10APR06 Search Results

Contextual Info: BSS138W N-Channel POWER MOSFET 3 DRAIN P b Lead Pb -Free 3 1 2 1 GATE Description: * Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

SUB60N06

Contextual Info: SPICE Device Model SUP/SUB60N06-18 Vishay Siliconix N-Channel Enhancement-Mode Transistor CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUD50N024-06P

Contextual Info: SPICE Device Model SUD50N024-06P Vishay Siliconix N-Channel 20-V D-S 175° MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si9434BDY

Contextual Info: SPICE Device Model Si9434BDY Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUD50N02-06

Contextual Info: SPICE Device Model SUD50N02-06 Vishay Siliconix N-Channel 2.5-V G-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUD50N02-04P

Contextual Info: SPICE Device Model SUD50N02-04P Vishay Siliconix N-Channel 20-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUD50N02-09P

Contextual Info: SPICE Device Model SUD50N02-09P Vishay Siliconix N-Channel 20-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUM40N15-38

Abstract: 72382
Contextual Info: SPICE Device Model SUM40N15-38 Vishay Siliconix N-Channel 150-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUD50N024-09P

Contextual Info: SPICE Device Model SUD50N024-09P Vishay Siliconix N-Channel 20-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUM27N20-78

Contextual Info: SPICE Device Model SUM27N20-78 Vishay Siliconix N-Channel 200-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

71713

Abstract: SUD40N08-16
Contextual Info: SPICE Device Model SUD40N08-16 Vishay Siliconix N-Channel 80-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: PhMKP./.-DW Vishay ESTA ESTAprop/ESTAdry Power Factor Correction Capacitors Low Voltage DW-TYPE FILTER CAPACITORS/IMPREGNATED OR DRY/RESIN-FILLED DESIGN APPLICATION ESTAprop DW-type capacitors in rectangular steel casing have been designed for high current filter circuit applications

transistor a 1837

Abstract: SUD45N05-20L
Contextual Info: SPICE Device Model SUD45N05-20L Vishay Siliconix N-Channel Enhancement-Mode Transistor, Logic Level CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

B 1184

Abstract: 55NS100
Contextual Info: SPICE Device Model SUP/SUB85N02-06 Vishay Siliconix N-Channel 20-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

QFN 7X7

Abstract: BPF filter rf GHz R1005 transistor 2.4 ghz bandpass filter R1005 XR1005-QD XR1005-QD-0N00 XR1005-QD-0N0T XR1005-QD-EV1 receiver 20 GHz block Diagram
Contextual Info: 19.0-26.0 GHz GaAs Receiver QFN, 7x7 mm R1005-QD April 2006 - Rev 10-Apr-06 Features Sub-harmonic Receiver Integrated LNA, LO Buffer, Image Reject Mixer 7x7 mm, QFN +2.0 dBm LO Drive Level 3.0 dB Noise Figure 20.0 dB Image Rejection 100% On-Wafer RF, DC and Noise Figure Testing

2Xf transistor

Abstract: 84-1LMI X1000 XR1002 XX1000 balun GHz broadband TRANSISTOR 2xf
Contextual Info: 7.5-25.0/15.0-50.0 GHz GaAs MMIC Active Doubler X1000 April 2006 - Rev 10-Apr-06 Features Excellent Broadband Mixer Driver Single Ended Fed Doubler with Distributed Buffer Amplifier Excellent LO Driver for Mimix Receivers +15 dBm Output Drive 100% On-Wafer RF, DC and Output Power Testing

104 DISC capacitor

Abstract: 101 Ceramic Disc Capacitors 103 Ceramic Disc Capacitors 104 Ceramic Disc Capacitors marking code capacitors 102 Ceramic Disc Capacitors capacitors 104 ceramic disc 104 capacitors F472K75Y5RN83J0 f151
Contextual Info: HV LDF 0.2 % Vishay BCcomponents Ceramic Disc Capacitors Class 2, low loss 500 V, 1 kV, 2 kV and 3 kV FEATURES • High reliability • Low losses D e3 • High capacitance in small size • Kinked leads RoHS • Lead Pb -free available tangent line COMPLIANT

transistor R1005

Abstract: R1005 transistor R1005 DM6030HK TS3332LD XR1005
Contextual Info: 19.0-26.0 GHz GaAs MMIC Receiver R1005 April 2006 - Rev 10-Apr-06 Features Sub-harmonic Receiver Integrated LNA, LO Buffer, Image Reject Mixer +2.0 dBm LO Drive Level 2.3 dB Noise Figure 20.0 dB Image Rejection 100% On-Wafer RF, DC and Noise Figure Testing

74181

Abstract: Si5486DU
Contextual Info: SPICE Device Model Si5486DU Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si6923DQ

Contextual Info: SPICE Device Model Si6923DQ Vishay Siliconix P-Channel Rated MOSFET + Schottky Diode CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUD50N024-09P

Contextual Info: SPICE Device Model SUD50N024-09P Vishay Siliconix N-Channel 20-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUD40N06-25L

Contextual Info: SPICE Device Model SUD40N06-25L Vishay Siliconix N-Channel Enhancement-Mode MOSFET, Logic Level CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUD40N06-25L

Contextual Info: SPICE Device Model SUD40N06-25L Vishay Siliconix N-Channel Enhancement-Mode MOSFET, Logic Level CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUM18N25-165

Contextual Info: SPICE Device Model SUM18N25-165 Vishay Siliconix N-Channel 250-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range