100V5 Search Results

Contextual Info: VXv'J-X A°7-M 0 S F E T VX Series Power MOSFET O U T L IN E D IM E N S IO N S 2SK1249 Case CF15W50 M T O -3P 5.0 ±0'3 50QV 15A • A tlS B I f let? U [Unit I m m ] i 3.3 Ciss) 2.0 1 ) U • í V ig í / ií M 'í iA h tm ix 2.4 * ffl i i • A C 100V5SA

1024x1 static ram

Contextual Info: HS-6508RH ¡13 H A R R IS U U S E M I C O N D U C T O R Radiation Hardened 1024x1 CMOS RAM December 1992 Pinouts Features • Functional Total Dose 2 x 104 RAD Si HS1-6508RH 16 PIN CERAMIC DIP CASE OUTLINE D2, CONFIGURATION 3 • Latch-Up Free To > 5.0 x 1011 RAD(Si)/s

3211a

Contextual Info: HARRIS S E N I C O N D S E C T O R so HARRIS S E M I C O N D U C T O R C M M 5 1 1 4 A Radiation Hardened, High Reliability, CMOS/SOS 1024 Word by 4 Bit LSI Static RAM December 1992 Features • IHAS 43 G2 27 1 G G 4 S 3 7 Ü bl3 5ÖE D Pinout 1$ PIN CERAMIC DtP

Contextual Info: HARRIS SEMICON] S E C T O R SflE » • 43D2271 0044147 5Ô1 « H A S HCS154MS 3) M "» ? *? Radiation Hardened 4-to-16 Line Decoder/Dem ultiplexer December 1992 Pinouts Features 24 PIN CERAMIC DUAL-IN-LINE MIL-STD-1835, DESIGNATOR CDIP2-T24, LEAD FINISH C

Contextual Info: HS-26C31RH HARRIS S E M I C O N D U C T O R æ Radiation Hardened Quad Differential Line Driver March1995 Features Pinouts • 1.2 Micron Radiation Hardened CMOS -Total Dose Up to 300K RAD Si -Dose Rate Upset > 1x10* RAD/Sec (20nS Pulse) • Latchup Free

81C55

Abstract: intel 8155 80C85 8155 intel microprocessor programming 81C55RH 81C56RH HS-80C85RH HS-81C55RH HS-81C56RH 11KA2
Contextual Info: 5ÖE J> H A RR IS S E M I C O N D SE CT OR HARRIS S E M I C O N D U C T O R 4 3 0 S 27 1 0 0 4 5 5 3 t 217 « H A S HS-81C55RH HS-81C56RH Radiation Hardened 256 x 8 CMOS RAM Decem ber 1992 Features “ * 'P 4 U Pinouts '2 3 r l2 - . 4 0 P IN C E R A M IC D IP

LZSA500-3 Evaluation Data

Abstract: lzsa5003 evaluation data 220VAC to 24VDC transformer HP6050A HP6655A WT1030 HP54503A transformer 220Vac to 24Vdc LZSa5003 500w class d amplifier
Contextual Info: LZSa5003 EVALUATION DATA LZSa5003 Evaluation Data INDEX 1.- Load/Line Regulation test 2.- Temperature Drift 3.- Efficiency vs Output Current 4.- Power Factor vs Output Current 5.- Standby Input Current under inhibit condition & Input Current vs Output Current.

Contextual Info: HA RR IS SEtlICOND S E C T O R SßE D • 4 3 G2 S7 1 Q 0 4 4 E b 4 SHI « H A S HCTS240MS S3 tt« Radiation Hardened Octal Buffer/Line Driver, Tri-State D ecem ber 1992 Features • T Pinouts 5 2 " ! 20 PIN CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR CDIP2-T20, LEAD FINISH C

Contextual Info: HA RR IS S E M I C O N D S E CT OR 5ÖE D • HCTS373MS S3 Radiation Hardened Octal Transparent Latch, Tri-State December 1992 — Features • 43 DB2 71 O G M M B S b 3Sb H H A S 1 = J / 6 r 0 7 - t i 20 PIN CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR, CDIP2-T20, LEAD FINISH C

Contextual Info: HA RR IS S E I U C O N D S E C T O R SflE » • M 3 02 E7 1 0 G M 4 1 1 Ô 7ÔG » H A S HCTS139MS S ttSBSSS Radiation Hardened Dual 2-to-4 Line Decoder/Demultiplexer December 1992 Features r - £ 1 - 2 1 -5 5 Pinouts • 3 Micron Radiation Hardened SOS CMOS

truth table 7454

Contextual Info: ÇS\ H U U A R R HCTS240MS IS S E M I C O N D U C T O R Radiation Hardened Octal Buffer/Line Driver, Tri-State December 1992 Features Pinouts • 3 Micron Radiation Hardened CMOS SOS 20 PIN CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR CDIP2-T20, LEAD FINISH C

SOCKET PLCC28

Abstract: 24c256 Atmel TANTAL 16V marking code p42 SMD AT88C51 eeprom 24C256 at89 c31 E2p device marking atmel 24c256 iso7816 sim
Contextual Info: AT89STK-03 Starter Kit for AT8xC5122 & AT83C5123 . Hardware User Guide Table of Contents Section 1 Introduction . 1-1

Contextual Info: m HCTS109MS HARRIS U U S E M I C O N D U C T O R Radiation_Hardened Dual JK Flip Flop December 1992 Pinouts Features • 3 Micron Radiation Hardened SOS CMOS 16 PIN CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR CDIP2-T16, LEAD FINISH C • Total Dose 200K or 1 Mega-RAD SI

Contextual Info: HCTS4002MS S Radiation Hardened Dual 4-Input NOR Gate December 1992 Features Pinouts • 3 Micron Radiation Hardened CMOS SOS 14 PIN CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR CDIP2-T14, LEAD FINISH C TOP VIEW • Total Dose 200K or 1 Mega-RAD SI • Dose Rate Upset >101° RAD(Siys 20ns Pulse

Contextual Info: HCTS75MS £ fì H A R R IS S E M I C O N D U C T O R Radiation Hardened Dual 2-Bit Bistable Transparent Latch December 1992 Features Pinouts 16 PIN CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR CDIP2-T16, LEAD FINISH C TOP VIEW • 3 Micron Radiation Hardened SOS CMOS

Contextual Info: HA RR IS S E n i C O N D S E C T O R 43 0 2 2 7 1 0 0 4 3 ^ 6 6 SÖE D 4b4 H H A S H A R R IS c£ SEMICONDUCTOR Radiation Hardened Dual 4-Input AND Gate December 1992 • p -4 ^ r2 ^ Pinouts Features • 3 Micron Radiation1Hardened SOS CMOS 14 PIN CERAM IC DUAL-IN-UNE

Contextual Info: CMM5114A HARRIS S E M IC O N D U C T O R Radiation Hardened, High Reliability, CMOS/SOS 1024 Word by 4 Bit LSI Static RAM December 1992 Features Pinout • Radiation Hardened to 100KRAD SI IS P M CERAM IC DIP C A S E OUTLINE D6, CONFIGURATION 3 TOP VIEW • Cosmic Ray Upeet Immunity 2 x 10r Errors/Bit Day (TYP)

Contextual Info: HCTS163MS CSJ HARRIS S E M I C O N D U C T O R Radiation Hardened Synchronous Counter December 1992 Pinouts Features • 3 Micron Radiation Hardened CMOS SOS 16 PIN CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR CDIP2-T16, LEAD FINISH C TOP VIEW • Total Dose 200K or 1 Mega-RAO Si

Contextual Info: 3 December 1992 HS-3516RH High Slew Rate, Wideband, Radiation Hardened, Operational Amplifier Pinout Features • Radiation Environment • Gamma Rate y 1 x 10 RAD(Siys - Gamma Dose (y ) 1 x 1 0 s RAD(SI) HS9-3516RH 14 PIN CERAMIC FLATPACK CASE OUTLINE F2, CONFIGURATION 2

HS-26CT31MS

Abstract: HS-26CT31 harris HS-26CT31MS
Contextual Info: HS-26CT31MS HARRIS S E M I C O N D U C T O R Radiation Hardened Quad Differential Line Driver Decem ber 1992 Pinouts Features HS1-26CT31MSR 16 PIN CERAMIC DUAL-IN-LINE CASE OUTUNE D2, CONFIGURATION 3 TOP VIEW • 1.2 Micron Radiation Hardened CMOS - Total Dose Up to 300KRAD Si

IC HS 8110

Abstract: IC HS 8108 power supply hs 8109 IC HS 8108 HS 8110 IC 3029 IFC IC HS 8109 8110 HS IC HS 8108 8 PIN HS 8108
Contextual Info: f f l H U U S E M I C O N D U C T O R A R R HS-6514RH IS Radiation Hardened 1024 X 1 CMOS RAM December 1992 Pinouts Features • Total Dose 1 x 10s RAD SI HS1-6514RH 18 PIN CERAMIC DIP CASE OUTLINE D-6, CONFIGURATION 3 TOP VIEW • Data Upset >10° RAD (SIVs

IC 7448 truth table

Abstract: 7446 pin diagram and truth table IC 7447 All ic 7447 truth table
Contextual Info: HCS195MS ill HARRIS U U S E M I C O N D U C T O R Radiation Hardened Inverting 8-Bit Parallel-lnput/Serial Output Shift Register December 1992 Features Pinouts • 3 Micron Radiation Hardened CMOS SOS 16 PIN CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR, CDiP2-T16, LEAD FINISH C

5001cl

Abstract: TA 7629
Contextual Info: HCTS4002MS 3 ttfSSSS Radiation Hardened Dual 4-Input NOR Gate December 1992 Pinouts Features 14 PIN CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR CDIP2-T14, LEAD FINISH C TOP VIEW • 3 Micron Radiation Hardened CMOS SOS • Total Dose 200K or 1 Mega-RAD Si

to-247 to-220 to-3p

Abstract: IXTA52P10P IXTA36P15P IXTN40P50P IXTQ52P10P sot-227 footprint IXTA10P50P ixtq IXTH10P50 IXTH10P50P
Contextual Info: IXYS POWER Efficiency through Technology N EW P RO D U C T B RIE F PolarPTM P-Channel Power MOSFETs Next Generation P-Channel Power MOSFETs -100V to -500V MAY 2008 OVERVIEW IXYS’ PolarP P-Channel Power MOSFETs are designed to bring a more cost-effective