100M200M500M Search Results

102k1k

Abstract: 20M diode zener LDTDG12GPLT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPLT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)

Diode marking CODE 5M

Abstract: transistor collector diode protection RADIO FREQUENCY transistor marking CODE LDTDG12GPWT1G LDTDG12GPWT3G diode 50M marking code
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPWT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)

Diode marking CODE 5M

Abstract: diode 50M marking code LDTBG12GPWT1G transistor collector diode protection RADIO FREQUENCY transistor marking CODE
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTBG12GPWT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)

Contextual Info: Transistors Digital transistor built-in resistors Driver (60V,1A) DTDG14GP •F e a tu re s 1) •E xte rn a l dimensions (Units: mm) H ig h h F E . = 750 (Typ.) ( V c e / I c = 2V/0.5A) Low VcE(sat). ( I c / I b = 500mA/5mA) 3) B uilt-in zener dio d e fo r strong

20M diode zener

Abstract: 102k1k DTDG14GP T100
Contextual Info: DTDG14GP Transistors Digital transistor built in resistor and zener diode Driver (60V, 1A) DTDG14GP !External dimensions (Units : mm) 0.5±0.1 4.5+0.2 −0.1 1.5 +0.2 −0.1 4.0±0.3 2.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 !Features 1) High hFE. (typ. hFE =750 VCE/IC=2V/0.5A)

Contextual Info: DTDG14GP Transistors Digital transistor built in resistor and zener diode Driver (60V, 1A) DTDG14GP !External dimensions (Units : mm) 0.5±0.1 4.5+0.2 −0.1 1.5 +0.2 −0.1 4.0±0.3 2.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 !Features 1) High hFE. (typ. hFE =750 VCE/IC=2V/0.5A)

LDTBG12GPLT1G

Abstract: 102k1k marking 20M resistor 20M diode zener
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTBG12GPLT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)

20M diode zener

Abstract: 102k1k LDTDG12GPT1G SC-89 transistor collector diode protection
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)

DTDG14GP

Abstract: T100 sc-62 zener
Contextual Info: DTDG14GP Transistors 1A / 60V Digital Transistor with built-in resistor and zener diode DTDG14GP zExternal dimensions (Unit : mm) zApplications Driver 1.5 2.5 4.0 zFeatures 1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)

102k1k

Abstract: LDTBG12GPT1G SC-89
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTBG12GPT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)