103B10 Search Results

Contextual Info: V23148A 103B101 Product Details Mid-Ran ge PC Board Re lays Previous 1 . 16 17 18 [19] 20 Next Quick Links Converted to EU RoHS/ELV Compliant Statement of Compliance Check Pricing & Availability Search for Tooling Product Feature Selector Compare Products

T491C

Abstract: AGR19030XF 100B100JCA500X AGR19030EF JESD22-C101A j598 SEMICONDUCTOR J598 W1235
Contextual Info: Preliminary Data Sheet June 2004 AGR19030EF 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030EF is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

E17294

Abstract: 151-243 ntc RA53 thermistor 151-215 ntc VA3410 thermistor Ra53 RS 151-243 THERMISTOR 4.7 151-237 198-949 ntc
Contextual Info: Issued March 1994 E17294 Thermistors NTC thermistors The RS range of NTC thermistors includes standard tolerance negative temperature coefficient thermistors, a range of small close tolerance R/T curve matched thermistors and a range of DO-35 package devices.

J56-1

Abstract: ep 55 transistor
Contextual Info: AGR19030EF 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030EF is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

j561

Abstract: T491C AGR19030XF 100B100JCA500X AGR19030E AGR19030EF AGR19030EU JESD22-C101A 100B100 DSA0020680
Contextual Info: Preliminary Data Sheet April 2004 AGR19030E 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19030E is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

bfl5

Contextual Info: b3E i> WM 4 5 5 1 0 7 2 0ÜÜ1Q72 HONEYl i l ELL/ S 220 HH0N3 Honeywell S E C Advance Information TEST-BUS INTERFACE UNIT HTIU2100 FEATURES • Module Test and Maintenance Bus Interface - IEEE P1149.5 Compatible Backplane - Master or Slave Operation - Module Clock Generation Capability

GM473

Abstract: thermistor 4k7 RA53 thermistor thermistor ntc RA53 NTC 4k7 thermistor Characteristic curve BC107 NTC glass bead thermistor 100K PTC thermistor 5k table 151-237 bc107 curves
Contextual Info: Issued March 1997 232-4538 Data Pack E Thermistors Data Sheet NTC thermistors The RS range of NTC thermistors includes standard tolerance negative temperature coefficient thermistors, a range of small close tolerance R/T curve matched thermistors and a range of DO-35 package

RA53 thermistor

Abstract: 151-215 ntc RS 256-073 PTC thermistor 5k table 151-237 PTC thermistor 4.7k 151-221 ntc Characteristic curve BC107 PTC thermistor 5k NTC 1K 340
Contextual Info: Issued March 1994 017-294 Data Pack E Thermistors Data Sheet NTC thermistors The RS range of NTC thermistors includes standard tolerance negative temperature coefficient thermistors, a range of small close tolerance R/T curve matched thermistors and a range of DO-35 package

151-221 ntc

Abstract: 151-237 Characteristic curve BC107 151-215 ntc RA53 thermistor PTC thermistor 5k table thermistor ntc RA53 GM473 ked472 NTC 1000
Contextual Info: Issued March 1999 232-4538 Data Pack E Thermistors Data Sheet NTC thermistors The RS range of NTC thermistors includes standard tolerance negative temperature coefficient thermistors, a range of small close tolerance R/T curve matched thermistors and a range of DO-35 package

AGR19030XF

Abstract: 100B100JCA500X AGR19030E AGR19030EF AGR19030EU JESD22-C101A
Contextual Info: Preliminary Data Sheet March 2004 AGR19030E 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19030E is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

AGR19030XF

Abstract: 100B100JCA500X AGR19030EF JESD22-C101A
Contextual Info: AGR19030EF 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030EF is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

ic 8255 PPI

Abstract: PPI 8255 interface data serial 8255 PPI Chip PPI 8255 interface word control Control word 8255 PPI ppi interface 1007 SC1114 NUM mnda
Contextual Info: Honeywell Advance Information TEST-BUS INTERFACE UNIT HTIU2100 FEATURES • Module Test and Maintenance Bus Interface - IEEE P1149.5 Compatible Backplane - Master or Slave Operation - Module Clock Generation Capability • Serial Chip-Level Test Interface