10211B Search Results

Contextual Info: CY7C1021BN 10211BN 1-Mbit 64K x 16 Static RAM Functional Description[1] Features • Temperature Ranges The CY7C1021BN/10211BN is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly

10192B

Abstract: 50 ohm resistor ecl 10212
Contextual Info: _ PROPAGATION DELAY WAVEFORMS @ +25°C OUTPUT VOLTAGES V1 = VT Vo = VT - RL X 16mA TYP OUTPUT STATES Enabled: Qo = V|N, Q0 = V|N Disabled: lo u T ” OmA V IN - N. ^50% -1 .6 9 V t — t - » 80% RECOMMENDED TERMINATION VOLTAGE {-5 0 %

7C1021B-15

Abstract: 10211B CY7C1021B-12VC CY7C10211B CY7C1021B
Contextual Info: 0211B CY7C1021B/ 10211B 64K x 16 Static RAM Features • High speed — tAA = 10, 12, 15 ns • CMOS for optimum speed/power • Low active power — 825 mW max. • Automatic power-down when deselected • Independent control of upper and lower bits

CY7C10211B

Abstract: CY7C1021B
Contextual Info: CY7C1021B 10211B 1-Mbit 64K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0

Contextual Info: 10192B.F PIN CONFIGURATION FEATURES OUTPUT VOLTAGE OUTPUT CURRENT INPUTS E 1 IO O IO O •Capable of party line operation •Differential or single-ended mode ■16mA current mode outputs •3-logic-atate complementary outputs •Drives long lines ■Excellent noise immunity

CY7C1021B-12ZXC

Abstract: CY7C10211B CY7C1021B CY7C1021B-12VXI
Contextual Info: CY7C1021B 10211B 1-Mbit 64K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0

Contextual Info: 10211B CY7C1021B/ 10211B 64K x 16 Static RAM Features • High speed — tAA = 10, 12, 15 ns • CMOS for optimum speed/power • Low active power — 825 mW max. • Automatic power-down when deselected • Independent control of upper and lower bits