10D 1J Search Results

Contextual Info: 50,8 + 0,2 1 1A IB 1C ID 2 3 1J 2CDL IK 2F 1M 2E IN 1DP PIN PIN PIN PIN PIN 25 7A 7B 7C 7D 26 7J 7K 7M 7N 27 11D 11C 11G 11B 4 2H 2G 2Q 2P 28 11DP he 11F 11A 5 2A 2B 2C 2D 6 7 2 J 3CDL 2K 3F 2M 3E 2N 2DP 29 30 31 10D lOCOL 10DP 10C 9C 10G 10F 9B 10B 10A 9A

Contextual Info: MC68302RC16 1/2 IL08 * ( VDD =+5V) C-MOS INTEGRATED MULTIPROTOCOL PROCESSOR -BOTTOM VIEW- N M L K J H G F E D C B A 1 2 3 4 5 6 7 8 9 10 11 12 13 PIN NO. 1A 1B 1C 1D 1E 1F 1G 1H 1J 1K 1L 1M 1N 2A 2B 2C 2D 2E 2F 2G 2H 2J 2K 2L 2M 2N 3A 3B 3C 3D 3E

IR 10D 9F

Contextual Info: •SUPER BRIGHT LED NUMERIC DISPLAY Stanley's alpha-num eric displays which incorporate super-bright LEDs produce vivid, brilliant displays. Em itted colors available are red, pure green, green, yellow and orange. Display types include segm ent type character heights 7.5mm to 25m m and the alpha

Contextual Info: NEC NEC Electronics Inc. MC-421000A36 1,048,576 x 36-Bit Dynamic CMOS RAM Module Description Pin Configuration The MC-421000A36 is a fast-page dynamic RAM mod­ ule organized as 1,048,576 words by 36 bits and de­ signed to operate from a single +5-volt power supply.

Rm73B1E

Abstract: RM73 RM73B2A RM73B2H RM73B3A RM73B2B RN73E2A koa RM73 RM73B2E KOA Speer Electronics RM73B1
Contextual Info: K O FLAT CHIP RESISTORS a\ SPEER ELECTRONICS, INC. DESCRIPTION OF CHIP RESISTORS - Seven 7 Available Sizes - 0402, 0603, 0805 1206, 1210, 2010, 2512 - 1/16 W att to 1 W att Power Ratings - 0.1 Ohm to 22 Meg Ohm Resistance Range - Tight Tolerance and Low TCR Available

83 fkm 592

Abstract: cd 6283 ic wiring diagram Double Acting Cylinder reed relay 3570 1301 151 d-J79 CDQ2B32-20D ECDQ2A D-J79W smc cq2b63 10 35L W1
Contextual Info: Compact Cylinder Series CQ2 ø12, ø16, ø20, ø25, ø32, ø40, ø50, ø63, ø80, ø100, ø125, ø140, ø160 ø180, ø200 With a short overall length, the space saving cylinder helps to make various jigs and equipment more compact. Variations Bore size mm

double acting cylinder

Abstract: smc d-f9n SMC D-A73 D-A80H D-J79W 83 fkm 592 D-A73 CDQ2B32-20D smc d-j79 reed relay 3570 1301 151
Contextual Info: Compact Cylinder Series CQ2 ø12, ø16, ø20, ø25, ø32, ø40, ø50, ø63, ø80, ø100, ø125, ø140, ø160 ø180, ø200 With a short overall length, the space saving cylinder helps to make various jigs and equipment more compact. Variations Bore size mm

smc d-f9p

Abstract: smc d-a73c SMC D-A73 cd 6283 ic smc d-f9n D-A73 M24 8.8 bolt smc d-j79 ROD 486 5000 circuit diagram for cd 6283
Contextual Info: Compact Cylinder Series CQ2 ø12, ø16, ø20, ø25, ø32, ø40, ø50, ø63, ø80, ø100, ø125, ø140, ø160 ø180, ø200 With a short overall length, the space saving cylinder helps to make various jigs and equipment more compact. Variations Bore size mm

VW3A

Abstract: S1139 30H1
Contextual Info: i i/e 508* i g A3H JO 133HS 31V0S 9NIMVdQ U3W01SÌD 868e^l°Q) 6AA00 IV ON 3Q03 39V0 V y]9wnN idvd 9 319Vi ]3S 1H9I3W oszs-n I 3ZI S ( 3dÀ1-A 90d) A19H3SSV 9NISÌ10H dVO NO111SOd2I S3IN3S (S20' )fr9'0 3WVN A{|a|psuuo^]_[ 31 .¿C./SCA/ 9NISnOH 319V1 33S

bd 9d

Abstract: SN74ALS29841
Contextual Info: SN74ALS29841 10-BIT BUS-INTERFACE D-TYPE LATCH WITH 3-STATE OUTPUTS S D A S 1 4 9 A - JU N E 1 9 8 8 - REVISED JA N U A R Y 1995 3-State Buffer-Type Outputs Drive Bus Lines Directly DW OR NT PACKAGE TOP VIEW Bus-Structured Pinout m Provides Extra Bus-Driving Latches

Contextual Info: SD57045 RF POWER TRANSISTORS The Ldm oS T FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs . . EXCELLENTTHERM AL STABILITY COMMON SOURCE CONFIGURATION • Pout = 45 W PEP with 13 dB gain @ 945 MHz . B eO FR EE PACKAGE DESCRIPTION The SD57045 is a common source N-Channel

Contextual Info: 1. M e c h a n ic a l D im e n s i o n s : 2 . S ch e m atic: o- Top view C3- 3. E l e c t r i c a l CG O OCL: LT> 1 .0 m H ± 1 0% R a te d ± 0.10 o a D 5 ,0 0 ± 0 .3 0 Q: O O ^ lo -H 10 1 .Q K H z I: 2 6 0 m A d c DOR: 2 .9 4 J E 0 0 .6 5 S p e c ific atio n s:

GUF10M

Abstract: GUF10A 202E DO-204AL GUF10
Contextual Info: GUF10A THRU GUF10M SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 1.0A FEATURE DO-41\DO-204AL High temperature metallurgically bonded construction Sintered glass cavity free junction Capability of meeting environmental standard of

Contextual Info: RGP10A THRU RGP10M SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:50 TO 1000V CURRENT: 1.0A FEATURE DO-41\DO-204AL High temperature metallurgically bonded construction Sintered glass cavity free junction Capability of meeting environmental standard of

LM3914

Abstract: 00b2
Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER SSA—B1 01 4 1W—MOD REV, A B 50.55 [1.990] 45.7Z [1,800] 4.06 [0,160] 10 PLS. 1.27 [0,050] I : I II II II I I I I 2.79 [0.110] DATE 9.28.00 11.12.02 1.02 [0.040] 3.81 [0.150] I C 03.046 [00.120] _ (2 PLS.) i B E.C.N. NUMBER AND REVISION COMMENTS

6n8p

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS INTEGRATED CIRCUIT µPD44322161, 44322181, 44322321, 44322361 32M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION Description The µPD44322161 is a 2,097,152-word by 16-bit, the µPD44322181 is a 2,097,152-word by 18-bit, the µPD44322321 is

6N8P

Abstract: 1N 9a
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS INTEGRATED CIRCUIT µPD44322163, 44322183, 44322323, 44322363 32M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION DOUBLE CYCLE DESELECT Description The µPD44322163 is a 2,097,152-word by 16-bit, the µPD44322183 is a 2,097,152-word by 18-bit, µPD44322323 is a

marking 1P

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS INTEGRATED CIRCUIT µ PD44321162, 44321182, 44321322, 44321362 32M-BIT ZEROSBTM SRAM PIPELINED OPERATION Description The µPD44321162 is a 2,097,152-word by 16-bit, the µPD44321182 is a 2,097,152-word by 18-bit, the µPD44321322 is a 1,048,576-word by 32-bit and the µPD44321362 is a 1,048,576-word by 36-bit ZEROSB static

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS INTEGRATED CIRCUIT µPD44321161, 44321181, 44321321, 44321361 32M-BIT ZEROSBTM SRAM FLOW THROUGH OPERATION Description The µPD44321161 is a 2,097,152-word by 16-bit, the µPD44321181 is a 2,097,152-word by 18-bit, the µPD44321321 is a 1,048,576-word by 32-bit and the µPD44321361 is a 1,048,576-word by 36-bit ZEROSB static

diode 060

Contextual Info: F U JI 2-Pack IGBT 600 V 100 A 2MBI100L-060 M U M Ë ïïr a iÊ IGBT MODULE ( L series Outline Drawings • Features • High Speed Switching • Low Saturation Voltage • Voltage Drive ■ Applications • Inverter for Motor Drive • AC and DC Servo Drive Amplifier

Contextual Info: O rd e rin g n u m b e r: E N 3 8 7 5 SB20-05Z No.3875 I Schottky B arrier Diode SAMYO 50V, 2A Rectifier A p p licatio n s • High frequency rectification switching regulators, converters, choppers . F e a tu re s •Low forward voltage (Vp max = 0.55V).

4MX9

Contextual Info: K7R323682M K7R321882M K7R320982M K7R320882M Preliminary 1Mx36 & 2Mx18 & 4Mx9 & 4Mx8 QDRTM II b2 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx9-bit, 4Mx8-bit QDRTM II b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. June, 30 2001

k7r161882b

Abstract: K7R160982B K7R161882B-FC25 K7R163682B K7R163682B-FC16 K7R163682B-FC20 K7R163682B-FC25
Contextual Info: K7R163682B K7R161882B K7R160982B K7R160882B Advance 512Kx36 & 1Mx18 & 2Mx9 & 2Mx8 QDRTM II b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit, 2Mx9-bit, 2Mx8-bit QDRTM II b2 SRAM Revision History Rev. No. 0.0 History Draft Date Remark 1. Initial document. Oct. 17. 2002

Contextual Info: [ O A _RK73B fe a tu re s • R u 0 2 thick film resistor elem ent •A nti-leaching nickel barrier terminations • 9 0 /1 0 solder plated terminations, standard •A vailable in 100% tin terminations no lead • Also available with epoxy bondable palladium silver