10096 Search Results

Contextual Info: BluetoothTM/802.11 a & b Antenna_ Part Number 100961 Features: * Wide bandwidth and high gain i n a compact size * Enhanced hemispherical pattern improves RF link reliability of portable devices. * Surface- mount design available in tape- and- reel packaging for low- cost automated pick- and-place

Contextual Info: 10096_DATA SHEETS_US_10/02 30/10/02 9:54 am Page 1 www.hamlin.com 55085 Mini Vane Hall Effect Sensor Features and Benefits Features Benefits Applications • Sensor and magnet contained in a single housing • Sensor operates when ferrous vane passes through slot

BA 5408

Abstract: JANTX1N974B-1
Contextual Info: Zener Regulator Diodes Scottsdale ' Package Outline ; D O-213AA Type SM Scottsdale DO-7 STD Scottsdale DO-35 STD SM I ' Power! Vz Mil Data Spec Sheet ID W , (V) 117 : izt (mA) (n ) 1 Zzk (£1! VR (V> (+/-%) 22.8 5 5 8301 0.4 30 4.2 49 1000 10096 0.4 30 4.2

10A125V

Contextual Info: AMERICAN ELECTRONIC JUMPER CORD SET 10095 10096 2 E U PART NUMBER CORD LENGTH DESCRIPTION NOMINAL O.D. RATING COLOR APPROVALS 10095 3'3" 1.0M 18/3 SVT 41/34B.C. .255 (6.5) 10A 250V BLACK 10096 7'6"(2.3M) 18/3SVT 41/34B.C. .255 (6.5) 10A250V BLACK AMERICAN CORD SET

Contextual Info: 10096_DATA SHEETS_US_10/02 30/10/02 9:54 am Page 4 www.hamlin.com 55140 Flange Mount Hall Effect Sensor Features and Benefits Features Benefits Applications • Magnetically operated position sensor • Digital, latching or programmable analogue types available

Contextual Info: Doc No. TT4-EA-10096 Revision. 3 Product Standards MOS FET MTM981400BBF MTM981400BBF Silicon P-channel MOSFET Unit: mm 5.0 For switching 0.4 8 7 6 5 1 2 3 4 5.0 6.0 • Features  Low drain-source On-state Resistance RDS on typ = 28 m (VGS = -4.5 V)

MTM981400BB

Contextual Info: Doc No. TT4-EA-10096 Revision. 2 Product Standards MOS FET MTM981400BBF MTM981400BBF Silicon P-channel MOSFET Unit: mm 5.0 For switching 0.4 8 7 6 5 1 2 3 4 5.0 6.0 • Features  Low drain-source On-state Resistance RDS on typ = 28 m (VGS = -4.5 V)

Contextual Info: 10096_DATA SHEETS_US_10/02 30/10/02 9:54 am Page 3 www.hamlin.com 55110 L.E.D. Flange Mount Hall Effect Sensor Features and Benefits Features Benefits • Magnetically operated position sensor • Digital or latching types available • Integral LED • Medium or high sensitivities

A040

Contextual Info: Extract from the online catalog UK 6-FSI/C-LED12 Order No.: 3001925 The illustration shows version UK 6-FSI/C Flat-type fuse terminal block, cross section: 0.2 - 6 mm², AWG: 26 - 8,

transistor cms 6BW

Abstract: g2v2 relay 4 digit 7 segment calculator lcd display pin BIT 31936 g2v2 transistor 5bw A7102A 6BW 87 automatic dialer sd 7402
Contextual Info: DEFINITY Enterprise Communications Server and System 75 and System 85 Terminals and Adjuncts Reference 555-015-201 Comcode 108603994 Issue 11 December 1999 Copyright  1999, Lucent Technologies All Rights Reserved Printed in USA Notice Every effort was made to ensure that the information in this book was

HA-5151

Contextual Info: H A -5151/883 ffl h a r r is Single, Low Power Operational Amplifier F eatures D escrip tio n • T his C irc u it Is P roce ssed In A c c o rd a n c e to M ll-S td 883 an d is Fu lly C o n fo rm a n t U n d e r th e P ro visio n s o f P aragraph 1.2.1. The HA-5151/883 single operational am plifier is part of a

KFG2G16Q2A

Abstract: 0307h 0719h 63FBGA KFG2G16 onenand oneNand flash
Contextual Info: OneNAND2G KFG2G16Q2A-DEBx OneNAND4G(KFH4G16Q2A-DEBx) FLASH MEMORY KFG2G16Q2A KFH4G16Q2A 2Gb OneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

SPRU099

Abstract: SPRU103 TMS320 mp 1009e SPRU099A
Contextual Info: TMS320C5xx C Source Debugger User’s Guide 1994 Microprocessor Development Systems Printed in U.S.A., June 1994, reprinted October 1997 SDS SPRU099A TMS320C5xx C Source Debugger 1994 User’s Guide TMS320C5xx C Source Debugger User’s Guide SPRU099 June 1994

63FBGA

Abstract: KFG1G16Q2B onenand
Contextual Info: OneNAND1Gb KFG1G16Q2B-DEBx FLASH MEMORY KFG1G16Q2B 1Gb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

TC551001BFTI

Contextual Info: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC551001BPI/BFI/BFTI/BTRI-85L/1 OL SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551001BPL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology,

buzh

Abstract: jumo 60751 DIN EN 60 751
Contextual Info: tóÍlh:*iír1í^jtíS503^ fcìg: 0086-0411 6666050 f t S : (0086-0411)6666053 6666051 6666052 (JUMO) E-ma iI: info@jumo-ch ina. com Website:http://www.jumo-china. com 2102 iiA5tiivi.pi, m m m m * ìr n lÉ 5 È H - 5 0 - + 6 0 0 ° c * B, BUZ, BUZH. BBKMÌIt^s

LA7055

Abstract: LA7056 cs 1694 cs 1694 eo IRcw75 mPC 514 B-01 ILA7056
Contextual Info: N q^ 2838 - x - X t < fz ë ^ ? L t 'A X "S, L A 7 5 5 , 7 5 6 - V ^ U r ^ f - V \\ * Ä ». « / / / L A ? 0 5 5 /5 6 á * ^ tt« |^ I C T 3 5 U S V * » ? . m "' 4Sk J F / / , Jg « (3 :S E P -1 6 ¿ D IP -íé # 3 5 5 0 A'' / » C ® Í^ Í0 (ií& ffl(5 lí8 í»

FLTR100V10

Abstract: JW040A0Y JW040A0Y1
Contextual Info: Data Sheet April 2008 JW040A0Y Power Modules; dc-dc Converters: 36 Vdc to 75 Vdc Input, 1.8 Vdc Output; 40 A; 72 W Features n The JW040A0Y Power Modules use advanced, surface-mount technology and deliver high-quality, efficient, and compact dc-dc conversion.

Contextual Info: D28 HI-CON Eurocard DIN Connectors_ Standard DIN Type C and Half C Series 100 Male Compliant without pressure plate with pressure plate Performance Data MATERIALS Insulator Material: Glass-Filled Polyester' Color Gray U.L. Flammability 94V-0 Contact Material: Copper Alloy

Samsung oneNand Mux

Abstract: samsung 1Gb nand flash SAMSUNG 256Mb NAND Flash Qualification Report KFM1216Q2M 48FBGA 8017h 2112b 1001Ah 803FH samsung 2GB Nand flash 121 pins
Contextual Info: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product Part No. VCC(core & IO) PKG MuxOneNAND512 KFM1216Q2M 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15th, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

transistor jsu

Contextual Info: H A R R I S SEfllCOND SE CT OR a 1 0 E d | 4 3 0 B 57 1 h HARRIS a 0015^73 7 | - 2 5 4 2 / 8 8 3 Wideband, High Slew Rate, High Output Current, Operational Amplifier January 1989 Features Description • This C ircuit Is Processed In Accordance to M ll-S td 883 and Is Fully Conform ant Under the Provisions o f

Contextual Info: BC BMOD Power Series 15v BOOSTCAP Ultracapacitors p Series: BMOD Power 15 Volt Module Features: » 15 V working voltage » individually balanced cells » Rugged, fully enclosed system » screw mountable » Module-to-module balance cable included » Ul Recognized

ssq21635

Abstract: MIL-C-81582 M81582 D38999/49 NATC07 test required
Contextual Info: Qwik Connect GLENAIR n A p ril 2011 n VOLUME 15 n NUMBER 2 Connector Reference Guide QwikConnect WELCOME INTERCONNECT PROFESSIONALS! Series 80 “Mighty Mouse” Connectors H igh performance MS type electrical connectors have been around since the late ’30s.

M39029/88

Abstract: 40M38298 D38999/49
Contextual Info: Qwik Connect GLENAIR n A p ril 2011 n VOLUME 15 n NUMBER 2 Connector Reference Guide QwikConnect WELCOME INTERCONNECT PROFESSIONALS! H igh performance MS type electrical connectors have been around since the late ’30s. As military and aerospace electronics became more prevalent and sophisticated, so did