102N02 Search Results

102N02 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
102N02		Directed Energy	DE-SERIES FAST POWER MOSFET	Original	PDF	35.87KB	1

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IXYS Corporation DE150-102N02A RF MOSFET DE150
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DE150-102N02A	Tube			1	1 $24.51 10 $24.51 100 $15.22 1000 $14.64 10000 $14.64	Buy Now
TDK Electronics B82724J2102N021 CMC 39MH 1A 2LN TH
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DigiKey	B82724J2102N021	Tray			480	1 - 10 - 100 - 1000 $1.86 10000 $1.86	Buy Now
TDK Electronics B82722A2102N020 CMC 15MH 1A 2LN TH
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DigiKey	B82722A2102N020	Tray			600	1 - 10 - 100 - 1000 $1.40 10000 $1.40	Buy Now
TDK Electronics B82722J2102N020 CMC 15MH 1A 2LN TH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	B82722J2102N020	Tray			540	1 - 10 - 100 - 1000 $1.41 10000 $1.41	Buy Now
TDK Electronics B82724A2102N021 CMC 39MH 1A 2LN TH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	B82724A2102N021	Tray			600	1 - 10 - 100 - 1000 $1.92 10000 $1.92	Buy Now

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102N02 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: DE150-102N02A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient	Original	DE150-102N02A 500Pf	PDF
200W MOSFET POWER AMP Abstract: nec 2401 DE150-102N02A 150P rf power mosfet 0/DE150-102N02A Contextual Info: DE150-102N02A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient	Original	DE150-102N02A 500Pf 200W MOSFET POWER AMP nec 2401 DE150-102N02A 150P rf power mosfet 0/DE150-102N02A	PDF
nec 2401 Abstract: DE150-102N02A QGS 80W 30 ohm 150P Directed Energy spice Contextual Info: Directed Energy, Inc. An DE150-102N02A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR	Original	DE150-102N02A 500Pf nec 2401 DE150-102N02A QGS 80W 30 ohm 150P Directed Energy spice	PDF
102N02 Abstract: DE-150 Contextual Info: PRELIMINARY SPECIFICATIONS DE-150 102N02 1.4A, 1000V, 11Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com	Original	DE-150 102N02 150oC 102N02	PDF
high power rf 10kW Abstract: HF power amplifier 1000W DE-275 RF Amplifiers 101N09 hf amplifier 1000w DE-150 3RH1140-1AD00 101N30 102N02 Contextual Info: T H E P U L S E O F T H E F U T U R E DE-SERIES FAST POWER MOSFETS DE-150 SERIES The DE-150 Series are the lowest power devices in the DE-Series family. However, their speed and frequency are the highest. The upper operational frequency of the DE-150 Series is approximately 110MHz. The switching speed of the device family is on the order	Original	DE-150 DE-150 110MHz. DE-375X2 102N20 501N40 high power rf 10kW HF power amplifier 1000W DE-275 RF Amplifiers 101N09 hf amplifier 1000w 3RH1140-1AD00 101N30 102N02	PDF