100W 80V MOS Search Results

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

NAVSO-P3641-A

Abstract: RTCA DO-160 MQME-28E-T hl 5000g MQFL-28 P-3641A
Contextual Info: MADE IN USA Advancing the Power Curve Hi-Rel Products for the Military and Aerospace Industry Hi-Rel DC-DC Converters for Military/Aerospace The MilQor ® series of high-reliability DC-DC converters brings SynQor’s field proven high-efficiency synchronous rectifier technology to the Military/Aerospace industry. SynQor’s innovative QorSeal packaging

NTE2930

Abstract: NTE293
Contextual Info: NTE2930 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Avalanche Rugged Technology D Rugged Gate Oxide Technology D Lower Input Capacitance D Improved Gate Charge D Extended Safe Operating Area D Lower RDS on : 0.032Ω Typ D Lower Leakage Current: 10µA (Max) @ VDS = 100V

12v 1200W DC POWER SUPPLY SCHEMATIC

Abstract: DQ65033QMA06NNS 110VDC to 12vdc converter 601 Opto isolator 1000w buck boost converter RTCA DO-160 POWER 12v 28V 3A 60W DC-DC htc legend DC converter 50A 100V NQ04W33SMA16PSS
Contextual Info: VE A AD R V C U N C HE POW T G ER N I Fa l l 2 0 1 0 C omplete Product C atalog Founded in 1997, SynQor has become the technology, quality and service leader for high efficiency dc-dc converters for the telecom/datacom marketplace. The PowerQor®, BusQor®,

Contextual Info: 2SK2649-01R N-channel MOS-FET FAP-IIS Series 800V > Features - 1,5Ω 9A 100W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications -

2SK2763-01

Contextual Info: 2SK2763-01 N-channel MOS-FET FAP-IIS Series 800V > Features - 4Ω 4A 100W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators

2SK2649-01R

Contextual Info: 2SK2649-01R N-channel MOS-FET FAP-IIS Series 800V > Features - 1,5Ω 9A 100W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications -

2SK2763-01

Contextual Info: 2SK2763-01 N-channel MOS-FET FAP-IIS Series 800V > Features - 4Ω 4A 100W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators

Contextual Info: 2SK2763-01 N-channel MOS-FET FAP-IIS Series 800V > Features - 4Ω 4A 100W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators

2SK2649-01R

Contextual Info: 2SK2649-01R N-channel MOS-FET FAP-IIS Series 800V > Features - 1,5Ω 9A 100W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications -

VN88AF

Abstract: VN0108N2 VN64GA 1rf820 2N6658 BUZ44 VN1000A BUZ34 BUZ 355 equivalent IRF240
Contextual Info: Siliconix 1-1? f l MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60

LTC4357MP

Abstract: lt4356-3 48V 100W zener diode SMAT70A MBR10100 FDB3632 LTC4357 LTC4357H 80v solar panel BSS123 5A
Contextual Info: LTC4357 Positive High Voltage Ideal Diode Controller Features Description Reduces Power Dissipation by Replacing a Power Schottky Diode with an N-Channel MOSFET n 0.5µs Turn-Off Time Limits Peak Fault Current n Wide Operating Voltage Range: 9V to 80V n Smooth Switchover without Oscillation

2SJ54 sony

Abstract: VN0104N1 VN0108N2 VN0109n5 IRF232 IRF240 IRF422 IRF522 irf532 equivalent IRF632
Contextual Info: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170

irf540 mosfet control motor

Abstract: LT2940 2N3904 motor IRF54 "analog multiplier" 2N3904 IRF540 application mur120 FDB3632 IRF540
Contextual Info: True Analog Power and Current Monitoring 4-Quadrant Multiplication Handles Bidirectional Currents and Bipolar Voltages The LT 2940 is a power and current monitor for 4V to 80V systems that brings together the necessary circuits to accurately measure, monitor and control power. Unlike traditional power monitors that rely on data converters and multiplying registers to

VN89AF

Abstract: IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642
Contextual Info: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1 -6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150

sml1310ig

Contextual Info: SML1310IG MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS VDS ID(max) RDS(on) 100V 18A Ω .044Ω FEATURES • HERMETICALLY SEALED TO257 METAL PACKAGE • SIMPLE DRIVE REQUIREMENTS • LIGHTWEIGHT • SCREENING OPTIONS AVAILABLE

sml1310igf

Contextual Info: SML1310IGF MECHANICAL DATA Dimensions in mm inches 4.50 4.81 10.40 10.80 3.0 0.75 0.95 3.50 Dia. 3.70 10.50 10.67 16.30 16.70 N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS VDS ID(max) RDS(on) 1 2 3 1.0 dia. 3 places Á 20 Min. 2.1 max. À 100V 18A Ω

Contextual Info: ACON TM DC-DC CONVERTERS GH Single output 25 to 150W Input Ranges: 10 - 75V Single Output: 3.3V, 5.0V, 7.5V 12V, 15V, 24V 28V, 48V, 60V, 80V Dual Output: +5V/+12V +5V/+15V Bipolar Output: ±12V ±15V FEATURES General: • Small footprint : 1.9” x 3.0”

Full-bridge forward inverter

Abstract: zvs flyback driver push-pull converter 80V 15A 1kw full bridge converter design inverter Controller PWM 1kw transformer 50KHz 100W Full-bridge forward converter SIMPLE 40w inverter circuit flyback 200w LT3722
Contextual Info: Linear Technology Chronicle High Performance Analog Solutions VOL 15 NO. 5 FOCUS. Solutions for Isolated Power Supplies PUSH-PULL, HALF- OR FULL-BRIDGE CONTROLLER FORWARD CONVERTERS 300W LT1952 FLYBACK CONVERTERS LTC3705/LTC3725 PRIMARY SIDE CONTROLLERS

r12b

Abstract: DC-1495A TT6-R200-F-100L C2012X7R2A mark R5A SMAT70A LT2940 DC1495A
Contextual Info: DEMO CIRCUIT 1495A DC-1495A QUICK START GUIDE LT2940 Power Monitor DESCRIPTION Demonstration circuit 1495A showcases the LT2940 Power Monitor, configured to measure up to 30W over a range of 8V to 40V and 0A to 3A. LEDs indicate when the load power exceeds

Contextual Info: PD - 97230A IRF6665PbF IRF6665TRPbF DIGITAL AUDIO MOSFET Features • Latest MOSFET Silicon technology • Key parameters optimized for Class-D audio amplifier applications • Low RDS on for improved efficiency • Low Qg for better THD and improved efficiency

IRF6665

Abstract: IRF6665TR1
Contextual Info: PD - 96900C IRF6665 DIGITAL AUDIO MOSFET Features • Latest MOSFET Silicon technology • Key parameters optimized for Class-D audio amplifier applications • Low RDS on for improved efficiency • Low Qg for better THD and improved efficiency • Low Qrr for better THD and lower EMI

ksd 250v 10a

Abstract: B0X34C ksd 202 ksa 3.3 KSC1330 IR 733 sa992 uhf fm 1845 IF 508AF KSA733
Contextual Info: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment Package Application SOT-23 TO-92 FM RM AMP M ix Conv Local O se IF KSC 2223 KSC 2223 KSC 2223 KSC 2715 KSC 1674 KSC 1674 KSC1674/KSC1675 KSC838/KSC1676 AM RF Conv O se KSC1623

Contextual Info: PD - 96900C IRF6665 DIGITAL AUDIO MOSFET Features • Latest MOSFET Silicon technology • Key parameters optimized for Class-D audio amplifier applications • Low RDS on for improved efficiency • Low Qg for better THD and improved efficiency • Low Qrr for better THD and lower EMI