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    10B104 Search Results

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    10B104 Price and Stock

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    Nextgen Components 1210B104K501KA

    CAP.,SMD,1210,X7R,0.1UF,10%,500V
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    DigiKey 1210B104K501KA Tape & Reel 2,000,000 1,000
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    Samsung Electro-Mechanics CL10B104KB85PND

    CAP CER 0.1UF 50V X7R 0603
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    DigiKey () CL10B104KB85PND Tape & Reel 616,777 10,000
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    CL10B104KB85PND Digi-Reel 616,777 1
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    Samsung Electro-Mechanics CL10B104KB85PNL

    CAP CER 0.1UF 50V X7R 0603
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    DigiKey () CL10B104KB85PNL Tape & Reel 209,677 10,000
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    CL10B104KB85PNL Digi-Reel 209,677 1
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    CL10B104KB85PNL Cut Tape 14,677 1
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    Avnet Americas () CL10B104KB85PNL Ammo Pack 1
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    CL10B104KB85PNL Tape & Reel 20 Weeks 15,000
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    Samsung Electro-Mechanics CL10B104KB8NNND

    CAP CER 0.1UF 50V X7R 0603
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    DigiKey () CL10B104KB8NNND Digi-Reel 117,429 1
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    CL10B104KB8NNND Tape & Reel 117,429 10,000
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    Avnet Americas CL10B104KB8NNND Tape & Reel 20 Weeks 10,000
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    Avnet Asia CL10B104KB8NNND 16 Weeks 100,000
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    Master Electronics CL10B104KB8NNND
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    Walsin Technology Corporation 1210B104K500CT

    CAP CER 0.1UF 50V X7R 1210
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    DigiKey () 1210B104K500CT Tape & Reel 8,841 3,000
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    1210B104K500CT Digi-Reel 8,841 1
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    Bristol Electronics 1210B104K500CT 15,000 1
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    10B104 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MCR03J102

    Abstract: MCR03*J102 MCH185A150J MCR03*J102 resistor SGA-8343 CL10B104KONC sga8343 samsung bluetooth sige an-061 sga8343z
    Contextual Info: AN RFMD APPLICATION NOTE SGA-8343 GPS Application Circuits RFMD Worldwide Applications Design Application Note - AN-061 Abstract RFMD’s SGA-8343 is a high performance SiGe amplifier designed for operation from DC to 6GHz. This application note illustrates application circuits for GPS Global Positioning System frequency band (1575MHz). The first application circuit is optimized for noise performance; the second one is optimized for input return loss. Introduction The application circuits were


    Original     		SGA-8343 AN-061 1575MHz) MCR03J102 MCR03*J102 MCH185A150J MCR03*J102 resistor CL10B104KONC sga8343 samsung bluetooth sige an-061 sga8343z PDF

    SGA8343Z

    Abstract: MCR03*J102 SGA8343ZSR SGA-8343Z EVB1 1608-FS3N9S lot code RFMD MCH185A150J MCR03J5R1 toko 10k series
    Contextual Info: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


    Original     		SGA8343Z SGA8343ZLow OT-343 SGA8343Z DS100909 SGA8343Z-EVB4 1575MHz MCR03*J102 SGA8343ZSR SGA-8343Z EVB1 1608-FS3N9S lot code RFMD MCH185A150J MCR03J5R1 toko 10k series PDF

    Contextual Info: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


    Original     		SGA8343Z SGA8343ZLow OT-343 SGA8343Z DS110620 SGA8343Z-EVB4 1575MHz PDF

    SGA-8343Z

    Abstract: samsung cl SGA8343Z SOT343 lna MICROWAVE DEVICES GaAs pHEMT LOW SOT-343
    Contextual Info: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


    Original     		SGA8343ZLow SGA8343Z OT-343 SGA8343Z DS110205 SGA8343Z-EVB4 1575MHz SGA-8343Z samsung cl SOT343 lna MICROWAVE DEVICES GaAs pHEMT LOW SOT-343 PDF

    SGA8343z

    Abstract: SGA-8343Z CL10B104K MCR03*J100 MCR03J242 MCR03J620 MCR03J SOT343 lna ROHM TRACE CODE ROHM trace code of lot
    Contextual Info: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


    Original     		SGA8343ZLow SGA8343Z OT-343 SGA8343Z DS110620 SGA8343Z-EVB4 1575MHz SGA-8343Z CL10B104K MCR03*J100 MCR03J242 MCR03J620 MCR03J SOT343 lna ROHM TRACE CODE ROHM trace code of lot PDF

    FEPROM

    Abstract: YL41 10B60 LM 10841 7v71 10B28 U131-1-2
    Contextual Info: PRELIM INARY VF1 FPGA Family B EY O N D P ER F O R M A N C E FEATURES AND BENEFITS ♦ The industry’s first Variable-Grain-Architecture enables high-density, high-performance designs for a wide range of applications — Architecture adapts to logic to enable synthesis-friendly, high-performance designs


    OCR Scan     		leng0B96 IOB97 IOB98 IOB99 10B100 10B101 IOB102 10B103 10B104 10B105 FEPROM YL41 10B60 LM 10841 7v71 10B28 U131-1-2 PDF

    samsung bluetooth

    Abstract: SGA8343Z SGA-8343 MCR03*J102 CL10B104KONC SGA-8343Z 8343
    Contextual Info: SGA-8343 Z SGA-8343(Z) Low Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA-8343 is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to


    Original     		SGA-8343 OT-343 SGA8343ZPCK-EVB2 SGA8343ZPCK-EVB3 SGA8343ZPCK-EVB4 DS100111 samsung bluetooth SGA8343Z MCR03*J102 CL10B104KONC SGA-8343Z 8343 PDF