100IB1 Search Results

2SC4390

Abstract: ITR06668 ITR06669 VEBO-15V
Contextual Info: 2SC4390 Ordering number : EN2958B SANYO Semiconductors DATA SHEET 2SC4390 NPN Epitaxial Planar Silicon Transistor High hFE, AF Amplifier Applications Features • • • • • Adoption of MBIT process. High DC current gain hFE=800 to 3200 . Large current capacity (IC=2A).

Contextual Info: NTE2505 Silicon NPN Transistor Low Frequency, General Purpose Amp Features: D High Current Capacity D High DC Current Gain D Low Collector Emitter Saturation Voltage D High Emitter Base Breakdown Voltage Absolute Maximum Ratings: TA = +25°C unless otherwise specified

2SC4204

Abstract: ITR06479 ITR06480 ITR06481
Contextual Info: Ordering number:ENN2531A NPN Epitaxial Planar Silicon Transistor 2SC4204 High-hFE, AF Amplifier Applications Applications Package Dimensions • AF amplifier, various drivers. unit:mm 2003B Features [2SC4204] 5.0 4.0 4.0 5.0 · Adoption of MBIT process. · High DC current gain hFE=800 to 3200 .

VEBO-15V

Abstract: 2SC4736 ITR07504 ITR07505
Contextual Info: 2SC4736 Ordering number : EN3975A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC4736 High hFE, Low-Frequency General-Purpose Amplifier Applications Features • • • • • • • • Large current IC=2A . Adoption of MBIT process.

2SC5069

Abstract: ITR07888 ITR07889 ITR07890
Contextual Info: Ordering number:ENN4509 NPN Epitaxial Planar Silicon Transistor 2SC5069 Low-Frequency General-Purpose Amplifier, Driver Applications Features Package Dimensions unit:mm 2038A [2SC5069] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • High current capacity. · Adoption of MBIT process.

2SC5060

Abstract: 2SC5060 equivalent
Contextual Info: 2SC5060 Transistors Power transistor 90±10V, 3A 2SC5060 zExternal dimensions (Unit : mm) zFeatures 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to “L”

Contextual Info: Ordering number:ENN3975 NPN Epitaxial Planar Silicon Transistor 2SC4736 High hFE, Low-Frequency General-Purpose Amplifier Applications Package Dimensions unit:mm 2084B [2SC4736] 4.5 1.9 10.5 2.6 1.4 8.5 1.2 1.0 • Large current IC=2A . · Adoption of MBIT process.

22505TN

Abstract: 1A marking 2SC5069 ITR07888
Contextual Info: 2SC5069 Ordering number : EN4509A SANYO Semiconductors DATA SHEET 2SC5069 NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier, Driver Applications Features • • • • • High current capacity. Adoption of MBIT process. High DC current gain.

2SC4480

Abstract: ITR07096 ITR07097 ITR07098 ITR07099
Contextual Info: Ordering number:ENN3234 NPN Epitaxial Planar Silicon Transistor 2SC4480 Low-Frequency General-Purpose Amplifier, General Driver Applications Features Package Dimensions • Large current capacity. · Adoption of MBIT process. · High DC current gain. · Low collector-to-emitter saturation voltage.

2SC4390

Abstract: ITR06668 ITR06669 ITR06670 ITR06671
Contextual Info: Ordering number:ENN2958A NPN Epitaxial Planar Silicon Transistor 2SC4390 High-hFE, AF Amplifier Applications Features Package Dimensions unit:mm 2038A [2SC4390] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • Adoption of MBIT process. · High DC current gain hFE=800 to 3200 .

2SC5060

Abstract: 9010V
Contextual Info: Power transistor 9010V, 3A 2SC5060 Dimensions (Unit : mm) Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to “L” loads. 4) Darlington connection for high DC current gain.