LITTON Search Results

litton

Abstract: GC200 ELECTRON TUBE 10 microwave tubes 20000U
Contextual Info: 5767 6481 P L A N A R Litton Planar Triode Types 5767 and 6481 are in­ tended primarily for use in microwave circuits as CW oscillators at frequencies up to 3.3 Gc. These planar-electrode disc-seal triodes may be used as integral parts of a tuned cavity. Their low internal

frequency division multiplexing circuits

Abstract: litton litton slip ring litton FORJ FORJ litton 800-336-2112 time division multiplexer time division multiplexing WDM Filter spectrum litton poly
Contextual Info: Application Notes Poly-Scientific www.litton-ps.com Fiber Optic Rotary Joints On-Axis and Off-Axis Litton Poly-Scientific manufactures two types of FORJs. A Fiber Optic Rotary Joint FORJ is a device used to pass optical signals from a stationary structure to a rotating mechanism in a fiber optic

litton

Abstract: poly-scientific litton 800-336-2112 litton CONNECTOR SMA 905 fiber dimensions MIL-S-901 sma 906 safenet FO4663R optic switch
Contextual Info: www.litton-ps.com Litton Poly-Scientific Ruggedized Multimode Fiber Optic Switch FO4663R APPLICATIONS • FDDI LANs • Local area network LAN bypass switching • Loopback diagnostic testing • Ring networks • Test sets • Tactical platforms (ships, aircraft, etc.)

litton

Abstract: Litton Solid State D-0777 ultra low noise 12GHz radar 77 ghz receiver
Contextual Info: LITT ON I N D / LI TT ON SOLID SbE D S5 4 M B 0 Q 0[][]055b 04fi « L I T T Litton Ultra Low-Noise M ic ro w a v e G aA s FET Electron Devices D-0777 Preliminary Specifications 440 FEATURES 280 • Noise Figure 1.9 dB @ < 46 I 18 g h z Y77A ■ Gain at NF 8 dB @ 18 GHz

litton

Abstract: Litton Solid State transistor 2501 D2501 Litton Systems 250-1 MAG D-2501 RF FET TRANSISTOR 3 GHZ VDS35 55M4S
Contextual Info: J— X ' V il X 1 H J / / L 1 I LITTON IND/LITTON SOLI] Litton Electron Devices SbE D m 55ML42GD □□ODSDb 55T • L I T T Low Noise/Medium Power Microwave GaAs FET D-2501 Preliminary Specifications FEATURES ■ Noise Figure 2.2 dB @ 8 ghz ■ Gain at NF 9.0dB @ 8 g h z

Litton Electron Devices microwave tubes

Abstract: Litton klystron klystron L-4880B UG344 two cavity klystron reflex klystron klystron pin connection 4880B Litton Electron Devices
Contextual Info: Litton Electron Devices 103S Waîrrmnsrar fîrivê Wiiiflmspnn Pennsylvania 17701 Pnona 717 326-3561 Fax: (717) 326-2903 PRODUCTION SPECIFICATION TYPE L-4880A, B, C, E, F REFLEX KLYSTRON DESCRIPTION Conduction Cooled, Long Life, Low Distortion, Extremely Stable Reflex

Diode LT 9250

Abstract: LT 9250 0/Diode LT 9250
Contextual Info: LITTON IND/LITTON SOLI» SbE D • SSMMSDG OODDSOG Ö31 ■ L I T T 7 - Ö / - Ö GALLIUM ARSENIDE CW IMPATT DIODES 9250 Series • • • • 5-21 GHz High C W Output Power High Efficiency— Typically 1 8 -2 0 % Burnout Resistant to Circuit Mismatches High Reliability— Greater than 106 hrs M TTF

Contextual Info: LITTON IND/LITTON SOLID Litton SbE D 554M200 D D D D S m 32b « L I T T M edium Power M icrow ave GaAs FET Electron Devices D-3501 Preliminary Specifications FEATURES - • O utput Power 23 dBm @ 8 g h z ■ - UM. 50 ^DRAIN 1/ / / / / / / / / / 7T///7 ///////7 7 7 7 7 1

litton 800-336-2112

Abstract: litton litton poly
Contextual Info: www.litton-ps.com Litton Poly-Scientific Singlemode Fiber Optic Switch FO5935 APPLICATIONS • Optical network switching • Optical network protection • Optical network restoration • Configurable add/drop • Transmission equipment protection • Network test access

Contextual Info: 4 • V 11 J. IM J/ / L. ± I LITTON IND/LITTON SOLID l_ X Litton SbE » ■ SSM42GD □□□□SGb SST « L I T T Low Noise/M edium Power M icrow ave GaAs FET Electron Devices D-2501 Preliminary Specifications FEATURES ■ Noise Figure 2.2 dB @ 8 ghz ■ Gain a t NF 9.0dB @ 8 g h z

Contextual Info: LITTON IND/LITTON SOLID SbE D • S£L»4EOO DQ0G533 Sflfl ■ L I T T Hton_ LF3850 Solid State 2 Watt Power GaAs FET PRELIMINARY SPECIFICATIONS FEATURES ■ +33 dBm Typical Output Power @ 8GHz ■ 6 dB Typical Compressed Gain @ 8GHz -

Contextual Info: LITTON IND/LITTON SOLID, 5bE D ton • 5544200 0000510 T71 * L I T T M edium Power M icrow ave GaAs FET Electron Devices D-3814 Preliminary Specifications FEATURES ■ Output Power 28 dBm @ 8 ghz ■ 1dB Power Gain 9 dB @ 8 g h z ■ 0.5 x 1400 nm Ti/Pt/Au G ate Two Cells

litton CONNECTOR

Abstract: litton litton 800-336-2112 litton poly poly-scientific
Contextual Info: www.litton-ps.com Litton Poly-Scientific Multimode Fiber Optic Switch FO4635 APPLICATIONS • FDDI bypass • Local area network bypass • Optical routing • Loopback diagnostic testing • Ring network protection • Test access FEATURES • Small size 1.25”L X 0.54” W X 0.50” H

MIL-C-28859

Abstract: Litton Systems winchester electronics litton litton 400X
Contextual Info: TEST REPORT 470 TES1 REPORT COMMERCIAL "C" PRESS CONTACTS IN MULTILAYER BOARD PER MIL-C-28859 WINCHESTER ELECTRONICS DIVISION OF LITTON SYSTEM, INC. MAIN STREET & HILLSIDE AVE. OAKVILLE, CT. 06779 T E S T REPORT 47 0 SIGNATURE FOR: WINCHESTER ELECTRONICS DIVISION LITTON SYSTEMS, INC

Contextual Info: SLE T> LITTON IND/LITTON SOLI] Litton • SS442GD DDDGS1D 7ÖG ■ L I T T Low N oise/M edium Power M icrow ave GaAs FET Electron Devices D-2503 Preliminary Specifications FEATURES ■ Noise Figure 3.5 ■ Gain a t NF 6.5 ■ 0.50 X 280 um Ti/Pt/Au G ate

Contextual Info: L I TT ON I N D / L I T T O N SO LI D SbE D Litton • 5 5 4 4 S D D O O D G S l b ITT « L I T T M edium Power M icrow ave GaAs FET Electron Devices D-3807 Preliminary Specifications Lett Side FET Right Side FET FEATURES ■ Output Power 25 ■ 1dB Power Gain 10 dB @ 8 g h z

Contextual Info: LITTON IND/LITTON SOLID SbE ]> • 5S44SDD 0GDG524 275 ■ LITT Litton LF6872 Solid State 1/4 W att, Low Distortion GaAs FET PRELIMINARY SPECIFICATIONS FEATURES ■ +24 dBm Typical Output Power @ 18GHz ■ 6 dB Typical Compressed Gain @ 18GHz ■ Low 2nd Harmonic Distortion

Contextual Info: LITTON IND/LITTON SOLID Litton 5bE D WÊ SS442DD □□□□SED b2T « L I T T Low-Distortion/Medium Power M icrowave GaAs FET Electron Devices D-6828 Preliminary Specifications FEATURES • O utput Power 19 dBm @ 18 GHz ■ 1dB Power Gain 7 dB @ 18 g h z

magnetron 2j42

Abstract: magnetron* -coaxial magnetron 65 kw 2j42 pulse magnetrons litton radar tube T740
Contextual Info: L'SZiVlS 11-00 14:19 Fron- T-740 P.05/06 CO A X IA L PU LSE M AGNETRON w i H '.vl / £ LITTON INDUSTRIES • ELECTRON TUBE DIVISION • SAN CARLOS, CALIFORNIA F-140 04-11-00 14:18 From- T-740 P.04/06 . j F-14Q COAXIAL PU LSE M AGNETEON 7 .5 K ilow atts M inim um Peak Power

UG-148

Abstract: c-band magnetron litton inand ELECTRON TUBE 10 UG-148B
Contextual Info: SENT BY: 10- 5-95 ;12:59PM ;LITTON ELECTRON DEV.- PULSE 708 208 2651;# 2/ 3 MAGNETRON 7156A 250 Kilowatts Minimum Peak Power Tunable Frequency 5450 to 5825 MHz This proven, long life, tunable pulse at C-band has recorded operational life magnetron in excess

S3V 82

Contextual Info: LITTON IND/LITTON SOLID SLE D • 55M42D0 0DDD52b 04fl « L I T T Ultra Low-Noise M icrowave GaAs FET D-0777 Electron Devices Preliminary Specifications 440 FEATURES 280 ■ Noise Figure 1.9 d B @ < 46 18 g h z ► Y77Ä ■ Gain a t NF 8 dB @ 18 GHz ' /}; ; ; ///A

TRANSISTOR A107

Contextual Info: LITTON IND/LITTON SOLID Linon SbE D • 5S4M200 DG0DS12 553 « L I T T Dual Gate Microwave GaAs FET Electron Devices D-2704 Preliminary Specifications FEATURES ■ MAG 18 dB @ 8 GHz ■ Noise Figure 2 .5 dB @ 8 Ghz ■ Gain at NF 13 dB @ 8 Ghz ■ Mixer, Switch, AGC, and Temperature

Contextual Info: LITTON IND/LITTON SOLID SbE D 5544200 ODDQMTb SÔD • LITT J Z - ([ ■ GUNN DIODES HIGH FREQUENCY 22 to 110 GHz FEATURES • • • • • • GaAs and InP Devices High Efficiency Low Package Parasitics High Reliability Low FM and AM Noise Good Power and Frequency Stability

Contextual Info: LITTON IND/LITTON SOLI» SbE » • 5544200 0000502 b04 ■ LITT GALLIUM ARSENIDE PULSED IMPATT DIODES 9251 Series • • • • • • 5-21 GHz High Peak Output Power High Efficiency— Typically 18-20% Burnout Resistant to Circuit Mismatches High Reliability— Greater than 106 hrs M TTF