESN Series 4,194,304-word x 72-bit ECC x 2-bank Synchronous Dynamic RAM Module HITACHI ADE-203-799 (Z) Preliminary Rev. 0.1 Jul. 31, 1997 Description The HB526R872ESN belongs to 8 byte DIMM (Dual In-line Memory Module) family, and has been developed a as optimized main memory solution for 8 byte processor applications. The HB526R872ESN is

RT3062

Abstract: BLY98 2SC931 1768-0815 2SC1002 2SC1003 2SC807 2SC830 ta6200 2SC685
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I