1012 IR Search Results

Contextual Info: 4613315 HUGHES HUGHES AIRCRAFT AIRCRAFT CO/ CO/ SANTA. SANTA 3fl 38C 00454 DE | 4U13315 ~W T-41-41 0000454 1 ^ | Detectors D* Amax, 90 (cmHz'fyW) (ITO and LTO) D* (Amax, 780) (cmHzy7W) (ATO) Lead Sulfide IR Detectors PbS 1012 1012 • ■ ■ ■ ■ ■ n ra E n n a m m

zvs using op amps

Abstract: OP-07 OP-12 PM1012AJ PM1012AZ PM1012GJ PM1012GP PM1012GS Precision Monolithics PM1008
Contextual Info: Low-Power Precision Operational Amplifier PM-1012 ANALOG ► DEVICES FEATURES • • • • • • industry-standard precision op amps such as the OP-07, the PM-1012 requires less than 1/6 the supply current. These enhancements include exceptionally low bias currents of only

transistor 1012 ge

Abstract: 741 voltage follower NT 101-2s pm1012aj
Contextual Info: Low-Power Precision Operational Amplifier PM-1012 ANALOG ► DEVICES FEATURES • • • • • • industry-standard precision op amps such as the OP-07, the PM-1012 requires less than 1/6 the supply current. These enhancements include exceptionally low bias currents of only

PC MOTHERBOARD CIRCUIT diagram of LG computers

Abstract: AD585 AIP-24 H300 H301 H302 lm35 to 1-5 volts
Contextual Info: AIP-24 24 Channel Analogue Input Board User Manual AIP-24 User Manual Document Part N° Document Reference Document Issue Level 0127-1012 0127-1012.Doc 1.2 Manual covers PCBs identified AIP-24 Rev F All rights reserved. No part of this publication may be reproduced, stored in any retrieval system, or

fe 5571

Abstract: pe 5571 ic pe 5571 fa 5571 transistors type BC 5570 on 1012a ic aop 741 TMDB
Contextual Info: pm ! PM-1012 LOW-POWER, PRECISION OPERATIONAL AMPLIFIER Precision M onolith FEATURES • • Low Supply Current . 600pA Max Very Low Offset . 35/iV Max Low D rift. 1.5fiV/°C Max

PHILIPS SENSOR 2032

Abstract: .47k capacitor image ccd image sensor Contact image sensor BAS28 BAT74 BC860C BFR92 BG40 CCD output buffer
Contextual Info: IMAGE SENSORS FXA 1012 Frame Transfer CCD Image Sensor Objective specification File under Image Sensors Philips Semiconductors 2000 January 7 Philips Semiconductors Objective specification Frame Transfer CCD Image Sensor • 2M active pixels 1616H x 1296V

ksr1012

Contextual Info: KSR2012 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R esistor Built In • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R=47K£1) • C om plem ent to KSR 1012 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

IRF450 equivalent

Contextual Info: SENSITRON SEMICONDUCTOR SHD218505 TECHNICAL DATA DATA SHEET 1012, REV Formerly Part Number SHD2185/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 500 Volt, 0.3 Ohm, 9.0A MOSFET œ Low RDS on œ Equivalent to IRF450 Series MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.

Contextual Info: SENSITRON SEMICONDUCTOR SHD218505 TECHNICAL DATA DATA SHEET 1012, REV Formerly Part Number SHD2185/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 500 Volt, 0.3 Ohm, 9.0A MOSFET œ Low RDS on œ Equivalent to IRF450 Series MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.

Contextual Info: ANALOG DEVICES Low-Power Precision Operational Amplifier PM-1012 FEATURES • • • • Low Supply C u rren t. 600/iA Max Very Low O ffs e t. 35¡¡V Max Low Max

voltis

Abstract: FRL6796D FRL6796H FRL6796M FRL6796R
Contextual Info: Radiation-Hardened M OSFETs_ FRL6796M, FRL6796D, FRL6796R, FRL6796H File N um b er Radiation-Hardened N-Channel Power MOSFETs Radiation-Hardened to: 1 Megarad Si 2 x 1012 Neutrons 8 A, 100 V rDS(on) = 0.18 fi TERMINAL DIAGRAM Features:

ADC1133

Abstract: mpx8a SHA-1A
Contextual Info: ANALOG ► DEVICES Sample and Hold Module FEATURES 12-Bit System Compatible Throughput Nonlinearity 2mV max Over ±10V Input Range Acquitition Time 5/us max Input Buffer, 1012 i 2 R|N Independent Digital, Analog, and Pow«ir Grounds Modular 0.4" High Construction

CA5470

Abstract: CA5470E CA5470M CA5470M96
Contextual Info: CA5470 November 1996 Quad, 14MHz, Microprocessor BiMOS-E Operational Amplifier with MOSFET Input/Bipolar Output Features Description • High Speed CMOS Input Stage Provides - Very High ZI. . . . . . . . . . . . . . . . 5TΩ 5 x 1012Ω (Typ) - Very Low lI . . . . . . . . . . . 0.5pA (Typ) at 5V Operation

FRM6758H

Abstract: FRM6758D FRM6758M FRM6758R
Contextual Info: Radiation-Hardened MOSFETs File N um b er 2171 FRM6758M, FRM6758D FRM6758R, FRM6758H Radiation-Hardened N-Channel Power MOSFETs Radiation-Hardened to: 1 Megarad Si 2 x 1012 Neutrons N-CHANNEL ENHANCEMENT MODE 9 A, 200 V rDs(on) = 0.4 Q D Features: • ■

DSS41A05

Abstract: dss41a12 dss41a24 DSS41B05 DSS41A05 SRC devices mss41a12 SIL41A05 DSS41B12 MSS41A05 SIL41B05
Contextual Info: DEVICES SRC SIP SERIES REED RELAYS SIL4 DSS4 MVS4 MSS4 SPECIFICATIONS MVS4 Non-Position-Sensitive Hg-Wetted SYMBOL MIN TYP MAX MIN TYP MAX VL IL IC CR - - 1000 1 2 3 50(4) 100 - - - 1000 2 50 7 Hg 40 - 200 7 Hg 16 500 2 3 50 100 - IR 1010 1012 - 108 1010

BED02

Abstract: C151C
Contextual Info: HS-82C12RH HARRIS SEMICONDUCTOR Radiation Hardened 8-Bit Input/Output Port December 1992 Features Pinouts • Radiation Hardened CMOS Process - Total Dose 1 x 10s RAD Si - Transient Upset > 1 x 10® RAD(Siys - Latch-Up Immune EPI-CMOS > 1 x 1012 RAD(Siys

FRM6756D

Abstract: FRM6756H FRM6756M FRM6756R 1E1A
Contextual Info: Radiation-Hardened MOSFETs FRM6756M, FRM6756D FRM6756R, FRM6756H File Number 2173 Radiation-Hardened N-Channel Power MOSFETs Radiation-Hardened to: 1 Megarad Si 2 x 1012 Neutrons 14 A, 100 V rDs(on) = 0.18 f i N-CHANNEL ENHANCEMENT MODE Features: • Linear transfer characteristics

43403

Abstract: FRF6766D FRF6766H FRF6766M FRF6766R CGQD
Contextual Info: Radiation-Hardened MOSFETs File N um b er 2322 FRF6766M, FRF6766D, FRF6766R, FRF6766H Radiation-Hardened N-Channel Power MOSFETs Radiation-Hardened to: 1 Megarad Si 2 x 1012 Neutrons 30 A, 200 V rDs<on) = 0.85 fi TERM INAL DIAGRAM Features: • Linear transfer characteristics

Contextual Info: TLV2352, TLV2352Y LinCMOS DUAL LOW-VOLTAGE DIFFERENTIAL COMPARATORS SLCS011A- MAY 1992 - REVISED SEPTEMBER 1996 Wide Range of Supply Voltages 2 V to 8 V High Input Impedance . . . 1012 LI Typ Fully Characterized at 3 V and 5 V Extremely Low Input Bias Current

Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only LED DISPLAY LTC-561ACB-J DATASHEET Rev By - ORIGINAL VERSION A Update VF and Dominant Wavelength for Kritsana T. condition test from 20 mA to 5 mA Dec 11- 1012 SPEC. NO.: DATE Description : DS30-2007-0111

sidd

Abstract: SA2995 Harris top marking
Contextual Info: 33 fcKHffiSR HS-54C138RH Radiation Hardened 3-Line to 8-Line Decoder/Demultiplexer December 1992 Pinouts Features 16 PIN DIP CASE OUTLINE D2, CONFIGURATION 3 TOP VIEW • Radiation Hardened EPI-CMOS - Total Dose 1 x 10s RAD Si - Latch-Up Immune > 1 x 1012 RAD(Si)/s

Contextual Info: SYMBOLS FOR SIMPLE ELECTRICAL CIRCUITS + Voltage Source Current Source es es appears in the circuit for i is is supplied to the circuit for all v DECIMAL FACTOR PREFIXES FACTOR PREFIX SYMBOL 1018 1015 1012 109 106 103 102 101 exa peta tera giga mega E P T

IN4003 diode

Contextual Info: Recognized Components of U ^erwriters^aBoratories^rfi M ITEL D4301«4302*43 S3*4304 DETECTOR/TIMER CIRCUITS FEATURES: •O P TIO N A L INPUT IMPEDANCE (1012^2-1015^ •CURRENT DRAIN LESS THAN 20)JA AT 9V •ON-CHIP LOW BATTERY WARNING •2-SECOND TO 2-YEAR TIMER CAPABILITY

L7612

Abstract: DCPA 7611 ICL7611 l761 ICL7612
Contextual Info: X ICL 7611, ICL 7612 M A ß , 1.4MHz, Low Power November 1996 C M O S O p e ra tio n a l A m p lifie rs Description Features • Wide Operating Voltage Range. ±1 V to ±8 V • High Input Impedance. 1012£2