102002 Search Results

sma connector panel

Abstract: 102002 PA10 2160 transistor
Contextual Info: PRELIMINARY PTF 102002* GOLDMOS Field Effect Transistor 90 Watts, 2110-2170 MHz Description • • Typical WCDMA Perfomance @ 2170 MHz - 3GPP 3.2, 3 DPCH, CCDF 9.5:1 dB @ .01% Peak/Avg Ratio - Output Power = 11.5 Watts - Efficiency = 14% - Adjacent Channel Power =

P0100-01

Abstract: FM24653 ISO-14001 S3C84BB TB84BB S3F84
Contextual Info: 21-S3-C84BB/F84BB-102002 USER'S MANUAL S3C84BB/F84BB 8-Bit CMOS Microcontroller Revision 1 S3C84BB/F84BB 8-BIT CMOS MICROCONTROLLERS USER'S MANUAL Revision 1 Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at

capacitor 0.1uf DIGIKEY

Abstract: 2160 transistor sma connector panel capacitor siemens 4700 35 Ericsson 3GPP
Contextual Info: PRELIMINARY PTF 102002* GOLDMOS Field Effect Transistor 90 Watts, 2110-2170 MHz Description • • Typical WCDMA Perfomance @ 2170 MHz - 3GPP 3.2, 3 DPCH, CCDF 9.5:1 dB @ .01% Peak/Avg Ratio - Output Power = 11.5 Watts - Efficiency = 14% - Adjacent Channel Power =

Contextual Info: PTF 102002 LDMOS RF Power Field Effect Transistor 90 Watts, 2110–2170 MHz Description Key Features The PTF 102002 is an internally matched 90–watt GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This LDMOS device typically operates at 47% efficiency at P–1dB with a

Contextual Info: 13 12 10 PART NUMBER ENGINEERING NO. LENGTH 1200060156 1500060159 1300060162 1500060168 102002A01F050 102002A01F060 102002A01F120 102002A01F2Q0 3' +1.75 - 0 [ 0.9M +22.5 - 0 ] 6' +2.19 - 0 [ 1.8M +55.6 - 0 ] 12' +3.50 - 0 [ 3.7M +88.9 - 0 ] 20' +6.50 - 0 [ 6.1M +165.1 - 0 ]

1000 watts power amp circuit diagram

Abstract: 2160 transistor
Contextual Info: PRELIMINARY GOLDMOS Field Effect Transistor 90 Watts, 2110-2170 MHz PTF 102002* Description Key Features The PTF 102002 is an internally matched 90–watt GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This LDMOS device typically operates at 40% efficiency at P-1dB with a

DS21825

Abstract: AN951 DS00951 MCP6031 PIC32 dspic demo board dspic schematic PNZ334
Contextual Info: MCP6031 Photodiode PICtail Plus Demo Board User’s Guide 2008 Microchip Technology Inc. DS51763A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

MS1006

Abstract: HF SSB APPLICATIONS
Contextual Info: MS1006 RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW DESCRIPTION KEY FEATURES The MS1006 is a 50 V Class AB epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. This device utilizes emitter ballasting for improved ruggedness and

spearnet

Contextual Info: Qwik Connect n JANUARY 2015 n VOLUME 19 IN THIS ISSUE: NEW INTERCONNECT T E C H N O L O G Y FOR MODERN SOLDIER SYSTEMS n NUMBER 1 Cover: Sgt. 1st Class, Maria Young Photo Credit: Pfc Bryan Willis GLENAIR NEW INTERCONNECT T E C H N O L O G Y FOR MODERN SOLDIER SYSTEMS

Contextual Info: HIGH-PERFORMANCE CONDUIT SYSTEMS FO R IN TE RC O N N E C T AP P L ICATIO NS APRIL 2012 CABLE AND CONDUIT A S S E M B LY C A P A B I L I T I E S TERMINATED, TESTED, AND READY FOR USE GLENAIR, INC. • 1211 Air Way • Glendale, CA 91201-2497 • Tel: 818-247-6000 • Email: sales@glenair.com • www.glenair.com

Out of this World Interconnect Solutions

Abstract: 232-100-H0 VG96929 232-100-H7 232-100-H2 232-100-H5
Contextual Info: Qwik Connect Out of This World INTERCONNECT SOLUTIONS GLENAIR n A p ril 2 0 1 2 n VOLUME 16 n NUMBER 2 Out of This World INTERCONNECT SOLUTIONS TABLE OF Contents Contacts, Wires and Cables • SAE-AS39029 Crimp Contacts • High Performance Shielded Contacts

Contextual Info: MS1262 RF & MICROWAVE TRANSISTOR UHF MOBILE APPLICATIONS Features • • • • • • 512 MHz 12.5 VOLTS POUT = 15 W MINIMUM GP = 7.8 dB INPUT MATCHED COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1262 is a NPN silicon RF power transistor designed for

vhf power transistor 50W

Abstract: transistor rf vhf
Contextual Info: MS1507 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS Features • • • • • 160 MHz 13.6 VOLTS POUT = 40 WATTS GP = 9.0 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1507 is a 13.6 volt Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. The MS1507

Contextual Info: MS1491 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS Features • • • • • • 470 MHz 12.5 VOLTS POUT = 45 WATTS GP = 5.2 dB MINIMUM GOLD METALIZATION COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1491 is a 12.5 volt silicon NPN transistor designed

Contextual Info: MS1008 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • 30 MHz 50 VOLTS IMD = –30 dB POUT = 150 WATTS GP = 14 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1007 is a 50V epitaxial silicon NPN planar transistor

Contextual Info: MS1553 RF & MICROWAVE TRANSISTORS 800 / 900 MHz APPLICATIONS Features • • • • • • 900 MHz 24 VOLTS POUT = 60 WATTS GP = 7.0 dB MINIMUM INPUT AND OUTPUT MATCHED COMMON BASE CONFIGURATION DESCRIPTION: The MS1553 is a 28V Class C epitaxial silicon NPN planar

DS22075

Contextual Info: TO220-5 / TO263-5 Voltage Regulator Evaluation Board User’s Guide 2009 Microchip Technology Inc. DS51817A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

Contextual Info: MS1551 RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS Features • • • • • • 850-960 MHz 24 VOLTS POUT = 60 WATTS GP = 7.0 dB MINIMUM DOUBLE STEP INPUT/OUTPUT MATCH COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1551 is designed for 900 MHz cellular radio base station

80083

Contextual Info: ISSUE 4 Installation Instructions for the 26PC Series Pressure Sensors WARNING PERSONAL INJURY DO NOT USE these products as safety or emergency stop devices, or in any other application where failure of the product could result in personal injury. Failure to comply with these instructions

00ATEX2061

Contextual Info: SSB_D001-D003_GB 17.10.2003 8:10 Uhr Seite D.1 Terminals / Screw connection Overview / W-Series D.2 - D.3 Feed-through terminals Standard design Compact design D.4 - D.11 D.12 - D.17 PE terminals Standard design Compact design D.18 - D.23 D.24 - D.27 Terminals

a1718

Abstract: Brad Harrison k0318 CC3030A48M010 B1318 CC4030A48M010 600va ups 444030A10M020 awm style 20233 1R4000A20A120
Contextual Info: BRAD HARRISON PASSIVE MEDIA For over 35 years, Brad Harrison products have been the standard for innovation and superior engineering in quick disconnect systems. What began as a safe, fast and efficient alternative to hard wiring has expanded into industry’s broadest line of quick-disconnect solutions,

MCP2150

Abstract: PIC32 uart example rs232 MCP2155 liteon keyboard notebook AN941 PIC32 PICC-18 PIC C Programming sound echo SIPEX Selection Guide programmer schematic ICD2
Contextual Info: MCP2150 Developer’s Board User’s Guide 2009 Microchip Technology Inc. DS51869A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

KEMA98ATEX1683U

Contextual Info: Product catalogue | Terminals | Screwing technology | W-series modular terminals | Modular feed-through terminals | WStandard | 2,5 mm² General ordering data Order No. Part designation Version EAN Qty. Product notes Note, ordering data Note, technical data

Contextual Info: MCP73213 Dual-Cell Li-Ion / Li-Polymer Battery Charge Management Controller with Input Overvoltage Protection Features Description • Complete Linear Charge Management Controller: - Integrated Input Overvoltage Protection - Integrated Pass Transistor - Integrated Current Sense