10MAX Search Results

SMD-16A

Abstract: SDC09 SMD16A TRANSISTOR SMD 1a 9 power transistor array
Contextual Info: Surface-mount Power Transistor Array SDC09 ICBO IEBO VCEO hFE VCE sat VFEC Es/b Test Conditions VCB = 60V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA IFEC = 6A L = 10mH, single pulse Ratings 10max 10max 60 to 70 400 to 1500 0.15max 1.5max 80min

TOKO CERAMIC FILTER 450

Abstract: PCFMJ-001 PCFML-023 450-470KHZ TOKO CERAMIC FILTER 450 khz
Contextual Info: TYPE AM Ceramic Filters with Matching Coil CFML CFMJ マッチングコイル付AM セラミックフィルタ TYPE CFML, CFMJ CERASIZER /Triple-tuned CFML (7PS+CFMR) 2.5 2.5 2.9 4.5 5.8 13Max. 0.6 0.7 7.5Max. 0.2 10Max. CFML 4.5 CFML (7PS+CFMR) 2.5 2.5

FM20

Abstract: FN812
Contextual Info: Power Transistor FN812 ICBO IEBO VCEO hFE VCE sat (Ta=25ºC) Unit µA µA V Ratings 10max 10max 100min 70min 0.3max External Dimensions FM20 (full-mold) 10.0 V a b Typical Switching Characteristics VCC (V) 12 RL (Ω) 4 IC (A) 3 VBB1 (V) 10 VBB2 (V) –5

PAV25

Abstract: Pushbutton Switches
Contextual Info: Pushbutton Switches Anti-Vandal Pushbutton Switch - Mounting Hole Ø25mm PAV25 Series 10max . 9.2 6 2 L 19.8 L=38.4 Momentary L=41.4 (Latching) Top View Bottom View PAV25D.1. Dot illuminated; 2NO2NC 1 5.5 10max. 6 2 19.8 L L=38.4 (Momentary) L=41.4 (Latching)

mc136 toko

Abstract: E542DNAS-100077 MC136 toko coils color code 100072
Contextual Info: Molded Coils TYPE モールドコイル MC136 MC136 Close Wound Frequency Range: 30MHz~250MHz 1 Inductance Range: 0.03~0.45µH Temperature Coefficient: 150ppm/°C, max. Features 10Max. 3.3 φ0.5 4.5 0.7 Max. 7.5Max. 7.5Max. 1x1.9 (Unit: mm) 特 長

2SC4467

Abstract: transistor 2SC4467 2SA1694
Contextual Info: 2SC4467 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1694 2SC4467 Unit ICBO VCB=160V 10max µA VCEO 120 V IEBO VEB=6V 10max µA VEBO 6 V V(BR)CEO IC 8 A hFE 120min IC=50mA V VCE=4V, IC=3A 50min∗ 19.9±0.3 Symbol A VCE(sat) IC=3A, IB=0.3A

2SD2141

Abstract: 2SD2141 equivalent FM20 DMS-10
Contextual Info: Equivalent circuit 2SD2141 Silicon NPN Triple Diffused Planar Transistor V ICBO VCEO 380±50 V IEBO VEBO 6 V V BR CEO 6(Pulse10) A hFE IC Symbol Conditions VCB=330V 10max µA VEB=6V 20max mA IC=25mA 330 to 430 V 1500min VCE=2V, IC=3A 1 A VCE(sat) IC=4A, IB=20mA

2SC5101

Abstract: 2SA1909 DSA0016511
Contextual Info: 2SC5101 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1909 Application : Audio and General Purpose Ratings Unit ICBO VCB=200V 10max µA VCEO 140 V IEBO VEB=6V 10max µA V 140min IC=50mA VCE=4V, IC=3A 50min∗ IB 4 A VCE(sat) IC=5A, IB=0.5A

2SC4467

Abstract: 2SA1694 2sa1694 2sc4467 DSA0016509
Contextual Info: 2SC4467 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1694 Ratings Unit ICBO VCB=160V 10max µA VCEO 120 V IEBO VEB=6V 10max µA VEBO 6 V V(BR)CEO IC 8 A hFE 120min IC=50mA V VCE=4V, IC=3A 50min∗ 19.9±0.3 Symbol A VCE(sat) IC=3A, IB=0.3A

2sc4024

Abstract: VEBO-15V M.P transistor FM20
Contextual Info: 2SC4024 High hFE LOW VCE sat Silicon NPN Epitaxial Planar Transistor ICBO VCEO 50 V VEBO 15 V IC 10 A hFE IB 3 A VCE(sat) PC 35(Tc=25°C) W fT Tj 150 °C COB VCB=10V, f=1MHz –55 to +150 °C 10.1±0.2 VCB=100V 10max µA IEBO VEB=15V 10max µA V(BR)CEO IC=25mA

2SD2014

Abstract: 2SB1257 FM20
Contextual Info: 2SD2014 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1257 ICBO VCEO 80 V IEBO VEBO 6 V V(BR)CEO IC 4 A hFE VCE=2V, IC=3A 2000min Conditions Unit VCB=120V 10max µA VEB=6V 10max mA IC=10mA 80min V 10.1±0.2 IB 0.5 A VCE(sat) IC=3A, IB=3mA

2sd2083

Abstract: transistor 2sd2083 2sb1383
Contextual Info: 2SD2083 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1383 IEBO VEB=6V 10max mA 6 V V(BR)CEO 25(Pulse40) A hFE IC=25mA 120min VCE=4V, IC=12A 2000min V 2 A VCE(sat) IC=12A, IB=24mA 1.8max PC 120(Tc=25°C) W VBE(sat) IC=12A, IB=24mA 2.5max

2SD2141 equivalent

Abstract: 2SD2141 FM20 DMS-10
Contextual Info: Equivalent circuit 2SD2141 Silicon NPN Triple Diffused Planar Transistor ICBO VCEO 380±50 V IEBO VEBO 6 V V BR CEO 6(Pulse10) A hFE IC Symbol Conditions VCB=330V 10max µA VEB=6V 20max mA IC=25mA 330 to 430 V 1500min VCE=2V, IC=3A 1 A VCE(sat) IC=4A, IB=20mA

FS1AS-16A

Contextual Info: MITSUBISHI Nch POWER MOSFET FS1AS-16A HIGH-SPEED SWITCHING USE FS1AS-16A OUTLINE DRAWING Dimensions in mm 2.3 2.3 10MAX. 2.3MIN. 0.9MAX. 1.0MAX. 5.5 ± 0.2 4 1.0 0.5 ± 0.1 1.5 ± 0.2 6.5 5.0 ± 0.2 0.5 ± 0.2 2.3 0.8 1 2 3 wr q w e r q ¡VDSS . 800V

Contextual Info: MITSUBISHI Nch POWER MOSFET FS2ASJ-3 HIGH-SPEED SWITCHING USE FS2ASJ-3 OUTLINE DRAWING Dimensions in mm 0.5 ± 0.1 2.3 2.3 2.3MIN. 1.0 A 0.5 ± 0.2 0.8 2.3 0.9MAX. 1.0MAX. 5.5 ± 0.2 r 10MAX. 1.5 ± 0.2 6.5 5.0 ± 0.2 q w e wr ¡4V DRIVE ¡VDSS . 150V

FS1AS-18A

Contextual Info: MITSUBISHI Nch POWER MOSFET FS1AS-18A HIGH-SPEED SWITCHING USE FS1AS-18A OUTLINE DRAWING Dimensions in mm 2.3 2.3 10MAX. 2.3MIN. 0.9MAX. 1.0MAX. 5.5 ± 0.2 4 1.0 0.5 ± 0.1 1.5 ± 0.2 6.5 5.0 ± 0.2 0.5 ± 0.2 2.3 0.8 1 2 3 wr q w e r q ¡VDSS . 900V

STROBE FLASHER USE IGBT

Abstract: 400UF CT20ASJ-8
Contextual Info: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20ASJ-8 STROBE FLASHER USE CT20ASJ-8 OUTLINE DRAWING Dimensions in mm 0.5 ± 0.1 1.5 ± 0.2 6.5 5.0 ± 0.2 1.0 2.3 2.3 10MAX. 2.3MIN. 0.9MAX. 1.0MAX. 5.5 ± 0.2 4 0.5 ± 0.2 2.3 0.8 1 2 3 wr q GATE w COLLECTOR

Contextual Info: MITSUBISHI Nch POWER MOSFET FS2ASH-3 HIGH-SPEED SWITCHING USE FS2ASH-3 OUTLINE DRAWING Dimensions in mm 0.5 ± 0.1 2.3 2.3 2.3MIN. 1.0 A 0.5 ± 0.2 0.8 2.3 0.9MAX. 1.0MAX. 5.5 ± 0.2 r 10MAX. 1.5 ± 0.2 6.5 5.0 ± 0.2 q w e wr ¡2.5V DRIVE ¡VDSS . 150V

QCA100AA100

Abstract: DIODE b2x
Contextual Info: TRANSISTOR MODULE QCA100AA100 UL;E76102 （M） 15 （Applications） Motor Control（VVVF） , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application 25.0 3-M6 L=10max AMP110 t=0.5 30.0max E1 B1 •Maximum Ratings Unit：A （Tj＝25℃ unless otherwise specified）

QCA100AA120

Contextual Info: TRANSISTOR MODULE QCA100AA120 UL;E76102 （M） 15 （Applications） Motor Control（VVVF）, AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application 25.0 3-M6 L=10max AMP110 t=0.5 30.0max E1 B1 •Maximum Ratings Unit：A （Tj＝25℃ unless otherwise specified）

QCA200BA60

Abstract: Diode B2x
Contextual Info: TRANSISTOR MODULE（Hi-β） QCA200BA60 UL;E76102 （M） 15 C1 25.0 3-M6 L=10max AMP110 t=0.5 E1 B1 Unit：A （Tj＝25℃ unless otherwise specified） Item VCBO Collector-Base Voltage VCEX Collector-Emitter Voltage VEBO Emitter-Base Voltage −IC E1 B1

Contextual Info: 208 CFM A H I C » »Uh [&TQKO TYPE CFMA 10Max 14M ax 3.5 i - J CO o e g D Description o • A M IF filters com b in ing m atching coil w ith 4.5 I CFM 2 typ e in resin case • C enter frequ en cy range: 4 5 0 — 470K H z • B an dw idth at 6dB : 2 — 11 KHz

MN638S

Abstract: ic 3A hfe 500
Contextual Info: Power Transistor MN638S Test Conditions VCB=330V VEB=6V IC=25mA VCE=2V, IC=3A IC=4A, IB=20mA External Dimensions TO220S 4.44±0.2 10.2±0.3 1.3±0.2 V a +0.3 ICBO IEBO V BR CEO hFE VCE (sat) (Ta=25ºC) Unit µA mA V Ratings 10max 20max 330 to 430 1500min

transistor 2sc3852

Contextual Info: Power Transistor 2SC3852 Ta=25ºC Unit µA µA V Ratings 10max 100max 60min 500min 0.5max 15typ 50typ External Dimensions TO220F (full-mold) 10.0 4.2 2.8 3.3 C0.5 16.9 V MHz pF a b 2.6 1.35 1.35 0.85 Typical Switching Characteristics (common emitter) VCC