10A11 Search Results

dp 12A

Abstract: 241-7-36A47 DP 6 W E179499 241-8-10A51 241-3-10A1 241-3-12A2 241-4-10A11 241-5-10A21 241-3-16A3
Contextual Info: Laminated Transformers Low Frequency, Open-Style Laminated, Chassis-Tran Series Part Number Secondary RMS Rating Single 115V Dual 115/230V 241-3-10A1 not available 10V C.T. @ 0.25A 241-4-10A11 DP 241-4-10A11 10V C.T. @ 0.6A n UL, 506, File E73539 241-5-10A21 DP 241-5-10A21 10V C.T. @ 1.2A

MT-8-15A06

Abstract: DP 6 W DMT-8-12A05 Power transformers
Contextual Info: Series 241 and DP 241 Power Transformers CHASSIS-TRAN Power Transformers Single 115V 241-3-10A1 241-4-10A11 241-5-10A21 241-6-10A31 241-7-10A41 241-8-10A51 241-3-12A2 241-4-12A12 241-5-12A22 241-6-12A32 241-7-12A42 241-8-12A52 241-3-16A3 241-4-16A13 241-5-16A23

D425G

Abstract: ACT21 SN74BCT2166
Contextual Info: SN74BCT2163, SN74BCT2164, SN74BCT2166 16K x 5 CACHE ADDRESS COMPARATORS/TAG RAMs SCHS012-D3513, JUNE 1990-REVISED NOVEMBER 1991 SN74BCT2163, SN74BCT2164 Fast Address to MATCH Delay. 12 ns Max FM PACKAGE CTOP VIEW ’BCT2163 Has Totem-Pole Match Output Q\*~

27LV010A

Contextual Info: TMS27LV010A1 048 576-BIT UV ERASABLE LOW VOLTAGE PROGRAMMABLE ROM TMS27LV010A1 048 576-BIT LOW VOLTAGE ONE-TIME PROGRAMMABLE ROM SMLS113-DECEMBER 1992 x 8 J AND N PACKAGESt TOP VIEW Single 3.3-V Power Supply Operationally Compatible With Existing 1-Megabit EPROMs

Contextual Info: SN74ACT2158, SN74ACT2159 8K x 9 CACHE ADDRESS COMPARATORS/DATA RAMs D 3 2 8 1 , M A Y 1 9 9 0 R E V IS E D J U N E 1990 Fast Address to MATCH Delay 22 ns Max FN PACKAGE TOP VIEW 8K x 10 Internal Static RAM ISCI 5 Ä • Word Reset Function for Single Entry

Nippon capacitors

Contextual Info: HB56U464EJ Series 4,194,304-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-716A Z Rev. 1.0 Jan. 27, 1997 Description The HB56U464EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The

mx-k30

Abstract: DAC8143
Contextual Info: ANALOG DEVICES 12-Bt Sferial Daisy-Chain MSQAGbmsrter 1X2143 FEATURES Fast, Flexible, Microprocessor Interfacing in Serially Controlled Systems Buffered Digital Output-Pin for Daisy-Chaining M ultiple DACs Minim izes Address-Decoding in M ultiple DAC Systems— Three Wire Interface for Any Number of DACs

Contextual Info: ESTABLISHED RELIABILITY INDUCTORS - THRU HOLE ER10M Molded Shielded RF Inductors - Military Approved MIL-PRF-39010/08/09/10 PART MIL PART L µH Q TEST NUMBER NUMBER MIN FREQ. MHz SRF MHz MIN. DCR OHMS MAX. CURRENT INDUCTANCE RATING TOLERANCE mA DC 2 SIDED LASER MARKING

t4sb

Contextual Info: liliali M a rc h 1 9 9 4 HM 65790 DATA SHEET 16 K X 4 HIGH SPEED CMOS SRAM SEPARATE I/O FEATURES 300 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN 2000 V ELECTROSTATIC DISCHARGE SINGLE 5 VOLT SUPPLY

10a201

Contextual Info: ESTABLISHED RELIABILITY INDUCTORS - THRU HOLE ER10M TRADITIONAL Pb Molded Unshielded RF Inductors - Military Approved MIL-PRF-39010/08/09/10 Level R Qualified PART MIL PART L µH Q TEST SRF NUMBER NUMBER MIN FREQ. MHz MHz MIN. ER10M100*^ ER10M110J^ ER10M120*^

6CS3

Abstract: Infrared Receiver sensor HD6432631 HD6432632 HD6432633 HD64F2633 HD64F2633R 433 transmitter, pcb layout master guide st semiconductor ERN 1387
Contextual Info: To all our customers Information regarding change of names mentioned within this document, to Renesas Technology Corp. On April 1st 2003 the following semiconductor operations were transferred to Renesas Technology Corporation: operations covering microcomputer, logic,

16b3

Abstract: how getting lower voltage from 7805C regulator variable voltage with 7805C design a circuit for 3V from 7805C regulator MAX3221-MAX3243 watchman robot alters max servo board seiko scr FIR 3d Servo motor based mobile robot control 1C00
Contextual Info: IsoPod Users Manual 1. Warranty New Micros, Inc. warrants its products against defects in materials and workmanship for a period of 90 days. If you discover a defect, New Micros, Inc. will, at its option, repair, replace, or refund the purchase price. Simply call our sales department for an RMA

ZXMN10A11G

Abstract: ZXMN10A11GTA ZXMN10A11GTC
Contextual Info: 10A11G 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 100V; RDS(ON)= 0.35 ID= 2.4A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This

M37204M8

Abstract: EPROM 2532A M37204MC-XXXSP M37204MC M37204EC-XXXSP M37204ECSP 10B716 m37204mcxxxsp M37204M8XXXSP M37204
Contextual Info: MITSUBISHI MICROCOMPUTERS M37204MC-XXXSP M37204EC-XXXSP, M37204ECSP SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER for VOLTAGE SYNTHESIZER _ and ON-SCREEN DISPLAY CONTROLLER DESCRIPTION PIN CONFIÖURATION TOP VIEW The M37204MC-XXXSP is a single-chip microcomputer designed with

CCA612

Abstract: 74BCT2163
Contextual Info: SN74BCT2163, SN74BCT2164, SN74BCT2166 16K x 5 CACHE ADDRESS COMPARATORS/TAG RAMs D 3513, JU N E 1990 SN74BCT2163, SN74BCT2164 FM PACKAGE TOP VIEW Fast Address to MATCH Delay 12-ns Max S t I1^ , z C/3 o *it o lS it r o l i r Q Q I II II II II II II—I 'BCT2163 has Totem-Pole Match Output

Contextual Info: ANALOG DEVICES 1 -/2-/4-Channel Digital Potentiometers AD8400/AD8402/AD8403 FEATURES 256 Position Replaces 1, 2 or 4 Potentiometers 1 k il, 10 k il, 50 k il, 100 k il Power Shut Down—Less than 5 ftA 3-Wire SPI Compatible Serial Data Input 10 MHz Update Data Loading Rate

Contextual Info: QPL RF INDUCTORS - THRU HOLE ER10M TRADITIONAL Established Reliability Wirewound, Molded, Level R Qualified, MIL-PRF-39010 Pb M39010/08 Phenolic Core /09 Powdered Iron Core /10 Ferrite Core PART NUMBER ER10M100*^ ER10M110J^ ER10M120*^ ER10M130J^ ER10M150*^

Contextual Info: ESTABLISHED RELIABILITY INDUCTORS - THRU HOLE ER10M Molded Shielded RF Inductors - Military Approved MIL-PRF-39010/08/09/10 PART MIL PART L µH Q TEST NUMBER NUMBER MIN FREQ. MHz SRF MHz MIN. DCR OHMS MAX. CURRENT INDUCTANCE RATING TOLERANCE mA DC 2 SIDED LASER MARKING

HD64F2633F25

Abstract: ERN 1387 C16C Hitachi DSA00280
Contextual Info: H8S/2633 Series H8S/2633 HD6432633 H8S/2632 HD6432632 H8S/2631 HD6432631 H8S/2633 F-ZTAT HD64F2633 H8S/2633R F-ZTAT™ HD64F2633R H8S/2695 HD6432695 Hardware Manual ADE-602-165C Rev. 4.0 8/29/02 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s

s6T making

Abstract: HM65768
Contextual Info: Tem ic HM 65768B MATRA MHS 4 K X 4 High Speed CMOS SRAM Introduction The HM 65768B is a high speed CMOS static RAM organized as 4096 x 4 bits. It is manufactured using MHS’s high performance CMOS technology. Each memory expansion is provided by an active low chip

10A11

Contextual Info: 10A11G 110V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 100V; RDS(ON)= 0.35 ID= 2.4A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This

Contextual Info: ANALOG DEVICES 2-/4-Channel Digital Potentiometers AD8402/AD8403 FEATURES 256 Position Replaces 2 or 4 Potentiometers 10 k il, 50 k il, 100 k ii Power Shut Down—Less than 5 n-A 3-Wire SPI Compatible Serial Data Input 10 MHz Update Data Loading Rate +2.7 V to +5.5 V Single-Supply Operation

Contextual Info: ESTABLISHED RELIABILITY INDUCTORS - THRU HOLE ER10M Molded Shielded RF Inductors - Military Approved MIL-PRF-39010/08/09/10 Level R Qualified PART MIL PART L µH Q TEST NUMBER NUMBER MIN FREQ. MHz SRF MHz MIN. DCR OHMS MAX. CURRENT INDUCTANCE RATING TOLERANCE

Contextual Info: Tem ic HM 65688A MATRA MHS 16 K x 4 Ultimate CMOS SRAM Introduction The HM 65688A is a very low power CMOS static RAM organised as 16384 x 4 bits. It is manufactured using the MHS high performance CMOS technology named super CMOS. current typical value = 0.1 (lA with a fast access time at