1035 TN Search Results

stk power amplifier ic 1035

Abstract: STK1035 0Z96 stk power amplifier ic C739A STK IC ic stk 025 stk 018 STK-1035 stk 1035
Contextual Info: STK 1035 Thick Film Hybrid IC 2 M :M 3 0 W min. A F Power Amplifier Output Stage D.P.P. 30W min. A F / N 0r7 — T > 7 ° fc tì* & ( D .P .P .) X = 'V ★I MS T syst em. ★Emi t t er resi stors i nstal l ed. • msk x $."/ $ • t u& ^ . • X £ *y $

VEB mikroelektronik

Abstract: Datenblattsammlung SY 625 V40511D mikroelektronik datenblattsammlung Diode KD 514 KD512A mikroelektronik Berlin "halbleiterwerk frankfurt" VEB Kombinat mikroelektronik Erfurt
Contextual Info: \ñ ñ lB rW *m X S á B Í4 ti& * 311' ill c e l e k t r o n i k - b a u e i e m e n t e ? 2/86 . Die vorliegenden Datenblätter beinhalten Listen i Infonmatic-aen ü b e r elektronischer Sie können abgeleitet beinhalten n ur z u r Information» Halbleiterbauelemente

L4651

Abstract: magnetron 10 kw radar tube litton Magnetron 1.5 kW magnetron 4,1 kv
Contextual Info: L9/cjrldP PULSE M AGNETRON L-4651 5 Kilowatts Minimum Peak Power, Fixed Frequency 9375 ±I40 MHz, Positive Pulsed. The L-4651 is a positive anode magnetron designed for use in compact, lightweight, low cost commercial ai rborne and ma rine radar systems. ABSOLUTE RATINGS

transistor kp 303

Abstract: KP303A Datenblattsammlung VEB mikroelektronik mikroelektronik datenblattsammlung mikroelektronik DDR D818G KP307A Thyristor T6N KP303D
Contextual Info: In n lD ÍN S r ^ e l e k t r o n l k - B a u e l e m e n t e Mir I r dei Dienstgebrauch !ä SS fil I f ! DATENBLATTSAMMUJNG :Jjj§ •■tai elektronische bauelem ente ìm m ttí H : ■ 51 52 mm i l 11 iS Mm L Â | B « : i ms 1 -% 11 ■IP & 1'86 Die vorliegenden Datenblatt®r d i e n m nur zojp Information« Sie

KU 612

Abstract: BTW 600 btw 50 200 ts 435 ku 606 KU 608 RP6020 BTW50-1200 TK1804 RG612
Contextual Info: new standard single phase half-controlled metal stacks q nouveaux ponts standards métalliques monophasés mixtes A verage o u tp u t cu rra n t C o u ra n t m oyen de s o rtie Type Tamb BDT BDT BDT BDT BDT BDT 15 200 15 400 15 600 15 800 15 1000 15 1200 C

LA 2910

Abstract: SIEMENS n87 etd Siemens n67 p core
Contextual Info: ETD 49/25/16 Core B66367 • In a c c o rd a n c e w ith IF C 1185 • Q uality assurance per UTE 83313-004/ CECC 25 301-004 material N27 • F o r S M P S tra n s fo rm e rs w ith o p tim u m • w eight/perform ance ratio at small volum e ETD cores are supplied as pieces

UEI 20 SP 010

Abstract: Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D
Contextual Info: e l e k t r o m k - b a u e ì e m e n t e * W UKaÊÊi I Ä I L I I m V w •1 vît M •'4 n, ' I ill ■ DATEN BLATTSAMM LU NG elektronische bauelemente ?: V' I j| D A I Ï K B L A U S A MML ÜHG "E lektronische Bauelemente1' Ausgabe 1/89 14 : "Neue und weiterentwiekelte Bauelemente sowie ausgewählte Importbauelemente"

Contextual Info: October 1989 Edition 1.0 FUJITSU DATA SHEET M BM 101C500-15 262144-BIT BICMOS ECL RANDOM ACCESS MEMORY DESCRIPTION The Fujitsu MBM101C500 is fully decoded 262144 bit BICMOS ECL random access memory designed for main memory, control and buffer storage applications. TNs device is

ATMEL 1230

Abstract: ATMEL 1237 at28hc256 die
Contextual Info: Features • • • • • • • • • • • • • High Performance CMOS Technology Low Power Dissipation - Active and Standby Hardware and Software Data Protection Features DATA Polling for End of Write Detection High Reliability - Endurance: 104 Cycles

Contextual Info: July 1992 100311 Low Skew 1:9 Differential Clock Driver General Description Features The 100311 contains nine low skew differential drivers, de­ signed for generation of multiple, minimum skew differential clocks from a single differential input CLKIN, CLKIN , If a

Contextual Info: RS Series +105°C, High Ripple Current /ij$fc;J$ , Long Life Assurance(M pnp). Low Impedance^PIJrCpp) FEATURES 1. Load life 105°C and low ESR 2. Excellent ripple current capability. 3. Used in communication equipments, switching power supply, industrial measuring

3SK38A

Abstract: 3SK38 251C
Contextual Info: 3SK O 38A ^ IL IC O N N-CHANNEL MOS FIELD EFFECT TRANSÌSTOR I f s x t l a ^ ''HiSffl INDUSTRIAL APPLICATIONS Unit in mm o Chopper Circuit Applications • * >- * #&39MAX. ; f*s Ron = 5 0 0 n Max. Roff=100Mfi (Min.) 013 Vemf = 2/‘V/'C (Max.) i'' - — h • K u 4 y , ^ — V •V —-*

Halbleiterbauelemente DDR

Abstract: transistor vergleichsliste u82720 Datenblattsammlung VEB mikroelektronik aktive elektronische bauelemente ddr mikroelektronik datenblattsammlung je 3055 Motorola mikroelektronik DDR Transistor Vergleichsliste DDR
Contextual Info: íx}i3í iu ]9n;g'q s p o s i l i o j p j S j © DNmiAf W¥S±±na N31¥Q >l!UDüq>|! ZUR B E A C H T U N G Die vorliegenden Datenblätter beinhalten ausführliche technische Angaben von aktiven elektronischen Bauelementen des in den "Listen Elektronischer Bauelemente und Bausteine" LEB)

Contextual Info: HIGH-SPEED BiCMOS ECL STATIC RAM 16K 16Kx 1-BIT SRAM IDT10480 IDT100480 IDT101480 In te g ra te d D e v ic e T e c h n o lo g y , In c. FEATURES: DESCRIPTION: • • • • • • • The IDT10480, IDT100480 and IDT101480 are 16,384-bit high-speed BiCEMOS ECL static random access memo­

IHb si

Contextual Info: HIGH-SPEED BiCMOS ECL STATIC RAM 256K 64K x 4-BIT with SYNCHRONOUS WRITE FEATURES: • • • • • • 65,535-words x 4-bit organization Address access time: 12/15 ns Read Data output latch for extended hold time Short Write Cycle input data and address valid time

100A484

Abstract: 101A48 IDT10484 ECL-10K IDT100A4M 4Kx4 SRAM
Contextual Info: r — I N T E G R A T E D DE VICE 3ÔE D • 4 Ô 2 S771 D Ü 0 b071 4 DÉ IDT 3 > '0 < Z HIGH-SPEED BiCMOS ECL STATIC RAM 16K 4K x 4-BIT SRAM PRELIMINARY IDT10A484 IDT100A434 IDT101A484 FEATURES; DESCRIPTION: • • ■ • • • • • The IDT10A484,1DT100A484 and IDT101A484 are 16,384bit high-speed BiCEMOS ECL static random access

diode SY 192

Abstract: KP902A Datenblattsammlung Halbleiterbauelemente DDR VEB mikroelektronik transistor kp mikroelektronik datenblattsammlung "halbleiterwerk frankfurt" KP306a mikroelektronik DDR
Contextual Info: . • M ' - l ä r o u jk 1 U ’i m - í!Í'.>. "lA T T S A M M . 'Q elektronische Bauelemente IWT iO 1/87 I# %# S Die vorliegenden Datenblätter dienen nur zur Information« Sie beinhalten Informationen über Halbleiterbauelemente des in den Listen elektronischer Bauelemente eingestuften Sortiments«

philips ET-E 60

Abstract: T150
Contextual Info: O o PHILIPS DCG DCG 7/100B Grid-controlled MERCURY VAPOUB RECTIFYING TUBE TUBE REDRESSEUR A VAPEUR DE MERCURE a grille Glttergesteuerte GLEICHRICHTERF.O'HRE MIT QUECKSILBERDAliPFFULLUNG Cathode Cathode Katode :oxide-coated :oxyde :Oxyd. Heating : Indirect, k connected to f

Contextual Info: Integrated Device Technology, Inc. FEATURES: • • • • • • • • ADVANCE INFORMATION IDT10596RR IDT100596RR IDT101596RR SELF-TIMED BiCMOS ECL STATIC RAM 256K 32K x 9-BIT SRAM 32,768-words x 9-bit organization Self-Timed Write, with registers on inputs and outputs

ecl100

Contextual Info: SELF-TIMED BiCMOS ECL STATIC RAM 256K 64K X 4-BIT STRAM IDT10506RL IDT100506RL IDT101506RL Technology, Inc. FEATURES: • 65,536-words x 4-bit organization • Self-Timed Write, with registers on inputs and latches on outputs • Balanced Read/Write cycle time: 12/i5ns

Contextual Info: HM101515 Series 262,144-words x 4-bits Fully Decoded Random Access Memory Description Pin Arrangement The HM101515 is ECL 100K com patible, 262,144-word by 4-bit read/write random access memory developed for high speed systems such as scratch pads and control/buffer storage.

1825 - 0148

Contextual Info: Philips Components 10110 Document No. 853-0646 ECN No. 99799 Date of Issue June 14, 1990 Status Product Specification Gate Dual 3-lnput/3-Output OR Gate Line Driver ECL Products ORDERING INFORMATION • Typical propagation delay: 2.4ns • Typical supply current

Contextual Info: BIPOLAR DIGITAL INTEGRATED CIRCUIT ELECTRON DEVICE ¿¿PB1 0 1 4 4 D O 2 5 6 -B IT B IPO LA R E C L RAM y -.jy- yvi o I w ^ - - V/ D E S C R IP T I ON The //P B 1 0 1 4 4 D integrated circ u its are high-speed E C L interface, 2 5 6 -b it Random A c c e ss

Contextual Info: I N T E G R A T E D DEVICE 3flE » m 4Ö2S771 OOOfl'^'i 2 • IDT - C - lA k > - Z Z - b 9 , Integrated Device Technology, Inc. HIGH-SPEED BiCMOS ECL STATIC RAM 4K 1Kx 4-BIT SRAM PRELIMINARY IDT10474 IDT100474 IDT101474 FEATURES: DESCRIPTION: • • •