CY7C1021B Search Results

Contextual Info: CY7C1021BNV33 64 K x 16 Static RAM 64 K × 16 Static RAM Features Functional Description The CY7C1021BNV33[1] is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces power

CY7C1021BN-15VI

Abstract: CY7C1021BN
Contextual Info: CY7C1021BN CY7C10211BN 1-Mbit 64K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0

CY7C1021BN

Contextual Info: CY7C1021BN CY7C10211BN 1-Mbit 64K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0

Contextual Info: CY7C1021D PRELIMINARY 1-Mbit 64K x 16 Static RAM Features automatic power-down feature that significantly reduces power consumption when deselected. • Pin- and function-compatible with CY7C1021B • High speed — tAA = 10 ns • CMOS for optimum speed/power

Contextual Info: CY7C1021D 1-Mbit 64K x 16 Static RAM Features • Pin-and function-compatible with CY7C1021B • High speed — tAA = 10 ns • Low active power — ICC = 60 mA @ 10 ns • Low CMOS Standby Power • • • • • — ISB2 = 3 mA 2.0V Data Retention Automatic power-down when deselected

CY7C1021BN

Contextual Info: CY7C1021BN, CY7C10211BN 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features • Functional Description Temperature ranges ❐ Commercial: 0 °C to 70 °C ❐ Industrial: –40 °C to 85 °C ❐ Automotive-A: –40 °C to 85 °C ❐ Automotive-E: –40 °C to 125 °C

CY7C1021BV

Abstract: CY7C1021BV33
Contextual Info: CY7C1021BV33 CY7C1021BV33 64K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0

CY7C1021BNV33

Abstract: CY7C1021BNV33L-15BAI CY7C1021BNV33L-15ZXI
Contextual Info: CY7C1021BNV33 64 K x 16 Static RAM 64 K × 16 Static RAM Features Functional Description The CY7C1021BNV33[1] is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces power

CY7C1021B-15ZSXE

Abstract: CY7C1021B-12ZXC CY7C1021B
Contextual Info: CY7C1021B 1-Mbit 64K x 16 Static RAM Features automatic power-down feature that significantly reduces power consumption when deselected. • Temperature Ranges Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable

CY7C1021BV33

Abstract: CY7C1021CV33
Contextual Info: CY7C1021CV33 64K x 16 Static RAM Features • Pin- and function-compatible with CY7C1021BV33 • High speed — tAA = 8, 10, 12, and 15 ns • CMOS for optimum speed/power • Low active power — 360 mW max. • Data retention at 2.0V • Automatic power-down when deselected

Contextual Info: CY7C1021D 1-Mbit 64K x 16 Static RAM Features Functional Description • Temperature Ranges: ❐ Industrial: –40°C to 85°C ❐ Automotive-A: –40°C to 85°C ❐ Automotive-E: –40°C to 125°C ■ Pin and Function Compatible with CY7C1021B ■ High Speed

15BAI

Contextual Info: 33 CY7C1021BV33 PRELIMINARY 64K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O 1 through I/O8), is written into the location specified on the address pins (A0

CY7C1021D-10ZSXI

Abstract: CY7C1021B CY7C1021D CY7C1021D-10VXI
Contextual Info: CY7C1021D 1-Mbit 64K x 16 Static RAM Functional Description [1] Features • Pin-and function-compatible with CY7C1021B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns The CY7C1021D is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an

AN1064

Abstract: CY7C1021B CY7C1021D
Contextual Info: CY7C1021D 1-Mbit 64K x 16 Static RAM Features Functional Description • Temperature Ranges: ❐ Industrial: –40°C to 85°C ❐ Automotive-A: –40°C to 85°C ❐ Automotive-E: –40°C to 125°C ■ Pin and Function Compatible with CY7C1021B ■ High Speed

CY7C10211B

Abstract: CY7C1021B
Contextual Info: CY7C1021B CY7C10211B 1-Mbit 64K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0

CY7C1021B

Abstract: CY7C1021B-10VC
Contextual Info: CY7C1021B CY7C1021B 64K x 16 Static RAM Features BLE is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0 through A15). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O9 through I/O16) is written into the location

CY7C1021CV33-10ZC

Contextual Info: CY7C1021CV33 64K x 16 Static RAM Features • Pin- and function-compatible with CY7C1021BV33 • High speed — tAA = 8, 10, 12, and 15 ns • CMOS for optimum speed/power • Low active power — 360 mW max. • Data retention at 2.0V • Automatic power-down when deselected

Contextual Info: CY7C1021CV33 64K x 16 Static RAM Features • Pin- and function-compatible with CY7C1021BV33 • High speed — tAA = 8, 10, 12, and 15 ns • CMOS for optimum speed/power • Low active power — 360 mW max. • Data retention at 2.0V • Automatic power-down when deselected

Contextual Info: CY7C1021BN CY7C10211BN 1-Mbit 64K x 16 Static RAM Functional Description[1] Features • Temperature Ranges The CY7C1021BN/10211BN is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly

Contextual Info: CY7C1021BN/CY7C10211BN 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features • Functional Description Temperature ranges ❐ Commercial: 0 °C to 70 °C ❐ Industrial: –40 °C to 85 °C ❐ Automotive-A: –40 °C to 85 °C ❐ Automotive-E: –40 °C to 125 °C

CY7C1021BV33

Contextual Info: 021BV33 CY7C1021BV33 64K x 16 Static RAM Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0

CY7C1021B-12ZXC

Abstract: CY7C10211B CY7C1021B CY7C1021B-12VXI
Contextual Info: CY7C1021B CY7C10211B 1-Mbit 64K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0

CY7C1021BV33

Contextual Info: 021BV33 CY7C1021BV33 64K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0

CY7C1021B-12ZXC

Abstract: CY7C1021B
Contextual Info: CY7C1021B 1-Mbit 64K x 16 Static RAM Features automatic power-down feature that significantly reduces power consumption when deselected. • Temperature Ranges Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable