10A, 100V FAST RECOVERY DIODE Search Results

Contextual Info: MITSUBISHI Neh POWER MOSFET F S 1 O A S J -2 HIGH-SPEED SWITCHING USE FS1 OASJ-2 ' 4V DRIVE ' V d s s . ' rDS ON (MAX) . ' Id . ' Integrated Fast Recovery Diode (TYP.) . 100V . 0.190 .10A 95ns APPLICATION

byv32

Abstract: 10A, 100v fast recovery diode power Diode 200V 10A anode common fast recovery diode dual BYV32-200TMF 2A Fast Recovery Diodes DUAL DIODES COMMON ANODE TO220 to-276ab common anode fast to220 fast rectifier common anode
Contextual Info: BYV32–50M0 BYV32–100M BYV32–150M BYV32–200M MECHANICAL DATA Dimensions in mm 4.6 0.8 0 .7 6 0 .0 3 0 m in . 1 0 .6 1 3 .5 16.5 3.6 Dia. 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 1 1 3 .7 0 3 .6 0 (0 .1 4 2 ) M a x . 3 1 0 .6 9 (0 .4 2 1 )

HUR1630CT

Contextual Info: HUR1630CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-220AB A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 300 HUR1630CT Symbol VRRM V 300 Test Conditions IFRMS IFAVM TC=130oC; rectangular, d=0.5 IFSM

HUR830

Contextual Info: HUR830 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-220AC A C A C C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 300 HUR830 Symbol VRRM V 300 Test Conditions Dim. A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580

10A, 100v fast recovery diode

Contextual Info: -Jülitron ra@ y Tr ©¿aim©« Devices. Inc. MEDIUM VOLTAGE, FAST RECOVERY CHIP NUMBER PN EPITAXIAL FAST RECOVERY PLANAR POWER DIODE CONTACT METALLIZATION Anode: > 50,000 Â Aluminum Cathode: Gold Polished silicon or “Chrome Nickel Silver" also available

75 ns 75

Abstract: SOLITRON DEVICES
Contextual Info: 8368602 SOLITRON DEVICES INC _ 9 5D ÌS Ä¥Ä L@(i 02917 D E|fl3bflt:D 2 D 7"- □ □ □ 2 CU 7 àJ - / ? □ | MEDIUM VOLTAGE, FAST RECOVERY Devices, Inc CHIP NUMBER PN EPITAXIAL FAST RECOVERY PLANAR POWER DIODE CONTACT METALLIZATION Anode: > 50,000  Aluminum

600v 10A ultra fast recovery diode

Abstract: HUR20100CT fast recovery diode 600v 12A HUR20120CT fast recovery diode 600v 5A
Contextual Info: HUR20100CT, HUR20120CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-220AB A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 HUR20100CT HUR20120CT Symbol VRRM V 1000 1200 Test Conditions IFRMS IFAVM

HUR1060

Abstract: 100v 20a fast recovery power diode 30v 10a smps
Contextual Info: HUR1060 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-220AC A C A C C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 600 HUR1060 Symbol VRRM V 600 Test Conditions Dim. A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580

600v 10A ultra fast recovery diode

Abstract: HUR10100 HUR10120
Contextual Info: HUR10100, HUR10120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-220AC A C A C C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 HUR10100 HUR10120 Symbol VRRM V 1000 1200 Test Conditions Dim. A B C D E F G

HUR830

Abstract: 10A, 100v fast recovery diode
Contextual Info: HUR830 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-220AC A C A C C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 300 HUR830 Symbol VRRM V 300 Test Conditions Dim. A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580

HUR2060CT

Contextual Info: HUR2060CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-220AB A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 600 HUR2060CT Symbol VRRM V 600 Test Conditions IFRMS IFAVM TC=135oC; rectangular, d=0.5 IFSM

600v 10A ultra fast recovery diode

Abstract: fast recovery diode 600v 12A HUR20100CT 10A, 100v fast recovery diode 10a ultra fast diode HUR20120CT fast recovery diode 600v 5A ultra fast recovery time diode
Contextual Info: HUR20100CT, HUR20120CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-220AB A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 HUR20100CT HUR20120CT Symbol VRRM V 1000 1200 Test Conditions IFRMS IFAVM

sonic cleaner

Abstract: HUR2060CT
Contextual Info: HUR2060CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-220AB A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 600 HUR2060CT Symbol VRRM V 600 Test Conditions IFRMS IFAVM TC=135oC; rectangular, d=0.5 IFSM

HUR1630CT

Contextual Info: HUR1630CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-220AB A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 300 HUR1630CT Symbol VRRM V 300 Test Conditions IFRMS IFAVM TC=130oC; rectangular, d=0.5 IFSM

HUR830S

Abstract: 10a ultra fast diode 5a ultra fast diode
Contextual Info: HUR830S High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-263 D2PAK C(TAB) A C A NC A=Anode, NC= No connection, TAB=Cathode VRSM V 300 HUR830S Symbol VRRM V 300 Test Conditions 1. 2. 3. 4. Gate Collector Emitter Collector

600v 10A ultra fast recovery diode

Abstract: sonic cleaner HUR10100 HUR10120 fast recovery diode 600v 5A 600v 10A ultra fast recovery diode to-220ac ultra fast recovery time diode
Contextual Info: HUR10100, HUR10120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-220AC A C A C C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 HUR10100 HUR10120 Symbol VRRM V 1000 1200 Test Conditions Dim. A B C D E F G

Contextual Info: AOTF10N50FD 500V, 10A N-Channel MOSFET with Fast Recovery Diode General Description Product Summary The AOTF10N50FD has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS on , Ciss

10a ultra fast diode

Abstract: HUR830S
Contextual Info: HUR830S High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-263 D2PAK C(TAB) A C A NC A=Anode, NC= No connection, TAB=Cathode VRSM V 300 HUR830S Symbol VRRM V 300 Test Conditions 1. 2. 3. 4. Gate Collector Emitter Collector

Contextual Info: AOTF10N50FD 500V, 10A N-Channel MOSFET with Fast Recovery Diode General Description Product Summary The AOTF10N50FD has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS on , Ciss

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

jrc 5532

Abstract: jrc 5534 as4558 audio amplifier 4558 12v electronic transformer RECTIFIER 5532 JRC 4558 JRC JRC4558 bridge rectifier 12V 1A jrc 4558
Contextual Info: NIEC’s SBD and FRED for Audio Nihon Inter Electronics Corporation NIEC is a major manufacturer of Schottky Barrier Diode (SBD) and Fast Recovery Epitaxial Diode (FRED). Thanks to low dissipation, fast switching, and low noise characteristics, these fast switching diodes are widely used in Switching Mode Power Supply (SMPS) all over the

k07n120

Abstract: Q67040-S4280 PG-TO-247-3 SKW07N120
Contextual Info: SKW07N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • Lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:

RF2001T2D

Contextual Info: RF2001T2D Data Sheet Fast recovery diode RF2001T2D Applications General rectification Dimensions Unit : mm  Structure 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 5.0±0.2 ① 13.5MIN 1.2 Construction Silicon epitaxial planar

Contextual Info: Data Sheet Fast recovery diode RF2001T2D Applications General rectification Dimensions Unit : mm  Structure 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 Features 1) Cathode common type. (TO-220) 2) Ultra Low V F 3) Very fast recovery