10100X Search Results
10100X Price and Stock
Hoffmann Group 447010-100X75DOUBLE V-BLOCKS, 100X75MM |
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447010-100X75 | Bulk | 19 | 1 |
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Amphenol CONEC 241A10100XCONN D-SUB PLUG 15POS VERT SLDR |
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241A10100X | Box | 25 |
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Amphenol CONEC 243B10100XCONN D-SUB |
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243B10100X | Bulk |
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Amphenol CONEC 242A10100XCONN D-SUB RCPT 15POS VERT SLDR |
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242A10100X | Box | 25 |
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Amphenol CONEC 243B10100XECONN D-SUB |
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243B10100XE | Bulk |
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243B10100XE | Bulk | 23 | 5 |
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243B10100XE |
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10100X Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 8P0SIT10N FLANGELESS KEYED LOW PROFILE, SIDE ENTRY PCB JACK 2,4,6,a or 10 COLOR 0=GRAY 1= BLACK X ’ OTHERS 11.43 PART NO.9657— 880X 10100X MATERIAL: HOUSING-PBT POLYESTER U L -9 4 V -0 STANDRED COLOR-BUCK TERMINAL-.0138 0.35MM THICK PHRD GOLD AND TIN LEAD |
OCR Scan |
8P0SIT10N 10100X E157380 | |
Contextual Info: 8P0SITI0N FLANGED LOW PROFILE, SIDE ENTRY PCB JACK 0GRAY 1- SLACK X-O THERS 1 1.43 PART NO. 9 63 3 - 880X 10100X MATERIAL; HOUSING-P8T POLYESTER U L -9 4 V -0 STANDRED COLOR—BLACK TERMINAL-.0138 0.35MM THICK PHRO GOLD AND TIN LEAD IN SOLDER AREA. CAVITY CONFIRMS TO FCC RULES AND REGULATIONS |
OCR Scan |
10100X | |
00XXX001
Abstract: BA 5979 R15C3 OR3T125 OR3T20 OR3T30 OR3T55 PT10 PT11 PT12
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OR3T20 OR3T30 1A-06. OR3T80 00XXX001 BA 5979 R15C3 OR3T125 OR3T20 OR3T30 OR3T55 PT10 PT11 PT12 | |
CompactCellTM Static RAMContextual Info: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS |
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Am45DL6408G 16-Bit) 8-Bit/512 73-Ball limitation02 CompactCellTM Static RAM | |
GL032A
Abstract: S71GL032A S71GL032
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S71GL032A 16-bit) 1M/512K/256K GL032A S71GL032 | |
82V3288
Abstract: BC208 transistor GR-1244-CORE GR-253-CORE IDT82V3288
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IDT82V3288 BC208) BCG208) 82V3288 82V3288 BC208 transistor GR-1244-CORE GR-253-CORE IDT82V3288 | |
110R
Abstract: S29GL128N
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Am29LV6402M S29GL128N 110R | |
SLVS transceiver
Abstract: MTV212A16 MTV212A24 MTV212A32 MTV212A32U MTV212A48U MTV212A64U MTV212M MTV212M64 PDIP40
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MTV212M64 12MHz 1024-byte 64K-byte 70TYP. SLVS transceiver MTV212A16 MTV212A24 MTV212A32 MTV212A32U MTV212A48U MTV212A64U MTV212M MTV212M64 PDIP40 | |
SA-275
Abstract: 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G S29PL129J
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Am29PDL129H S29PL129J Am29PDL129J SA-275 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G | |
Contextual Info: A M D il ADVANCE INFORM ATIO N M i i .i i n - i i i i n i i in.i i i « Am29DL162C/Am29DL163C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS A R C H ITEC TU R A L AD VA N TA G ES |
OCR Scan |
Am29DL162C/Am29DL163C 16-Bit) 29DL162C/Am 29DL163C | |
M420000000
Abstract: FSB073 3FE00
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Am42DL640AG 16-Bit) 73-Ball 5M-1994. M420000000 FSB073 3FE00 | |
DL161
Abstract: DL162 DL163
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Am29DL16xD 16-Bit) Am29DL164D Am29DL162D DL161 DL162 DL163 | |
FTA073Contextual Info: Am50DL128BH Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and |
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Am50DL128BH FTA073--73-Ball FTA073 | |
M410000002
Abstract: DL161 DL162 DL163 m410000009 AM29DL164DT
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Am41DL16x4D M410000002 DL161 DL162 DL163 m410000009 AM29DL164DT | |
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DL161
Abstract: DL162 DL163 AM29DL164DT M4200
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Am42DL16x2D FLA069--69-Ball DL161 DL162 DL163 AM29DL164DT M4200 | |
DS42546Contextual Info: DS42546 Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL163D Top Boot 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/ 256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS |
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DS42546 Am29DL163D 16-Bit) 69-Ball DS42546 | |
Contextual Info: Am29DL640D 64 Megabit 8 M x 8-Bit/4 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while executing erase/program functions in another bank. |
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Am29DL640D 16-Bit) 256od) | |
Contextual Info: ADVANCE INFORMATION Am29LV640MH/L 64 Megabit 4 M x 16-Bit/8 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 V for read, erase, and program operations |
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Am29LV640MH/L 16-Bit/8 128-word/256-byte 8-word/16-byte TS056 TSR056 0004h 0001h | |
TSOP-20 FOOTPRINT
Abstract: tray datasheet bga 8x9 JESD 95-1, SPP-010 PL032J AM29PDL S29PL-J
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S29PL-J 16-Bit) S29PL-J TSOP-20 FOOTPRINT tray datasheet bga 8x9 JESD 95-1, SPP-010 PL032J AM29PDL | |
S29JL064H
Abstract: S29PL064J 29F400 flash
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Am29DL640H S29JL064H S29PL064J AM29DL320H S29JL064H S29PL064J 29F400 flash | |
ba 3917
Abstract: potentiometer 10 k AD5170BRMZ2.5
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256-Position, AD5170 256-position 10-Lead AD5170 D04104-0-1/08 ba 3917 potentiometer 10 k AD5170BRMZ2.5 | |
SA158
Abstract: SA214 8adrr
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S29PL127H SA158 SA214 8adrr | |
samsung ba92
Abstract: BA137 k8p3215
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K8P6415UQB 64-Ball 60Solder samsung ba92 BA137 k8p3215 | |
voice recording circuit with isd4004
Abstract: ISD4004 application examples ISD4004 47ADLM293 isd chipcorder application notes ISD4000 ISD4004 Series voice ISD4004 P11A14 ISD4004-08M
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ISD4004 16-Minute 2200998D4004 voice recording circuit with isd4004 ISD4004 application examples 47ADLM293 isd chipcorder application notes ISD4000 ISD4004 Series voice ISD4004 P11A14 ISD4004-08M |