100PJPD25 Search Results

Contextual Info: N AUER PHILIPS/DISCRETE b^E D bb 53 T 31 DDBDblS Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

BU2508A

Abstract: BY228 BU2508
Contextual Info: Product specification Philips Semiconductors Silicon diffused power transistor BU2508A GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to

1B-04

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520DW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers.

Contextual Info: bRE D N AMER PH ILIP S /D IS C R E TE • bb53R31 00304bQ Rlfl ■ P hilips Sem ico nd uctors Pro d uct Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

TRANSISTOR K555

Abstract: BUK555-100A fet junction transistor BUK555-100B T0220AB K-5551
Contextual Info: PHILIPS INTERNATIONAL hSE ]> M 711DflEb 0Db424b fl44 • P H I N Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of HDTV receivers and pc monitors.