102OC Search Results

Contextual Info: FFPF30UP20S 30 A, 200 V, Ultrafast Diode Features Description • Ultrafast Recovery trr = 50 ns @ IF = 30 A The FFPF30UP20S is a ultrafast diode with low forward voltage drop. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other

TA09909

Abstract: RURG5060
Contextual Info: RURG5060 Data Sheet January 2000 File Number 3211.3 50A, 600V Ultrafast Diode Features The RURG5060 is an ultrafast diode with soft recovery characteristics trr < 65ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial

HX8340B

Abstract: HX8340-B mx 362-0
Contextual Info: DATA SHEET DOC No. HX8340-B(N -DS ) HX8340-B(N) 176RGB x 220 dot, 262k color, with internal GRAM, TFT Mobile Single Chip Driver Preliminary version 01 October, 2007 HX8340-B(N) 176RGB x 220 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver

Contextual Info: 89HPES24T6 Data Sheet 24-Lane 6-Port PCI Express Switch Device Overview The 89HPES24T6 is a member of the IDT PRECISE family of PCI Express® switching solutions. The PES24T6 is a 24-lane, 6-port peripheral chip that performs PCI Express packet switching with a feature set

RURU5060

Contextual Info: RURU5060 Data Sheet January 2000 File Number 2940.3 50A, 600V Ultrafast Diode Features The RURU5060 is an ultrafast diode with soft recovery characteristics trr < 65ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial

fiber TRANSCEIVER CIRCUIT DIAGRAM rs232

Abstract: HFRD HFRD-14 Honeywell DBM 01 PCB PL-SLR-00-SG3-C3 fiber-optic photodiode for 850nm HFRD-15 photodiode for fiber-optic sensor 850 nm ULM Photonics DS1859
Contextual Info: Reference Design: HFRD-14.0 Rev.11;11/08 REFERENCE DESIGN Multirate 1Gbps to 4.25Gbps 850nm Small Form-Factor Pluggable (SFP) Transceiver Maxim Integrated Products Reference Design: Multirate (1Gbps to 4.25Gbps) 850nm SFP Transceiver Table of Contents 1. Overview. 2

SFP layout design

Abstract: 1367073 1367073-1 SLT2170-LN SLT2170-xN rd003 gerber file of inverter DS1858 DS3900 MAX3735
Contextual Info: Reference Design: HFRD-03.0 Rev.7; 11/08 As of July, 2008 this reference design board is no longer available. Gerber files and schematics are available upon request. REFERENCE DESIGN Multi-Rate 1Gbps – 2.7Gbps Small Form Factor Pluggable (SFP) Transmitter

Contextual Info: FDB5800 N-Channel Logic Level PowerTrench MOSFET 60 V, 80 A, 6 mΩ Features Description • RDS on = 4.6 mΩ (Typ.), VGS = 10 V, ID = 80 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state

AN167

Abstract: DS1847 DS1848
Contextual Info: Application Note 167 Considerations for the DS1847/1848 Look-Up Tables www.maxim-ic.com INTRODUCTION The DS1847 and DS1848 are digitally controlled resistors. The look-up tables in these parts are used to store Resistor positions that discretely compensate for the user’s application temperature dependence across the

Contextual Info: FFH30S60S 30 A, 600 V STEALTH II Diode Features Description • Stealth Recovery, trr = 40 ns @ IF = 30 A • Max. Forward Voltage, VF = 2.6 V (@ TC = 25°C) The FFH30S60S is STEALTH™ II diode with soft recovery characteristics using silicon nitride passivated ion-implanted

FDB5800

Contextual Info: FDB5800 N-Channel Logic Level PowerTrench MOSFET 60V, 80A, 7mΩ Features Applications „ rDS ON = 5.5mΩ (Typ.), VGS = 5V, ID = 80A „ Motor/ Body Load Control „ High performance trench technology for extermely low Rdson „ ABS Systems „ Power Train Management

SLT2170-LN

Abstract: HFRD-04 SLT2170-xN 1367073 photodiod modules DS1859 MAX3735A MAX3744 MAX3748 1367073-1
Contextual Info: Reference Design: HFRD-04.0 Rev. 7: 11/08 As of July, 2008 this reference design board is no longer available. Gerber files and schematics are available upon request. REFERENCE DESIGN 2.7Gbps, 1310nm Small Form Factor Pluggable SFP Transceiver Maxim Integrated Products

FDC6020C_F077

Abstract: FDC6020C
Contextual Info: FDC6020C Complementary PowerTrench MOSFET General Description Features These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior

N-Channel 2.5V

Abstract: fdc6000nz
Contextual Info: FDC6000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate

HX8369

Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
Contextual Info: DOC No. HX8369-A00-DS HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver Version 02 October, 2010 HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents October, 2010

F30S60S

Abstract: FFH30S60S
Contextual Info: FFH30S60S tm 30A, 600V, STEALTH II Diode Features • Stealth Recovery, Trr = 40 ns @ IF = 30 A • Max Forward Voltage, VF = 2.6 V (@ TC = 25°C) The FFH30S60S is STEALTH™ II Diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted

TA9909

Abstract: rurg5060 RURG5050 RURG5040
Contextual Info: S E M I C O N D U C T O R RURG5040, RURG5050, RURG5060 50A, 400V - 600V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . . .<65ns JEDEC STYLE 2 LEAD TO-247 o • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175 C

F30S60S

Contextual Info: FFH30S60S tm Stealth 2 Rectifier Features 30A, 600V Stealth 2 Rectifier • High Speed Switching, rrt < 40ns @ IF = 30A • High Reverse Voltage and High Reliability The FFH30S60S is stealth2 rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial

1e31a

Abstract: 1E30A 1E32A 1U-25 CLM2815 CLM2815AAT CLM2815AAT-X CLM2815AAU CLM2815AAU-X CLM2815AT
Contextual Info: 1.5A Low Dropout Voltage Regulator Adjustable & Fixed Output Fast Response CORPORATION CLM2815 FEATURES • • • • • • • • PRODUCT DESCRIPTION Adjustable Output . . . . . . . . . . . . . . . . . . . Down To 1.2V Fixed Output Voltages. . . . . . . . . . . . . . 1.5, 2.5, 3.3, 5.0V

Contextual Info: RURG5060 November 2013 Data Sheet 50 A, 600 V, Ultrafast Diode Features • Ultrafast Recovery trr = 75 ns @ IF = 50 A • Max Forward Voltage, VF = 1.6 V (@ TC = 25°C) Description • 600 V Reverse Voltage and High Reliability The RURG5060 is an ultrafast diode with low forward

fdb fairchild

Abstract: FDB5800
Contextual Info: FDB5800 N-Channel Logic Level PowerTrench MOSFET 60V, 80A, 7mΩ Features Applications „ rDS ON = 5.5mΩ (Typ.), VGS = 5V, ID = 80A „ DC-DC Converters and Off-Line UPS „ High performance trench technology for extermely low Rdson „ Low Gate Charge „ High power and current handling capability

TA09909

Abstract: RURG5060
Contextual Info: RURG5060 Data Sheet Title UR 060 bt A, 0V rafa ode utho eyrds A, 0V rafa wer pes, wer itch File Number 3211.3 50A, 600V Ultrafast Diode Features The RURG5060 is an ultrafast diode with soft recovery characteristics trr < 65ns). It has low forward voltage drop

fdb5800

Contextual Info: FDB5800 N-Channel Logic Level PowerTrench MOSFET 60V, 80A, 7mΩ Features Applications „ rDS ON = 5.5mΩ (Typ.), VGS = 5V, ID = 80A „ Motor Load Control „ High performance trench technology for extermely low Rdson „ DC-DC Converters and Off-Line UPS

FDC6000NZ

Abstract: c2021
Contextual Info: FDC6000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate