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    IL102

    Abstract: SHC298 SHC298A SHC298AM SHC298AJP SHC298JP SHC298JU
    Contextual Info: SHC298 SHC298A B U R R -B R O W N j • B B B • LESS THAN 1f pS ACQUISITION TIME • WIDEBAND NOISE LESS THAN 20pVrms • RELIABLE MONOLITHIC CONSTRUCTION • 101oO INPUT RESISTANCE • TTL/CMOS-COMPATIBLE LOGIC INPUT M ode C o n tro l S /H ) Input O ffset A djust


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    shc298shc298a12-bit20pvrms+6101ooil102shc298amshc298ajpshc298jpshc298ju PDF

    Contextual Info: A M D il ADVANCE INFORM ATIO N M i i .i i n - i i i i n i i in.i i i « Am29DL162C/Am29DL163C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS A R C H ITEC TU R A L AD VA N TA G ES


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    am29dl162c/am29dl163c16-bit29dl162c/am29dl163c PDF

    Contextual Info: COMPONENTS B U R R -B R O W N H INA258WG/883B INA258WL/883B INA2S8WQ INA258WL INA258VG/883B INA2S8VL/883B INA258VG INA258VL INA258UG/883B ÌNA258UL/883B INA258UG INA2S8UL INA258/883B H INA258/883B SER IES MODEL NUM BERS: REVISIO N B JAN U ARY, 1989 Very-High Accuracy Military


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    ina258wg/883bina258wl/883bina258wlina258vg/883b+6ina2s8vl/883bina258vgina258vlina258ug/883bna258ul/883bina258ug PDF

    80386DXL

    Abstract: WT 7525 80286 microprocessor paging mechanism microprocessor 80288 INTEL 386DX Audi b5 8086 microprocessor pin description interfacing of memory devices with 80286 power module hd 110M TAG 8816
    Contextual Info: ADVANCE] MICRO D E V I C E S 4ÖE D • G 2 57 52 5 G 0 4 1 3 0 4 5 ■ A U D I T - ^ - n -y \ Am386 DXL Advanced Micro Devices High-Performance, Low-Power, 32-Bit Microprocessor DISTINCTIVE CHARACTERISTICS ■ Ideal for portable PCs -True static design for long battery life


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    02s75bsam38632-bit386dx+16i386sx132-pin20-mhz16-bitbs16toam386dxl80386dxlwt 752580286 microprocessor paging mechanismmicroprocessor 80288intel 386dxaudi b58086 microprocessor pin descriptioninterfacing of memory devices with 80286power module hd 110mtag 8816 PDF

    OAOLP2

    Abstract: temperature digital display JUMO Lan M smd transistor 1p7 bti ml-2 transistor SMD 1p6 transistor DK qe smd edto 116.4 8052ah basic toba 639 270645
    Contextual Info: MCS@51 MICROCONTROLLER FAMILY USER’S MANUAL ORDER NO.: 272383-002 FEBRUARY 1994 Intel Corporation makes no warrsnfy for the uee of ite products and assumes no responsibility for any ewors which may appear in this document nor does it make a commitment to update the information contained herein.


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    15consecutiveoaolp2temperature digital display jumo lan msmd transistor 1p7+7bti ml-2transistor smd 1p6transistor dk qe smdedto 116.48052ah basictoba 639270645 PDF

    pc-24-450

    Contextual Info: P.C. Power Transformers— Concentric or Split Bobbin & FORM-TRAN Construction STYLE B NO CHANNEL FRAME PAR ALLEL CO N N ECTED SERIES CO N N EC TED STYLE E CHANNEL FRAME DPC-8 PINS C O N N EC TED CO N N ECTED R ECO M M EN D ED P.C. HOLE DIA = .052 HOW TO ORDER


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    115/230vpc-24-450 PDF

    SILVER MICA capacitor high voltage

    Abstract: 2091J Silver mica capacitor 1000pF 100V ARCO Mica capacitors Arco mica capacitor
    Contextual Info: 72E D • 0=500^72 0 0 0 0 7 0 1 74^ ■ _ UC SERIES CHIP MICA CAPACITORS A small package with . . . SUPERIOR HIGH FREQUENCY CHARACTERISTICS IN A CH IP. Natural mica exhibits superior and stable electrical charac­ teristics as well as excellent high frequency performance.


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    100wv500wvsilver mica capacitor high voltage2091j+3silver mica capacitor 1000pf 100varco mica capacitorsarco mica capacitor PDF

    Contextual Info: ADVANCE INFORMATION AMDZ1 Am29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • — Data can be continuously read from one bank w hile executing erase/program functions in other bank.


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    am29dl16xc16-bit20-yearfbc048+240-pin29dl16xc PDF

    Contextual Info: Data Sheet June 1999 microelectronics group Lucent Technologies Bell Labs Innovations ORCA Series 3C and 3T Field-Programmable Gate Arrays Features • High-performance, cost-effective, 0.35 pm OR3C and 0.3 pm (OR3T) 4-level metal technology, (4- or 5-input


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    gd3t75fci PDF

    SHC298A

    Contextual Info: SHC298 SHC298A B U R R -B R O W N | Monolithic SAMPLE/HOLD AMPLIFIER Offset Adjust These sam ple/holds will operate over a wide supply voltage ranging from ±5V to ±18V with very little change in performance. A separate Offset Adjust pin is used to adjust the offset in either the Sample or


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    shc298shc298ashc298amshc298jp+2shc298jushc298ajp PDF

    JESD-95

    Contextual Info: ADVANCE INFORMATION AMDZ1 Am29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank w hile


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    am29dl16xc16-bit29dl16xcjesd-95 PDF

    Contextual Info: PR ELIM IN ARY A M D il Am29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS A R C H ITEC TU R A L A D VANTAG ES • ■ ■ Sim ultaneous R ead/W rite o perations — Data can be continuously read from one bank w hile


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    am29dl16xc16-bit29dl16xc PDF

    BR16 switch transistors

    Abstract: Lucent wifi PB11D R2C15 PTC 8750 R5C13 5s805 W847 R12G5
    Contextual Info: microelectronics Preliminary Data Sheet November 1997 group L u c e n t T t o c h n û lo a ie s Bell Late Innovations ORG&Q R3Cxx 5 V and OR3Txxx (3.3 V) Series Field-Programmable Gale Arrays Features • High-performance, cost-effective, 0.35 nm 4-level


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    16-bitp65900ds97-282fpgabr16 switch transistors+8lucent wifipb11dr2c15ptc 8750r5c135s805w847r12g5 PDF

    LM1808

    Abstract: LM1800 TRANSISTOR LM371 ks2 6k MC7812CP LM3026 SN52101AJ transistor bf 175 LM170 Germanium drift transistor
    Contextual Info: Edge Index by Product Family Here is the new Linear Data Handbook from National. It gives complete specifications for devices useful in building nearly all types of electronic systems, from communications and consumer oriented circuits to precision instrumentation and computer designs.


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    lm741mil-m-38510m-38510/10101bcc+11l-m-38510lm1808lm1800transistor lm371ks2 6kmc7812cplm3026sn52101ajtransistor bf 175lm170germanium drift transistor PDF

    Contextual Info: PRELIMINARY A M D il Am29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ ■ 20 Year data retention at 125°C


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    am29dl16xc16-bitdl16229dl16xc PDF

    TOSHIBA TLCS-870 SPEC

    Abstract: pt 2097
    Contextual Info: TOSHIBA 8 Bit Microcontroller 870C Series TMP86CH47AUG TOSHIBA CORPORATION TMP86CH47AUG The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No


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    tmp86ch47augtoshiba tlcs-870 specpt 2097 PDF

    Contextual Info: Preliminary Data Sheet, Rev. 1 September 1998 m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations ORCA Series 3 Field-Programmable Gate Arrays Features • High-performance, cost-effective, 0.35 OR3C and 0.3 urn (OR3T) 4-level metal technology, with a migra­


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    208-pin240-pin256-pin352-pin+4432-pin600-pinps208ps240 PDF

    6N0 953 235

    Contextual Info: Preliminary Data Sheet microelectronics group Lucent Technologies Bell Labs Innovations ORCA OR3Cxx 5 V and OR3Txxx (3.3 V) Series Field-Programmable Gate Arrays Features • High-performance, cost-effective, 0.35 nm 4-level metal technology, with a migration plan to 0.25 urn


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    16-bit208-pin240-pin256-pin+7352-pin432-pin600-pinps208ps240ba2566n0 953 235 PDF

    Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS NT nichicon mm Screw Term inal Type, W ide Tem perature Range series High Ripple Client • Load life of 5.000 hours {2,000 hours for 10-250V application of ripple current at + 105C. • Extended voltage range from 10V up to 450V.


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    0-250vleakage70_90x19090x170+490x22090x23093x25000x220 PDF

    AMD marking CODE flash AM29DL

    Abstract: 29DL163
    Contextual Info: A D V A N C E IN F O R M A T IO N AMD* Am29DL162C/Am29DL163C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • ■ ■ Simultaneous Read/Write operations


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    am29dl162c/am29dl163c16-bit29dl162c/am29dl163c+2amd marking code flash am29dl29dl163 PDF

    Contextual Info: in te i 80C186EC/80C188EC AND 80L186EC/80L188EC 16-BIT HIGH-INTEGRATION EMBEDDED PROCESSORS • Fully Static Operation ■ True CMOS Inputs and Outputs ■ —40°C to + 85°C Operating Temperature Range Integrated Feature Set: — Low-Power, Static, Enhanced 8086


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    80c186ec/80c188ec80l186ec/80l188ec16-bit32-bit+480c186ec/188ec80l186ec/188ec80c186ec/80l186ec0002h PDF