100MHZ NPN TRANSISTOR POWER AMP Search Results

2SA1837

Abstract: 2SC4793 2SA1837 Toshiba
Contextual Info: TOSHIBA Discrete Semiconductors 2SC4793 Transistor Unit in mm Silicon NPN Epitaxial Planar Type Power Amplifier, Driver Stage Applications Features • High Transistion: fT = 100MHz • Complementary to 2SA1837 Absolute Maximum Ratings Ta = 25°C CHARACTERISTIC

2SC4433

Abstract: ITR06901 ITR06902 ITR06903 ITR06904 ITR06905 ITR06906
Contextual Info: Ordering number:ENN3553 NPN Epitaxial Planar Silicon Transistor 2SC4433 HF Amplifier Applications Features Package Dimensions • High power gain : PG=28dB typ f=100MHz . · High cutoff frequency : fT=750MHz typ. · Small Cob, Cre. unit:mm 2033A [2SC4433]

CZD1225

Abstract: CZD2983
Contextual Info: CZD2983 NPN Epitaxial Planar Silicon Transistor Elektronische Bauelemente DESCRIPTION The CZD2983 is designed for power amplifier and driver stage amplifier applications. D-Pack TO-252 FEATURES  High transition frequency：fT = 100MHz (Typ.)  Complements to CZD1225

Contextual Info: Ordering number:ENN3553 NPN Epitaxial Planar Silicon Transistor 2SC4433 HF Amplifier Applications Features Package Dimensions • High power gain : PG=28dB typ f=100MHz . · High cutoff frequency : fT=750MHz typ. · Small Cob, Cre. unit:mm 2033A [2SC4433]

EN3553

Abstract: 2SC4432 2SC4433 D2598
Contextual Info: Ordering number:EN3553 NPN Epitaxial Planar Silicon Transistor 2SC4433 HF Amplifier Applications Features Package Dimensions • High power gain : PG=28dB typ f=100MHz . · High cutoff frequency : fT=750MHz typ. · Small Cob, Cre. unit:mm 2033A [2SC4433] 2.2

Contextual Info: T O SH IB A 2SC2983 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2983 DRIVER STAGE AMPLIFIER APPLICATIONS. • • High Transition Frequency : fT=100MHz (Typ.) Complementary to 2SA1225 MAXIMUM RATINGS (Ta = 25°C)

a50l

Contextual Info: TOSHIBA TRANSISTOR SEMICONDUCTOR T O SH IB A TECHNICAL 2SC2983 DATA SILICON NPN EPITAXIAL TYPE PCT PROCESS (2SC2983) Unit in mm POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. • • High Transition Frequency : fr = 100MHz (Typ.) Complementary to 2SA1225

S9018

Abstract: S9018 TO92
Contextual Info: FORWARD INTERNATIONAL ELECTRONICS LID . S9018 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM /FM IF AMPLIFIER^LOCAL OSCILLATOR Package: TO-92 OF FM/VHF TUNER * High Current Gain Bandwidth Product fT=l 100MHz * High Total Power Dissipation: Pc=400mW

Contextual Info: KSC2310 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE POWER AMPLIFIER • Collector - Base Voltage V c b o =200V • Current Gain-Bandwidth Product fT=100MHz Typ ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage

KTC4793

Abstract: KTA1837
Contextual Info: SEMICONDUCTOR KTC4793 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATINS. A P S High Transition Frequency : fT=100MHz Typ. B E K G Complementary Pair with KTA1837. L ) R M J MAXIMUM RATING (Ta=25

transistor revers characteristic

Abstract: NF005 KSC1674 QDS4744 TRANSISTOR 100MHz
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSC1674 TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR • High Current-Gain-Bandwidth Product fT=600MHz iyp • High Power Gain Gpa=22dB at f=100MHz s ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol

KSC2310

Contextual Info: KSC2310 KSC2310 High Voltage Power Amplifier • Collector-Base Voltage : VCBO=200V • Current Gain Bandwidth Product : fT=100MHz TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

KSC2310

Contextual Info: KSC2310 KSC2310 High Voltage Power Amplifier • Collector-Base Voltage : VCBO=200V • Current Gain Bandwidth Product : fT=100MHz TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Contextual Info: KSC2310 KSC2310 High Voltage Power Amplifier • Collector-Base Voltage : VCBO=200V • Current Gain Bandwidth Product : fT=100MHz TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Contextual Info: SEMICONDUCTOR KTC4793 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATINS. A P S High Transition Frequency : fT=100MHz Typ. B E K G Complementary Pair with KTA1837. L ) R M J MAXIMUM RATING (Ta=25

2SC4399

Abstract: ITR06678 ITR06679 ITR06680 ITR06681 ITR06682
Contextual Info: Ordering number:ENN3020 NPN Epitaxial Planar Silicon Transistor 2SC4399 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions • High power gain : PG=25dB typ f=100MHz . · Ultrasmall-sized package permitting the 2SC4399applied sets to be made small and slim.

transistor c 4793

Abstract: transistor 4793 TOSHIBA C 4793 hfe 4793 2sc 4793
Contextual Info: TOSHIBA 2SC4793 Transistor Silicon NPN Epitaxial Planar Type Power Amplifier, Driver Stage Applications Features • High Transistion: fT = 100MHz • Com plem entary to 2SA1837 A bsolute M axim um Ratings Ta = 25°C SYMBOL RATING UNIT C ollector-B ase Voltage

Ksc1674

Contextual Info: KSC1674 NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92 • High Current-Gain Bandwidth Product fT=600MHz Typ • High Power Gain GPE=22dB at f=100MHz ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic

rf fairchild transistor 100mhz amplifier

Abstract: KSC2786 rf fairchild transistor 100mhz
Contextual Info: KSC2786 NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92S • High Current-Gain-Bandwidth Product fT=600MHz Typ • High Power Gain GPE=22dB at f=100MHz ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic

KTC4793

Abstract: KTA1837
Contextual Info: SEMICONDUCTOR KTC4793 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATINS. A C DIM A B C D E F P F U FEATURES E B ᴌHigh Transition Frequency : fT=100MHz Typ. S G ᴌComplementary Pair with KTA1837.

Contextual Info: KSC1674 NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92 • High Current-Gain Bandwidth Product fT>600MHz Typ • High Power Gain Gpe=22dB at f= 100MHz ABSOLUTE MAXIMUM RATINGS (TA-2 5 t:) C haracteristic

RF POWER TRANSISTOR 100MHz

Abstract: NPN Epitaxial Silicon Transistor silicon transistor KSC2786 high Power Amplifier 100mhz Transistor FT TO NPN 4V 5mA
Contextual Info: KSC2786 NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92S • High Current-Gain-Bandwidth Product f T=600MHz Typ • High Power Gain GPE=22dB at f=100MHz  ABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic

KSC2310

Contextual Info: KSC2310 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE POWER AMPLIFIER • Collector - Base Voltage VCBO=200V • Current Gain-Bandwidth Product fT=100MHz TO-92L ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage

Contextual Info: KSC2786 NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR • High Current-Gain-Bandwidth Product fT=600MHz iyp • High Power Gain Gp«=22dB at f=100MHz ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage