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    10B104 Search Results

    10B104 Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge NM1210B104M251CEMN
    		Hui Ju (Capacitors) Multilayer ceramic capacitor (MLCC) with X7R dielectric, available in EIA sizes from 0603 to 2225, capacitance range 100pF to 10μF, rated voltage up to 630V, and operating temperature from -55°C to +125°C.Multilayer ceramic capacitor (MLCC) with C0G/X7R dielectric, available in various case sizes from 0603 to 2225, rated voltage up to 6kV, capacitance range from 0.5pF to 10μF, and operating temperature from -55°C to +125°C.Multilayer ceramic capacitor (MLCC) with C0G or X7R dielectric, available in various case sizes from 0603 to 2225, rated voltage up to 6kV, capacitance range from 0.5pF to 10μF, and operating temperature from -55°C to +125°C.Multilayer ceramic capacitor (MLCC) with C0G or X7R dielectric, available in various case sizes from 0603 to 2225, rated voltage up to 6kV, capacitance range from 0.5pF to 10μF, and operating temperature from -55°C to +125°C. Original PDF
    badge NM1210B104K501CEMN
    		Hui Ju (Capacitors) Multilayer ceramic capacitor (MLCC) with X7R dielectric, available in EIA sizes 0603 to 2225, rated voltage 25V to 630V, capacitance range 100pF to 10μF, and capacitance tolerance per specification.Multilayer ceramic capacitors (MLCC) in EIA sizes 0603 to 2225 with voltage ratings from 25V to 6kV, available in C0G and X7R dielectrics, offering high reliability, low loss, and compliance with RoHS and AEC-Q200 standards.Multilayer ceramic capacitors (MLCC) in various series including general-purpose, high-voltage, soft-terminated, and automotive-grade types, with capacitance ranges from 0.5pF to 10μF, voltage ratings up to 6kV, and EIA sizes from 0603 to 2225, featuring X7R or C0G dielectrics and RoHS compliance. Original PDF
    badge NM1210B104K631CEMN
    		Hui Ju (Capacitors) Multilayer ceramic capacitor (MLCC) with X7R dielectric, available in EIA sizes 0603 to 2225, rated voltage 25V to 630V, capacitance range 100pF to 10μF, and capacitance tolerance per specification.Multilayer ceramic capacitors (MLCC) in EIA sizes 0603 to 2225 with voltage ratings from 25V to 6kV, available in C0G and X7R dielectrics, offering high reliability, low loss, and compliance with RoHS and AEC-Q200 standards.Multilayer ceramic capacitors (MLCC) in various series including general-purpose, high-voltage, soft-terminated, and automotive-grade types, with capacitance ranges from 0.5pF to 10μF, voltage ratings up to 6kV, and EIA sizes from 0603 to 2225, featuring X7R or C0G dielectrics and RoHS compliance. Original PDF
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    10B104 Price and Stock

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    Samsung Electro-Mechanics CL10B104MA8NNWC

    CAP CER 0.1UF 25V X7R 0603
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    DigiKey () CL10B104MA8NNWC Cut Tape 129,720 1
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    CL10B104MA8NNWC Digi-Reel 129,720 1
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    CL10B104MA8NNWC Tape & Reel 128,000 4,000
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    Samsung Electro-Mechanics CL10B104KA85PNC

    CAP CER 0.1UF 25V X7R 0603
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () CL10B104KA85PNC Cut Tape 118,265 1
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    CL10B104KA85PNC Digi-Reel 118,265 1
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    CL10B104KA85PNC Tape & Reel 112,000 4,000
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    Samsung Electro-Mechanics CL10B104KB85PND

    CAP CER 0.1UF 50V X7R 0603
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    DigiKey CL10B104KB85PND Tape & Reel 100,000 10,000
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    Newark () CL10B104KB85PND Tape & Reel 40,000 10,000
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    CL10B104KB85PND Cut Tape 15,039 1
    • 1 $0.10
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    Samsung Electro-Mechanics CL10B104KO8WPNC

    CAP CER 0.1UF 16V X7R 0603
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    DigiKey CL10B104KO8WPNC Tape & Reel 68,000 4,000
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    Avnet Asia CL10B104KO8WPNC 16 Weeks, 4 Days 4,000
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    Walsin Technology Corporation 1210B104K500CT

    CAP CER 0.1UF 50V X7R 1210
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    DigiKey () 1210B104K500CT Cut Tape 10,696 1
    • 1 $0.21
    • 10 $0.12
    • 100 $0.08
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    1210B104K500CT Tape & Reel 9,000 3,000
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    Newark 1210B104K500CT Cut Tape 3,395 5
    • 1 $0.34
    • 10 $0.30
    • 100 $0.14
    • 1000 $0.08
    • 10000 $0.08
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    Find more 10B104 price and stock on Findchips.com

    10B104 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MCR03J102

    Abstract: MCR03*J102 MCH185A150J MCR03*J102 resistor SGA-8343 CL10B104KONC sga8343 samsung bluetooth sige an-061 sga8343z
    Contextual Info: AN RFMD APPLICATION NOTE SGA-8343 GPS Application Circuits RFMD Worldwide Applications Design Application Note - AN-061 Abstract RFMD’s SGA-8343 is a high performance SiGe amplifier designed for operation from DC to 6GHz. This application note illustrates application circuits for GPS Global Positioning System frequency band (1575MHz). The first application circuit is optimized for noise performance; the second one is optimized for input return loss. Introduction The application circuits were


    Original     		SGA-8343 AN-061 1575MHz) MCR03J102 MCR03*J102 MCH185A150J MCR03*J102 resistor CL10B104KONC sga8343 samsung bluetooth sige an-061 sga8343z PDF

    SGA8343Z

    Abstract: MCR03*J102 SGA8343ZSR SGA-8343Z EVB1 1608-FS3N9S lot code RFMD MCH185A150J MCR03J5R1 toko 10k series
    Contextual Info: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


    Original     		SGA8343Z SGA8343ZLow OT-343 SGA8343Z DS100909 SGA8343Z-EVB4 1575MHz MCR03*J102 SGA8343ZSR SGA-8343Z EVB1 1608-FS3N9S lot code RFMD MCH185A150J MCR03J5R1 toko 10k series PDF

    Contextual Info: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


    Original     		SGA8343Z SGA8343ZLow OT-343 SGA8343Z DS110620 SGA8343Z-EVB4 1575MHz PDF

    SGA-8343Z

    Abstract: samsung cl SGA8343Z SOT343 lna MICROWAVE DEVICES GaAs pHEMT LOW SOT-343
    Contextual Info: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


    Original     		SGA8343ZLow SGA8343Z OT-343 SGA8343Z DS110205 SGA8343Z-EVB4 1575MHz SGA-8343Z samsung cl SOT343 lna MICROWAVE DEVICES GaAs pHEMT LOW SOT-343 PDF

    SGA8343z

    Abstract: SGA-8343Z CL10B104K MCR03*J100 MCR03J242 MCR03J620 MCR03J SOT343 lna ROHM TRACE CODE ROHM trace code of lot
    Contextual Info: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


    Original     		SGA8343ZLow SGA8343Z OT-343 SGA8343Z DS110620 SGA8343Z-EVB4 1575MHz SGA-8343Z CL10B104K MCR03*J100 MCR03J242 MCR03J620 MCR03J SOT343 lna ROHM TRACE CODE ROHM trace code of lot PDF

    FEPROM

    Abstract: YL41 10B60 LM 10841 7v71 10B28 U131-1-2
    Contextual Info: PRELIM INARY VF1 FPGA Family B EY O N D P ER F O R M A N C E FEATURES AND BENEFITS ♦ The industry’s first Variable-Grain-Architecture enables high-density, high-performance designs for a wide range of applications — Architecture adapts to logic to enable synthesis-friendly, high-performance designs


    OCR Scan     		leng0B96 IOB97 IOB98 IOB99 10B100 10B101 IOB102 10B103 10B104 10B105 FEPROM YL41 10B60 LM 10841 7v71 10B28 U131-1-2 PDF

    samsung bluetooth

    Abstract: SGA8343Z SGA-8343 MCR03*J102 CL10B104KONC SGA-8343Z 8343
    Contextual Info: SGA-8343 Z SGA-8343(Z) Low Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA-8343 is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to


    Original     		SGA-8343 OT-343 SGA8343ZPCK-EVB2 SGA8343ZPCK-EVB3 SGA8343ZPCK-EVB4 DS100111 samsung bluetooth SGA8343Z MCR03*J102 CL10B104KONC SGA-8343Z 8343 PDF