100V 100A MOSFET Search Results

"MOSFET Module"

Abstract: E80276 FM200TU-2A
Contextual Info: MITSUBISHI <MOSFET MODULE> FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-2A ● ID rms . 100A ● VDSS . 100V ● Insulated

Contextual Info: MITSUBISHI <MOSFET MODULE> FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-2A ● ID rms . 100A ● VDSS . 100V ● Insulated

Contextual Info: MITSUBISHI <MOSFET MODULE> FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-2A ● ID rms . 100A ● VDSS . 100V ● Insulated

DIODE T25

Abstract: DIODE T25 4 E80276 FM200TU-2A
Contextual Info: MITSUBISHI <MOSFET MODULE> FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-2A ● ID rms . 100A ● VDSS . 100V ● Insulated

Mosfet

Abstract: SSF1010
Contextual Info: SSF1010 100V N-Channel MOSFET Main Product Characteristics VDSS 100V RDS on 9.5mohm(typ.) ID 100A TO-220 Features and Benefits   Marking and Pin Schematic Diagram Assignment Advanced trench MOSFET process technology Special designed for PWM, load switching and

d20nf10

Abstract: JESD97 STD20NF10 STD20NF10T4 CTJ3 D20NF
Contextual Info: STD20NF10 N-channel 100V - 0.038Ω - 100A - DPAK Low gate charge STripFET II Power MOSFET Features Type VDSS RDS on ID STD20NF10 100V <0.045Ω 25A(1) 1. Current limited by package 3 • Exceptional dv/dt capability ■ Application oriented characterization

Contextual Info: STD20NF10 STD20NF10-1 N-channel 100V - 0.038Ω - 100A - DPAK/IPAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID STD20NF10-1 100V <0.045Ω 25A(1) STD20NF10 100 <0.045Ω 25A(1) 1. Current Limited by Package • Exceptional dv/dt capability

MOSFET 50V 100A TO-220

Abstract: MOSFET 50V 100A FDP045N10A FDI045N10A
Contextual Info: FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench MOSFET 100V, 164A, 4.5mΩ Features Description • RDS on = 3.8mΩ ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been

Contextual Info: AP85T10AGP-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D Lower On-resistance Fast Switching Characteristic G RoHS Compliant & Halogen-Free BVDSS 100V RDS ON 8m ID 100A S Description

100V 100A Mosfet

Abstract: TM-04 E80276 FM200TU-2A
Contextual Info: 三菱半導体〈MOSFETモジュール〉 FM200TU-2A 大電力スイッチング用 絶縁形 FM200TU-2A ● ID rms . 100A ● VDSS . 100V

APT10M11LVR

Contextual Info: APT10M11LVR 0.011Ω 100V 100A POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

MAX1370

Abstract: APT10M09LVR
Contextual Info: APT10M09B2VR APT10M09LVR 100V 100A 0.009W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: STB100NF03L-03-1 N-CHANNEL 100V - 0.0026 Ω - 100A I2PAK STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS R DS on ID STB100NF03L-03-1 30 V <0.0032 Ω 100 A TYPICAL RDS(on) = 0.0026 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE DESCRIPTION

Contextual Info: APT10M11B2VR 0.011Ω 100V 100A POWER MOS V T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT10M09B2VFR APT10M09LVFR 100V 100A 0.009W POWER MOS V FREDFET B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT10M11B2VFR

Abstract: TF6646 APT10M11LVFR
Contextual Info: APT10M11B2VFR APT10M11LVFR 100V 100A 0.011W B2VFR POWER MOS V FREDFET T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT10M09B2VFR

Abstract: APT10M09LVFR
Contextual Info: APT10M09B2VFR APT10M09LVFR 100V POWER MOS V FREDFET 100A 0.009Ω B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT10M09B2VFR APT10M09LVFR 100V POWER MOS V FREDFET 100A 0.009Ω B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: Advanced Power Electronics Corp. AP85T10AGP-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Low On-resistance Fast Switching Speed G RoHS-compliant, halogen-free BV DSS 100V R DS ON 8mΩ ID 100A S Description D (tab) Advanced Power MOSFETs from APEC provide the designer with

N mos 100v 100A

Contextual Info: SEM E mi SM L10M 11LVR LAB 5 T H G E N E R A T IO N M O S F E T T O -2 6 4 A A P ackage O utline Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS Pin 1 - Gate Pin 2 - Drain Pin 3 - Source • • • • V qss 100V ^D(cont) 100A

AOTF12N60

Abstract: AOT12N60 VDS-100V AOTF12
Contextual Info: AOT12N60 / AOTF12N60 600V, 12A N-Channel MOSFET formerly engineering part number AOT9610/AOTF9610 General Description Features The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance

Contextual Info: APTM20UM05S Single switch Series & parallel diodes MOSFET Power Module SK VDSS = 200V RDSon = 5m max @ Tj = 25°C ID = 317A @ Tc = 25°C Application CR1 D • • • S Motor control Switched Mode Power Supplies Uninterruptible Power Supplies Q1 Features G

ICE3B0365J

Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
Contextual Info: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)

Contextual Info: APTM20UM09S Single switch Series & parallel diodes MOSFET Power Module SK VDSS = 200V RDSon = 9m max @ Tj = 25°C ID = 195A @ Tc = 25°C Application CR1 D • • • S Motor control Switched Mode Power Supplies Uninterruptible Power Supplies Q1 Features G