1013N Search Results

Contextual Info: 10NY I_ 1013N 1.7 to 2.0 GHz Low Noise Amplifier/Down Conversion Mixer Description SSOP-16P-L01 Plastic The C X G 1013N is a low noise a m p lifie r/d o w n conversion mixer MMIC,designed using the Sony's GaAs J-FET process. Features • Low noise

AD545

Contextual Info: A N A LO G D E V IC E S FEATURES Low Offset Voltage: O.SmV max AD545AL 0.25mV max (AD545AM) Low Offset Voltage Drift: 5|i.V/°C max (AD545AL), 3(iV/°C max (AD545AM) Low Power: 1.5mA max Low Bias Current: 1pA max (AD545AK, L, M) Low Noise: 3|iV p-p, 0.1Hz to 10Hz

RASCO

Contextual Info: I I I / I \ A dvanced 1 L inear ALD1103 D e v ic e s , In c . DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1103 is a monolithic dual N-channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These

AN-7505

Abstract: fairchild low power transistor 1977
Contextual Info: Improved IGBTs with Fast Switching Speed And High-Current Capability Application Note December 1993 AN-7505 Abstract Title N86 bt mpro d BTs h t itch eed d ghrt paty utho eyrds terrpoon, minctor, er ) OCI O frk Conventional vertical power MOSFETs are limited at high

Burr Brown 3510am

Abstract: ner eN8 capacitor 3421J A5 GNC mosfet OPA103 OPA104 TF 6221 HEN LED display LOG100 3510CM Burr Brown OPA Application Reference
Contextual Info: BURR-BROWN Internatlenal Airport Industrial Park - P.0. Box 11400 - Tucson. Arizona B5734 Tel [602 746-1111 - TW X: 910-952-1111 - Cable: BBRCORP - Telex: 66-6491 PR O D U C T DATA BOOK The information in this publication has been carefully checked and is believed to be reliable; however, no responsibility is assumed for

dht12

Contextual Info: 1 .O utline QIP-100E Note that the package is a ceramic package for ES Engineering Sample . The index on 1-pin in the flat-type ceramic package is as shown in Fig.1. The outline dimensions also differ from the plastic package so refer to the outline dimension drawing (ceramic).

HSN-3000

Contextual Info: MAXWELL LABS IN C / S-CUBED 37E D 507=1721 HMnaauL 0000042 1 SCUB - 65-13 S-CUBED Division RADIATION HARDENED HYBRID NUCLEAR EVENT DETECTOR Model HSN-3000 FEATURES • Detects ionizing radiation pulses • 100% tested/certified detection threshold level • Adjustable circumvention period

HSN-1000F

Contextual Info: MAXWELL LABS IN C / S-CUBED 37E D 507=1751 Q0Q0G4Q S H S C U B T -6 5 'íZ S-CUBED Division RADIATION HARDENED HYBRID NUCLEAR EVENT DETECTOR Model HSN-1000 FEATURES • Detects ionizing radiation pulses • Tested/certified detection threshold level • Adjustable circumvention period

Contextual Info: ► ANALOG DEVICES Monolithic Precision, Low Drift FET-lnput Op Amp AD545A* FEA TU R ES PIN CONFIGURATION Low Offset Voltage: 0.5mV max AD545AL 0.25mV max (AD545AM) Low Offset Voltage Drift: 5jjlV/°C max (ADS45AL), 3jjtV/°C max (AD545AM) • Low Power: 1.5mA max

250fiV

Contextual Info: ► ANALOG DEVICES Monolithic Precision, Low Drift FET-lnput Op Amp AD545A* PIN CONFIGURATION FEATU RES Low Offset Voltage: 0.5mV max AD545AL 0.25mV max (AD545AM) Low Offset Voltage Drift: 5jjlV/°C max (ADS45AL), 3jjtV/°C max (AD545AM) • Low Power: 1.5mA max

AN-7505

Abstract: AN75 circuit diagram of thyristor controlled rectifier SCHEMATIC WITH IGBTS MOS-Gated Thyristor semiconductor power devices
Contextual Info: Improved IGBTs with Fast Switching Speed And High-Current Capability Application Note December 1993 AN-7505 Abstract /Title AN75 5 Subect Impro ed GBTs ith ast witch ng peed nd ighurent apaility) Autho ) Keyords Interil orpoation, emionuctor, Cretor () DOCI

Semiconductor Nuclear Radiation Detector

Abstract: fabrication GAMMA Radiation Detector 54AC00 seu Upset 54AC00 54AC245 AN-926 C1995 JM38510 nuclear radiation detector
Contextual Info: National Semiconductor Application Note 926 Michael Maher January 1994 INTRODUCTION Today’s rapidly changing global political climate is significantly impacting the military strategies of Free World countries Important decisions are being made regarding each

pin diode gamma detector

Abstract: GAMMA Radiation Detector neutron detector HSN-1000 nuclear radiation detector gamma radiation pin detector 1X1012 nuclear
Contextual Info: MAXWELL LABS I N C / S-CUBED 37E T> 507^721 00QD04G S H S C U B " T ^ 5 -/3 S-CUBED Division RADIATION HARDENED HYBRID NUCLEAR EVENT DETECTOR M o d e l H S N -1 0 0 0 FEATURES • Detects ionizing radiation pulses • Tested/certified detection threshold level

SCHEMATIC WITH IGBTS

Abstract: AN8603 thyristor rca MOS-Gated Thyristor Abstract schematic power transistor
Contextual Info: Harris Semiconductor No. AN8603.2 Harris Power MOSFETs December 1993 Improved IGBTs with Fast Switching Speed And High-Current Capability Authors: A.M. Goodman, J.R. Russell, L.A. Goodman, C.J. Nuese and J.M. Neilson Abstract Conventional vertical power MOSFETs are limited at high

Contextual Info: ANALO G D E V IC E S Monolithic Precision, Low Drift FET-'17152338 . ‘ ‘ . AD545A* FEATURES Low Offset Voltage: 0.5mV max AD545AL 0.25mV max (AD545AM) Low Offset Voltage Drift: 5p.V/°C max (AD545AL), 3jiV/°C max (AD545AM) Low Power: 1.5mA max Low Bias Current: 1pA max (AD545AK, L, M)

AN8603

Abstract: MOS-Gated Thyristor
Contextual Info: Improved IGBTs with Fast Switching Speed And High-Current Capability Application Note December 1993 AN8603.2 Abstract Conventional vertical power MOSFETs are limited at high voltages >500V by the appreciable resistance of their epitaxial drain region. In a new MOS-gate controlled device

Contextual Info: ANALOG DEVICES FEATURES Uttralow Bias Current: Low Low Low Low Monolithic Precision, Low Power FET-lnput Electrometer Op Amp PIN CONFIGURATION 75fA max AD515AL 150fA max (AD515AK) 300fA max (AD515AJ) Power: 1.5mA max Quiescent Current (0.6mA typ) Offset Voltage: I.OmV max (AD515AK & L)