100U8 Search Results

itt diodes lz 150

Contextual Info: STRUCTURE Silicon Monolithic Integrated Circuit PRODUCT CMOS Type series regulator TYPE B H 1 8 F B 1W G Fig. 1 Plastic Mold Fig.2 Fig. 3 - 8 Fig-21 PACKAGE BLOCK TEST CIRCUIT APPRI CAT ION CIRCUIT FUTURES # # # # # # # # # Output Voltage Accuracy 1.8V±25mV

WI11

Abstract: BH30FB1WHFV
Contextual Info: STRUCTURE Silicon Monolithic Integrated Circuit PRODUCT CMOS Type series regulator type BH30FB1WHFV PACKAGE Fig.1 Plastic Mold BLOCK Fig.2 TEST CIRCUIT Fig.3 - 9 APPRICATION CIRCUIT Fig.23 FUTURES # # # # # # # # # Output Voltage Accuracy 3.0V±1.0% Output Max Current 150mA

100u8

Contextual Info: STRUCTURE Silicon Monolithic Integrated Circuit PRODUCT CMOS Type series regulator TYPE B PACKAGE BLOCK TEST CIRCUIT APPRICATION CIRCUIT H 2 9 F 1 B W G Fig. 1 Plastic Mold Fig.2 Fig. 3 - 9 Fig.23 FUTURES # # # # # # # # # Output Voltage Accuracy 2.9V±1.0%

diode 310Q

Abstract: BH31FB1WHFV 31-0q
Contextual Info: STRUCTURE Silicon Monolithic Integrated Circuit PRODUCT CMOS Type series regulator TYPE B H PACKAGE BLXK TEST CIRCUIT APPRICATION CIRCUIT 3 1 F B 1 W H F V Fig.1 Plastic Mold Fig. 2 Fig.3— 9 Fig.23 FUTURES # # # # # # # # # Output Voltage Accuracy 3.1 V ± 1 .0%

Contextual Info: STRUCTURE Silicon Monolithic Integrated Circuit PRODUCT CMOS Type series regulator B TYPE H 3 F B 1 W G Fi g.1 Plastic Mold PACKAGE Fig.2 BLOCK F ig. 3 - 9 TEST CIRCUIT APPRICATION CIRCUIT Fig.23 FUTURES # # # # # # # # # Output Voltage Accuracy 3.0V±1.0%

100U

Abstract: 40RM
Contextual Info: STRUCTURE Silicon Monolithic Integrated Circuit PRODUCT CMOS Type series regulator BH29FB1WHFV TYPE PACKAGE BLOCK TEST CIRCUIT APPRICATION CIRCUIT Fig. 1 Plastic Mold Fig. 2 Fig. 3 - 9 Fig.23 FUTURES # # # # # # # # # Output Voltage Accuracy 2.9V±1.0% Output Max Current 150mA

100U

Contextual Info: STRUCTURE Silicon Monolithic Integrated Circuit PRODUCT CMOS Type series regulator TYPE B H 3 3 F B 1W G Fig. 1 Plastic Mold PACKAGE BLOCK Fig. 2 Fig. 3 ~ 9 TEST CIRCUIT APPRI CAT ION CIRCUIT Fig.23 FUTURES # # # # # # # # # Output Voltage Accuracy 3.3V±1.0%

Contextual Info: STRUCTURE Silicon Monolithic Integrated Circuit PRODUCT CMOS Type series regulator BH 1 8FB1WHFV TYPE Fig.1 Plastic Mold Fig. 2 Fig. 3 - 8 Fig.21 PACKAGE BLOCK TEST CIRCUIT APPRI CAT ION CIRCUIT FUTURES # # # # # # # # # Output Voltage Accuracy 1.8V±25mV

HC49U 4,9152 MHZ

Abstract: quartz HC49S DXO-2033 HC49U SMD SMD 14.7456 quartz crystal DX-57 DXO-2059 DXO-57 XTL-1079 XTL-1098
Contextual Info: Crystal Unit - HC-49/U Outline Drawing Features & Applications: Dimension Unit=mm 13.2 ±0.3 4.88 ±0.2 13.0 ±0.3 0.43 ±0.03 10.9 ±0.3 4.65 ±0.2 t
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CK66

Contextual Info: STRUCTURE Silicon Monolithic Integrated Ci reu it PRODUCT CMOS Type series regulator type BH3 3 F B 1 W H F V PACKAGE Fig.1 Plastic Mold BLOCK Fig. 2 TEST CIRCUIT Fig.3 - 9 APPRICATION CIRCUIT Fig.23 FUTURES # # # # # # # # # Output Voltage Accuracy 3.3 V ± 1 .0%

87C652

Abstract: marking wt5 80C51 P80C652FBP
Contextual Info: • 711002b DDbb7bS 73D ■ P H I N Philips Semiconductors Microcontroller Products Product specification CMOS single-chip 8-bit microcontroller DESCRIPTION PIN CONFIGURATION The 87C652 Single-Chip 8-Bit Microcontroller is manufactured in an advanced CMOS

Contextual Info: i DS05-11030-1E FUJITSU SEMICONDUCTOR DATA SHEET \ MEMORY CMOS 4 x 2 M x 8 BIT SYNCHRONOUS DYNAMIC RAM CMOS 4-Bank x 2,097,152-Word x 8 Bit Synchronous Dynamic Random Access Memory n DESCRIPTION The Fujitsu MB81164842A is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

BSM200GA160D

Abstract: Ga-160
Contextual Info: SIEMENS IGBT Module BSM200 GA160 D 200ga16a doc VCE= 1600 V 'c = 275 A at Te =25°C le = 200 A at Tc =80°C • Power module • Single switch • Including fast free-wheel diodes • Package with insulated metal base plate Single switch Type Type Ordering code