100WP Search Results

2SC2879

Abstract: 2sc2879 transistor
Contextual Info: 2SC2879 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm l Specified 12.5V, 28MHz Characteristics l Output Power : Po = 100WPEP l Power Gain : Gp = 13dB l Collector Efficiency

2SC2879A

Abstract: 2sc2879 transistor 2SC2879 2sc2879 equivalent toshiba 2sc2879
Contextual Info: 2SC2879A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm z Specified 12.5V, 28MHz Characteristics z Output Power : Po = 100WPEP z Power Gain : Gp = 13dB z Collector Efficiency

100WPEP

Abstract: Ferrite core TDK D1S1555
Contextual Info: TOSHIBA 2SC2879 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE n r ? R 7 Q 2-30MHZ SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE • Specified 12,5V, 28MHz Characteristics • O utput Power r i c 'r , • • U nit in mm : Po = 100Wp e p

100WPEP

Abstract: 2SC2879 2sc2879 equivalent
Contextual Info: SILICON NPN EPITAXIAL PLAN AR TY P E 2SC2879 2 -30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. Unit in m m LOW SUPPLY VOLTAGE USE FEATURES : . S p e c i f i e d 1 2 .5 V, : Output Power : Minimum Gain : Efficiency 28MHz Characteristics : P o=100WpEP : Gpe=10dB

2SC2879

Abstract: toshiba 2sc2879 2SC2879A 2sc2879 equivalent
Contextual Info: 2SC2879A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm z Specified 12.5V, 28MHz Characteristics z Output Power : Po = 100WPEP z Power Gain : Gp = 13dB z Collector Efficiency

toshiba 2sc2879

Abstract: 2sc2879 equivalent
Contextual Info: 2SC2879A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm z Specified 12.5V, 28MHz Characteristics z Output Power : Po = 100WPEP z Power Gain : Gp = 13dB z Collector Efficiency

2SC2879

Abstract: 2sc2879 equivalent 2sc2879 transistor toshiba 2sc2879 100WPEP dust collector
Contextual Info: 2SC2879 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm Specified 12.5V, 28MHz Characteristics Output Power : Po = 100WPEP Power Gain : Gp = 13dB Collector Efficiency

arco 465

Abstract: arco 469 SD1487 100WPEP arco 463
Contextual Info: SD1487 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . 30 MHz 12.5 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION POUT = 100 W MIN. WITH 12.0 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1487 BRANDING SD1487 PIN CONNECTION DESCRIPTION The SD1487 is a 12.5 V Class C epitaxial silicon

Contextual Info: H U GEC P L E S S E Y JKoBBUOmililD ADVANCE INFORMATION DS3660-1 2 SP8607 600MHz-^2 The SP8607 is an emitter coupled logic divider which features ECL1 OK compatible outputs when used with external pulldown resistors. The inputs are AC coupled. FEATURES • ECL Compatible Outputs

arco 469

Abstract: arco 465 100WPEP SD1487 arco 463
Contextual Info: SD1487 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . 30 MHz 12.5 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION P OUT = 100 W MIN. WITH 12.0 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1487 BRANDING SD1487 PIN CONNECTION DESCRIPTION

toshiba 2sc2879

Abstract: 2-13B1A 2SC2879 Ferrite core TDK 2sc2879 equivalent IS1555 10ID 1S1555 50WV 2sc2879 transistor
Contextual Info: TOSHIBA 2SC2879 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE Specified 12.5V, 28MHz Characteristics Output Power Power Gain Po = lOOWpEP Gp = 13dB 7 c = 35%(Min.) Collector Efficiency

MHPM7A12A120A

Abstract: 9V bridge rectifier ic
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MHPM7A12A120ND DATA — — MHPM7A12A1 20A Hybrid Power Module MotorolaPreferred Device Integrated Power Stage for 2.0 hp Motor Drives This module integrates a 3–phase input rectifier bridge, +phase

SD1487

Contextual Info: / I T * 7 # . S G S -IH O M S O N « i i m i ê T i w SD1487 * ! RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS • i ■ a . . 30 MHz 12.5 VOLTS IMD -3 0 dB COMMON EMITTER GOLD METALLIZATION Pout = 100 W MIN. WITH 12.0 dB GAIN PIN CONNECTION 4 a 1 o f jO

SD1487

Contextual Info: Jzi±£.u i, L/ nc. 20 STERN. AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 SD1487 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS 30 MHz 12.5 VOLTS IMD-30 dB COMMON EMITTER GOLD METALLIZATION POUT = 100 W MIN. WITH 12.0 dB GAIN

Contextual Info: fZ ^ 7 7 S G S -T H O M S O N SD1487 #. K M « « ® « ! RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS • 30 MHz . 12.5 VO LTS ■ IMD -3 0 dB . C O M M O N EMITTER ■ G O LD M ETALLIZATION . P qut — 100 W MIN. WITH 12.0 dB GAIN PIN C O N N E C TIO N

5501a

Abstract: 5501a chip ic E067 sumitomo silver epoxy CRM-1061 NLG4130
Contextual Info: NEL NS GD E067 30 Jun.1999 PRELIMINARY NLG4130 1 : 2 CLOCK DISTRIBUTOR AC Coupling The NLG4130 is an ultra-fast 1:2 Clock Distributor operating at up to 10 GHz (MIN.). Designed with LSCFL (Low-power Source Coupled FET Logic), DC coupling is used for the signal input. Either AC coupling or DC coupling can be used for the outputs.

toshiba 2sc2879

Abstract: 2SC2879 CB LINEAR CIRCUIT IS1555 2SC2879 2sc2879 equivalent 50wv 10ID 1S1555
Contextual Info: TOSHIBA 2SC2879 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879 Unit in mm 2 ~ 3 0 M H z SSB LINEAR POWER AMPLIFIER APPLICATIONS L O W SUPPLY VOLTAGE USE Specified 12.5V, 28MHz Characteristics Output Power Po = lOOWpEP Power Gain Gp = 13dB

Contextual Info: TO SHIBA 2SC2879 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE K f 9R7Q Unit in mm 2~30MHz SSB LINEAR PO W ER AM PLIFIER APPLICATIONS LO W SUPPLY VOLTAGE USE Specified 12.5V, 28MHz Characteristics Output Power Po = lOOWpEP Power Gain Gp = 13dB Collector Efficiency

SOT43

Abstract: MAX6315
Contextual Info: 19-2000; Rev 0; 6/96 Open-Drain S O T p P R eset Circuit General Description _ Applications .Features ♦ Small SOT143 Package ♦ Open-Drain RESET Output Can Exceed Vcc ♦ Precision, Factory-Set V c c Beset Thresholds:

AP1420

Abstract: AP1400 dc relay snubber RTD PT-100 1N4006 C620 din 43760 AP142 AP1400-1420
Contextual Info: Action Pak RTD Input Limit Alarms Models AP1400, AP1420 Provides Relay Contact Closure s at a Preset RTD/Resistance Input Level • Exclusive “Dynamic Deadband” Prevents False Trips • “Failsafe” Operation Available • Temperature/Resistance Alarm/Control