104 B DIODE Search Results

transistor buz 104

Contextual Info: SIEMENS BUZ 104 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated k • dv/df rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type BUZ 104 Vbs 50V b 17.5 A ^bS on 0.1 Û Package

12,000 volt 50 amp diode

Abstract: scr 1000 amps cke scr c 3807 RW2100AC1600 scr welding RW1000AC1000 SCR 406 welding schematics welding schematic
Contextual Info: WATER COOLED SCR AND DIODE ASSEMBLIES FIGURE FIGURE 103 104 A C 1.750 D B 2.06 Ref. 12.000 5.50 Max. 8.560 Max. Red E White SCR2 Schematic White Red Product Features • Used where space is limited ■ High current ■ Economical CKE Number RW700AC1000 RW700AC1200

Contextual Info: WATER COOLED SCR AND DIODE ASSEMBLIES FIGURE 103 A C FIGURE 104 1.750 D B 2.06 Ref. 12.000 5.50 Max. 8.560 Max. Red Schematic E White SCR2 White Red Product Features • Used where space is limited ■ High current ■ Economical CKE Number RW700AC1000 RW700AC1200

w2k transistor

Abstract: inverter ups pcb service manual MSM855 SM855 msm855-ckcon MSMPS104 MSM855-LANCON 855PM cpu support D-Sub 37-pin female Connector PCB RIGHT ANGLE MSEBX855
Contextual Info: TECHNICAL USER'S MANUAL FOR: PC/104 plus smartModule855 MSM855/HLV/B/B2 Nordstrasse 11/F CH- 4542 Luterbach Tel.: +41 0 32 681 58 00 Fax: +41 (0)32 681 58 01 support@digitallogic.com Email: Homepage: http://www.digitallogic.com DIGITAL-LOGIC AG MSM855 Manual V1.4A

ds130 diode

Abstract: ds130 diode 1N4148 SMD diode array SMD DIODE 1N4148 PACKAGE dual diode 1N4148 SMD DS-130 DS1185 smd diode arrays DS1103
Contextual Info: DS130 thru DS1185 Equivalent To: MMAD130 thru MMAD1185 I n te r n a t/ onal S e m ic o n d u c t o r , I n c . SURFACE MOUNT DIODE DIP ARRAYS ISI Part # Motorola Part # Circuit Package DS130 M M AD130 1 S M B D 2-7 D S 1 103 M M A D 11 03 2 S M B D 2-7 D S 1 104

SA10

Abstract: SA10A SA11 SA11A SA12 SA12A SA170 442 TVS marking code
Contextual Info: is TAIWAN SEMICONDUCTOR RoHS COMPLIANCE SA SERIES 500 Watts Transient Voltage Suppressor DO-15 .140 3.6 .104(2.6) Features <{> 1.0 (25.4) MIN. DIA. P lastic p a c k a g e h a s U n d e rw rite rs L a b o rato ry .300 (7 . 6) .230 (5 .8) F ia m m a b iiity C las sific atio n 9 4 V -0

Contextual Info: ADVANCED POtdER TECHNOLOGY b lE D • 000071b =104 ■ AVP ■R A d v a n c ed W /Æ P o w e r Te c h n o l o g y APT601R3KN APT601R6KN 600V 6.5A 1.30Q 600V 5.8A 1.60Ü POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS

led 7 seg

Abstract: CON EISA31 DIODE C244 s-g9312 74123 12v 74123 PCA82C250T IC 74LS123 c1951 PCA82C250
Contextual Info: A B C D E +5V VR1 503 1 3 2 U1 4 +5V R13 104 3 PIN47 PIN48 PIN49 PIN50 PIN51 PIN52 PIN53 PIN54 47 48 49 50 51 52 53 54 PIN55 PIN56 PIN57 PIN58 PIN59 PIN60 PIN61 PIN63 55 56 57 58 59 60 61 63 PIN65 PIN66 PIN67 PIN68 PIN69 PIN70 PIN71 PIN72 65 66 67 68 69 70

SP1104

Abstract: SP-1104
Contextual Info: SIPEX CORP aSE D • 6203711 0002552 7 ■ C il^ A V \ / lk A * A ^CO'paatof'^ SPI 104 SIGNAL PROCESSING EXCELLENCE T - 9 - 2 - 2 /- HIGH PERFORMANCE ANALOG ARRAY DESCRIPTION The SP1104 Is a high density, high performance a n a lo g array c o n ta in in g 444 line ar b ip o la r

SP-1104

Contextual Info: C il^ A V C D iin ü M IU W /V ^Corporation^ SPI 104 SIGNAL PROCESSING EXCELLENCE HIGH PERFORMANCE ANALOG ARRAY DESCRIPTION The SP1104 is a high density, high perform ance a n a lo g a rra y c o n ta in in g 444 lin e a r b ip o la r transistors. Twelve high current transistors capable

3180 diode

Abstract: MV104
Contextual Info: MV 104 SILICON W C b- S IL IC O N EPICAP DUAL V O L T A G E -V A R IA B L E C A P A C IT A N C E D IO D E S D IO D E S . . . designed f o r F M tu n in g , general fre q u e n c y c o n tro l and tu n in g , or 3 7 -4 2 pF any to p -o f-th e -lin e a p p lic a tio n re q u irin g b a ck -to -b a ck d io d e c onfigu

CK6659

Abstract: K104 K1042 Raytheon Company subminiature tubes
Contextual Info: Printed in u*s.a. TECHNICAL INFORMATION RAYTHEON ÇÆ T h e C K 6 6 5 9 /C K 1 0 4 2 -C -e . LL e—n £ J- . is an in s ta n t s ta r tin g , c o l d - c a th o d e , g a s - f i l l e d SUBMINIATURE GAS*FILLED DIODE TYPE CK6659/ C K 104 2 S L -o -n -j- d io d e o f s u b m in ia tu re c o n ­

Contextual Info: SIEMENS HiRel Silicon Schottky Diode BAT 15 Features • HiRel Discrete and Microwave Semiconductor • Medium barrier diodes for detector and mixer applications • Hermetically sealed microwave package • C qualified • ESA/SCC Detail Spec. No.: 5106/014

NF 034

Abstract: BAT14-013 BAT14-033 BAT14-043 BAT14-063 BAT14-073 BAT14-093 BAT14-103 BAT14-123 Q62702D1345
Contextual Info: SIEMENS BAT 14 HiRel Silicon Schottky Diode Features • HiRel Discrete and Microwave Semiconductor • Medium barrier diodes for detector and mixer applications • Hermetically sealed microwave package • ^ esa qualified • ESA/SCC Detail Spec. No.: 5106/014

BAT DIODES

Abstract: BAT15-013 BAT15-033 BAT15-043 BAT15-063 BAT15-073 BAT15-093 BAT15-103 BAT15-123 Q62702A1178
Contextual Info: HiRel Silicon Schottky Diode BAT 15 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ Medium barrier diodes for detector and mixer applications ¥ Hermetically sealed microwave package ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5106/014 ESD: Electrostatic discharge sensitive device,

Q62702-A118

Contextual Info: SIEMENS HiRel Silicon Schottky Diode BAT 15 Features • HiRel Discrete and Microwave Semiconductor • Medium barrier diodes for detector and mixer applications • Hermetically sealed microwave package • qualified • ESA/SCC Detail Spec. No.: 5106/014

BAT14T1

Abstract: il 074 14013 BAT14-014ES bat14
Contextual Info: SIEMENS HiRel Silicon Schottky Diode BAT 14 Features • HiRel Discrete and Microwave Semiconductor • Medium barrier diodes for detector and mixer applications • Hermetically sealed microwave package • C -esa qualified • ESA/SCC Detail Spec. No.: 5106/014

Resistor MSB 124

Abstract: RK738 RK 0313 asea resistor 5245 Resistor MSB 54 RRMH ASEA Rod Resistors asea pin terminal asea time-lag relay RI RRMH
Contextual Info: Catalogue RK 7 8 -2 E RELAY COM PONENTS STUD-TYPE RTLF stud-type diode, p. 1 RTNK sho rt-circuitin g com p orten , p. 2 MRB, MSB stud-type resistors, pages 2, 3 MSTA, MSTB therm istors, p. 4 Accessories, p. 5 Plug-in type relay com ponents, oil-fille d capa­

NF 034

Abstract: marking A03 BAT DIODES BAT14-013 BAT14-033 BAT14-043 BAT14-063 BAT14-073 BAT14-093 BAT14-103
Contextual Info: HiRel Silicon Schottky Diode BAT 14 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ Medium barrier diodes for detector and mixer applications ¥ Hermetically sealed microwave package ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5106/014 ESD: Electrostatic discharge sensitive device,

SOD-80

Abstract: SOD-123 SOD-80 sod123 ON SOD-123 CLL4099 CLL4125 CLL457A CLL459A zener sod-80 CLL4627
Contextual Info: PCN #: 104 Notification Date: 24 November 2004 145 Adams Avenue Hauppauge, New York 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Mailto: processchange@centralsemi.com http://www.centralsemi.com/processchange Process Change Notice Parts Affected: Surface mount Zener diodes and switching diodes packaged in the SOD-80, hermetically sealed,

U 806 DI

Abstract: SM18CXC134 SM18C
Contextual Info: lilESTCODE SEMICONDUCTORS 3TE D • DD02b31 0 ■ lilESB T -Ô 3 -2 J WESTCODE SEMICONDUCTORS «134 Capsule Fast Recovery Diode The 134 series of fast recovery diodes is suitable as freewheel, anti-parallel and snubber diodes for G.T.O.s and features soft recovery, low stored charge and low forward recovery voltage.

BAQ806

Abstract: diode 1407 diode 104
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 BAQ806 AM PIN diode Product specification File under Discrete Semiconductors, SC10 1998 Aug 03 Philips Semiconductors Product specification AM PIN diode BAQ806 FEATURES DESCRIPTION • Glass passivated

Contextual Info: 1N5221B - 1N5263B 0.5W Hermetically Sealed Glass Zener Diodes DO-35 Small Signal Product Features Zener voltage range 2.4 to 56 volts DO-35 package JEDEC Through-hole device type mounting Hemetically sealed glass Compression bonded construction All extermal surface are corrosion

skn diodes

Abstract: B955 semikron E30 semikron skn 7000AA B9-56 152A2 gto 1600v 420F
Contextual Info: Öl3bb71 0003^51 Sb5 « S E K G S1E D SEMIKRON SEMIKRON INC V rsm V rrm V Ifa v 420 A SKN 420 F 1800 SKN 420 F 18 2000 SKN 420 F 20 2200 SKN 420 F 22 2500 SKN 420 F 25 Symbol Ifav Fast Recovery Rectifier Diodes " ''/ T q J sin. 180; Tease = 85 °C) Conditions