107BALL Search Results

Flash MCp nand DRAM 107-ball

Abstract: SAMSUNG MCP nand sdram mcp KAG00H008M-FGG2 UtRAM Density
Contextual Info: Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.1 September 2003 Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM

smartphone MOTHERBOARD CIRCUIT diagram

Abstract: AP-DOC-070 Micron 512MB nand FLASH mcp J9 G3 MARKING G3 MICRON mcp QUALCOMM Reference manual A0-A21 DM270 Flash MCp nand DRAM 107-ball
Contextual Info: DiskOnChip-Based MCP Including DiskOnChip G3 and PSRAM Data Sheet, July 2004 Highlights DiskOnChip-based MCP Multi-Chip Package is a complete memory solution. Efficiently packed in a small Fine-Pitch Ball Grid Array (FBGA) package, it is ideal for data and code

DM270

Abstract: 2Gb NAND FLASH Toshiba QUALCOMM Reference manual Diskonchip toshiba 107ball marking G3 smartphone MOTHERBOARD CIRCUIT diagram Micron 512MB nand FLASH mcp M-Systems diskonchip mcp toshiba MLC nand flash
Contextual Info: DiskOnChip-Based MCP Including DiskOnChip G3 and PSRAM Data Sheet, July 2004 Highlights DiskOnChip-based MCP Multi-Chip Package is a complete memory solution. Efficiently packed in a small Fine-Pitch Ball Grid Array (FBGA) package, it is ideal for data and code

Contextual Info: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous

MB84VF5F5F5J2-70

Abstract: MBM29DL64DF
Contextual Info: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

SCSP M18

Abstract: PF38F 3098* intel PF38F4050
Contextual Info: Intel StrataFlash Cellular Memory M18 Datasheet Product Features High performance Read, Program and Erase — 93 ns initial access for reads — 512-Mbit device: 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 256-Mbit device: 133 MHz with zero wait-state

Hynix 128Gb Nand flash

Abstract: Hynix 64Gb Nand flash nand flash HYNIX MLC 128GB Nand flash hynix Hynix 32Gb Nand flash hynix MLC nand flash 64gb nand flash hynix hynix nand flash 1.8v 4Gb hynix nand flash 4Gb Hynix E NAND
Contextual Info: Last Updated: Nov. 2006 NAND Flash PART NUMBERING HY XX X X XX XX X X - X X (X) (X) (X) (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) (11) (13) (12) (1) HYNIX MEMORY (13) OPTION(CUSTOMER) (2) COMPONENT GROUP 27 Customer Initial Option : NAND Flash (12) BAD BLOCK

PSRAM 256 FLash

Contextual Info: ISSI IS75V16F128GS32 3.0 Volt- Multi-Chip Package MCP — 128 Mbit Simultaneous Operation Flash Memory and 32 Mbit Pseudo Static RAM TARGET INFORMATION OCTOBER 2002 MCP FEATURES • Power supply voltage 2.7V to 3.1V • High performance: Flash: 70ns maximum access time

Contextual Info: ISSI IS75V16F128GS32 3.0 Volt Multi-Chip Package MCP — 128 Mbit Simultaneous Operation Flash Memory and 32 Mbit Pseudo Static RAM PRELIMINARY INFORMATION January 2003 MCP FEATURES • Power supply voltage 2.7V to 3.3V • High performance: Flash: 70ns maximum access time

SA52 DT 90

Contextual Info: ISSI IS75V16F96GS32 3.0 Volt Multi-Chip Package MCP — 96 Mbit Simultaneous Operation Flash Memory and 32 Mbit Pseudo SRAM MCP FEATURES • Power supply voltage 2.7V to 3.3V • High performance: Flash: 70ns maximum access time PSRAM: 65ns maximum access time

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50402-1E 3Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM CMOS 64M (x16) FLASH MEMORY & 64M (×16) FLASH MEMORY & 32M (×16) Mobile FCRAM TM MB84VF5F5F4J2-70 • FEATURES • Power supply voltage of 2.7 V to 3.1 V

MB84VF5F5F4J2-70

Abstract: MBM29DL64DF
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50402-2E 3 Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM CMOS 64M (x16) FLASH MEMORY & 64M (×16) FLASH MEMORY & 32M (×16) Mobile FCRAM TM MB84VF5F5F4J2-70 • FEATURES • Power supply voltage of 2.7 V to 3.1 V

50501

Abstract: MB84VZ064D-70 MBM29DL64DF
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50501-1E 4 Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM & SRAM CMOS 64M (x16) FLASH MEMORY & 64M (×16) FLASH MEMORY & 32M (×16) Mobile FCRAMTM & 8M (×16) STATIC RAM MB84VZ064D-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.1 V

107-pin

Abstract: 4kw marking
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.4E 3Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM CMOS 64M (x16) FLASH MEMORY & 32M (×16) FLASH MEMORY & 32M (×16) Mobile FCRAM TM MB84VF5F4F4J1-70 • FEATURES • Power supply voltage of 2.7 to 3.1V • High performance

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.1E 3Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM CMOS 64M (x16) FLASH MEMORY & 32M (×16) FLASH MEMORY & 32M (×16) Mobile FCRAM TM MB84VF5F4F4J2-70 • FEATURES • Power supply voltage of 2.7 to 3.1V • High performance

4kw marking

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.4E 3Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM CMOS 64M (x16) FLASH MEMORY & 64M (×16) FLASH MEMORY & 32M (×16) Mobile FCRAM TM MB84VF5F5F4J2-70 • FEATURES • Power supply voltage of 2.7 to 3.1V • High performance

PF38F4050

Abstract: PF48F SCSP M18 105-Ball pf38f5060m0y 3098* intel
Contextual Info: Intel StrataFlash Cellular Memory M18 Datasheet Product Features • High Performance Read, Program and Erase — 96 ns initial access for reads — 512-Mbit device: 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 256-Mbit device: 133 MHz with zero wait-state

Contextual Info: MB84VF5F5F4J2-70 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.

PF38F4060M0Y3DF

Abstract: PF38F3040 PF38F5060M0Y0CF m36w0r6050u PF48F6000M0Y1BH M36W0R5040 PF38F5070M0Y1EE M36W0T5040 Pf38f3050m0y0Ce PF38F3050M0Y3DF
Contextual Info: product line card Numonyx NOR flash memory Numonyx NOR flash memory for wireless applications A wide selection of NOR plus RAM multi-chip package offerings, and NOR only packages N u m on y x M S t r a t a f l a s h ® C e l l u l a r M e m or y NOR Density

PF38F4060M

Abstract: PF38F4060 PF48F3000M0Y0QE PF48F6000 2N 8904 PF556 IC TOP 8901
Contextual Info: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous

WP1F

Abstract: BA8D11 PF38F4060 PF38F4060M PF48F6000M0Y1 8S19 L18 65nm PF48F3000M0Y0QE x16C
Contextual Info: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous

MD4832-D512-V3Q18-X-P

Abstract: MD4331-d1G-V3Q18-X-P marking Diskonchip MARKING G3 md4832-d512 ELPIDA K2 MD4811-D512-V3Q18-X MICRON mcp nand mcp elpida QUALCOMM Reference manual
Contextual Info: DiskOnChip -Based MCP Including Mobile DiskOnChip G3 and Mobile RAM Data Sheet, February 2004 Highlights DiskOnChip-based MCP Multi-Chip Package is a complete memory solution. Efficiently packed in a small Fine-Pitch Ball Grid Array (FBGA) package, it is ideal for data and code

4kw marking

Abstract: MB84VF5F4F4J1-70 MBM29DL64DF
Contextual Info: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

107-pin

Abstract: FCRAM MBM29DL64DF
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.1E 3Stacked MCP Multi-Chip Package FLASH & FLASH & FCRAM CMOS 64M (x16) FLASH MEMORY & 32M (×16) FLASH MEMORY & 64M (×16) Mobile FCRAM TM MB84VF5F4F5J1-70 • FEATURES • Power supply voltage of 2.7 to 3.1V • High performance