10A 400V PNP Search Results

Triac to220

Abstract: Thyristor triac 400v 16a triac 600v 25a TRIAC 25a 600v Triac 3a 600v triac 400v 25a triac 10a 400v thyristor 3a 600v Thyristor to220
Contextual Info: Index by Part Number Part number ET013 ET015 ET020 SLA0201 STA203A STA221A TF321M TF321M-A TF321S TF341M TF341M-A TF341S TF361M TF361M-A TF361S TF521M TF521S TF541M TF541S TF541S-A TF561M TF561S TF561S-A TF821M TF821S TF841M TF841S TF861M TF861S TFC561D TFD312S-C

pnp 400v 10a

Contextual Info: Search Results Part number search for devices beginning "2N697." Top of Page Semelab Home If you are unable to find a suitable part, please contact us. [26-Mar-2002 12:28:58 PM] Datasheets are downloaded

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

GMPCR06

Contextual Info: ISSUED DATE :2005/12/21 REVISED DATE :2006/03/29B GMPCR06 S E N S I T I V E G AT E S I L I C O N C O N T R O L L E D R E C T I F I E R S REVERSE BLOCKING THYRISTORS 0.8A, 400V Description The GMPCR06 PNPN device is designed for high volume, line-powered applications such as relay and lamp

CR100-6

Abstract: GMCR100
Contextual Info: ISSUED DATE :2005/09/28 REVISED DATE :2006/03/29B GM CR100-6 S E N S I T I V E G AT E S I L I C O N C O N T R O L L E D R E C T I F I E R S REVERSE BLOCKING THYRISTORS 0.8A, 400V Description The GMCR100-6 PNPN device is designed for high volume, line-powered applications such as relay and lamp

IRF9210

Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
Contextual Info: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF

10K variable resistor scr and triac

Abstract: triac moc 3010 Transistor GK 46 180r relay 220vac LED driver 6456-K AK 3010 SCR gate driver circuit RC snubber scr design RS Components 74 series TTL
Contextual Info: Issued November 1993 F16263 Opto-coupled SCR and triacs RS stock numbers 577-853, 577-869, 585-315 585-286, 308-196, 301-628 Three opto-coupled SCR and three opto-coupled triacs available in 6-pin dual-in-line plastic packages. These devices consist of gallium arsenide infra-red

42ap

Abstract: BUW42A BUW42 BUW42P ISOWATT218 BUW42AP TO3 package RthJC BUW41A BUW42PFI 42PFI
Contextual Info: 735^537 oosaagq a • SGS-THOMSON S G S-THOMSON B U W 42/42P/42P F I B U W 4 2A /4 2A P /42 A P F I 3DE 3> HIGH VOLTAGË POWER SWITCH DESCRIPTION The BUW42/A, BUW42P/42AP and BUW42PFI/ APFI are silicon multiepitaxial mesa PNP transistors mounted respectively in TO-3 metal case, TO-218

triacs bt 804 600v

Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
Contextual Info: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­

TF561S

Abstract: Thyristor to220 600v 12A TO220F TF541M TF321S tf541m 22 l
Contextual Info: Selection Guide Thyristors Type Rated Current 3A General purpose 5A 8A High sensitivity Array 3A 5A 5A x 4 circuits 200V TF321M TF321S TF521M TF521S TF821M TF821S TF321M-A — — Reverse Voltage 400V 600V TF341M TF361M TF341S TF361S TF541M TF561M ✽ TF541S

4W0E

Abstract: SMEW H11C4 H11C5-H11C6 VP243 GE SCR 1000 H11C5 H11C6 400v transistor the light activated scr
Contextual Info: G E SOLID STATE 01 DE J 3ñ7SDñl DOlTOfl b | Optoelectronic Specifications " T -w -s 7 Photon Coupled Isolator H11C4 Ga As Infrared Emitting Diode & Light Activated SCR The GE Solid State H 11C4, H 11C5 and H11C6 are gallium arsenide, infrared emitting diodes coupled with light activated silicon con- j

42ap

Abstract: TO3 HEATSINK
Contextual Info: rZ Z S G S -T H O M S O N IM g ^ ( » iO T ( ô « S B U W 42/42P /42P F i B U W 42A /42A P /42A P F I HIGH VOLTAGE POWER SWITCH D E S C R IP T IO N The BUW42/A, BUW42P/42AP and BUW42PFI/ APFI are silicon multiepitaxial mesa PNP transistors mounted respectively in TO-3 metal case, TO-218

NTE5635

Abstract: NTE5633 NTE5637 triac 600V 100A NTE5632 NTE5631 NTE5634 NTE5636
Contextual Info: NTE5631 thru NTE5637 TRIAC – 10 Amp Description: The NTE5631 through NTE5637 series of TRIACs are high performance glass passivated PNPN devices in a TO220 type package designed for general purpose applications where moderate gate sensitivity is required.

415v two phase welding machine str CIRCUIT DIAGRAM

Abstract: shell tellus c10 oil toroid international ltd P/N TT63-630 shell tellus c10 oil data sheet 33-20l capacitor
Contextual Info: ELMARK Has been a registered trademark for Europe since the year of 2000 and is part of the international company ELMARK HOLDING SC. Our company is licensed for the manufacture of the full range of professional low-voltage electrical equipment. The Headquarters of ELMARK HOLDING AD are situated in Varna, Bulgaria. There is our logistics center which

JANS2N2484

Abstract: JANS2N3439UA JANS2N3637 transistors SMD npn JANS2N5339U3 JANS2N7373
Contextual Info: JANS QUALIFIED BI-POLAR TRANSISTORS* Part # JANS QUALIFIED BI-POLAR TRANSISTORS* Type Voltage hFE @ Ic Rated Ic Package JANS QUALIFIED BI-POLAR TRANSISTORS* JANS QUALIFIED BI-POLAR TRANSISTORS* Part # Slash Sheet Type Voltage hFE @ Ic Rated Ic Package JANS2N930

13001 TRANSISTOR

Abstract: CNY30 CNY30-CNY34 GE SCR 1000 1000C AN006 CNY34 INS080I4
Contextual Info: G E SOLI» STATE 01 Optoelectronic Specifications DE|3fl750fll OanflBG 0 | T ^ h 3-7 Photon Coupled Isolator CNY30-CNY34 Ga As Infrared Emitting Diode & light Activated SCR The GE Solid State CNY30 and CNY34 consist of a gallium arsenide, infrared emitting diode coupled with a light activated silicon con­

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

Contextual Info: European “Pro Electron" Registered T y p e s _ CNY30, CNY34 Optoisofator Ga As Infrared Emitting Diode and Light Activated SCR SVMBOL C H K INFRARED EM ITTIN G DIODE Power Dissipation -55°C to 50°C *100 Forward Current (Continuous) 60 (-55°C to 50°C)

TAG 8907

Abstract: TAG 8912 12-0-12 220V ac transformer ALTECH 2094.0 Miniature fuses color coding gr1001 Q24e AQ41 LEDA 1006 Q44E
Contextual Info: FEED-THROUGH ➤ 44mm 1.73 in. 35 or 32mm DIN Rail ➤ ➤ 45mm (1.77 in.) ➤ 27mm (1.07 in.) ➤ ➤ TS35x7.5 39mm (1.54 in.) TS32x15 43mm (1.70 in.) TS35x7.5 44mm (1.73 in.) TS32x15 48mm (1.89 in.) ➤ ➤ ➤ SRK2.5 RK2.5 RK1.5-4 Save installation time with our

BT1603

Abstract: si2112 ae rw solid state relay 220V st1602 T100R T100R-C 4N4U
Contextual Info: [* q PHOTO SCR OPTOCOUPLERS m u in m m 4N394N40 ib fi The 4N39 and 4N40 have a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual in-line package. • ■ • ■ ■ 0.41 DIMENSIONS IN mm

C1959

Abstract: C1957 transistor c1959 transistor IN5060 diode C1957 St1602 C1958 c1959 Y transistor transistor c1959 in5060
Contextual Info: [*u PHOTO SCR OPTOCOUPLERS OPTOELECTRONICS 4N394N40 DESCRIPTION The 4N39 and 4N40 have a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual in-line package. FEATURES & APPLICATIONS High efficiency, low degradation, liquid epitaxial LED

pnp 400v 10a

Abstract: MPSA194 MPSA19 equivalent t92 MPSA194L-T92-B
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSA194 PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR „ DESCRIPTION The UTC MPSA194 is designed for high voltage low power switching applications especially for use in telephone and telecommunication circuits. „ FEATURES

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSA194 PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR  1 DESCRIPTION TO-92 The UTC MPSA194 is designed for high voltage low power switching applications especially for use in telephone and telecommunication circuits.

sci46d

Contextual Info: [s O PHOTO SCR OPTOCOUPLERS OPTOELECTRONICS 4N394N40 DESCRIPTION The 4N39 and 4N40 have a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual in-line package. FEATURES & APPLICATIONS High efficiency, low degradation, liquid epitaxial LED