1008 TRANSISTOR Search Results

1008 transistor

Contextual Info: IMAGE SENSOR CCD area image sensor S7960/S7961-1008 Back-thinned FFT-CCD for high-speed application S7960/S7961-1008 are FFT-CCD area image sensors specifically designed for high speed operation. A high frame rate is attained by employing a wide band width on-chip amplifier. In binning operation, S7960/S7961-1008 can be used as a linear image sensor having a long aperture in the

Contextual Info: IMAGE SENSOR CCD area image sensor S7960/S7961-1008 Back-thinned FFT-CCD for high-speed application S7960/S7961-1008 are FFT-CCD area image sensors specifically designed for high speed operation. A high frame rate is attained by employing a wide band width on-chip amplifier. In binning operation, S7960/S7961-1008 can be used as a linear image sensor having a long aperture in the

S7960-1008

Abstract: S7961-1008
Contextual Info: IMAGE SENSOR CCD area image sensor S7960/S7961-1008 Back-thinned FFT-CCD for high-speed application S7960/S7961-1008 are FFT-CCD area image sensors specifically designed for high speed operation. A high frame rate is attained by employing a wide band width on-chip amplifier. In binning operation, S7960/S7961-1008 can be used as a linear image sensor having a long aperture in the

Contextual Info: T O S H IB A RN1007~RN1009 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1007, RN 1008, RN1009 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • • • • . 5.1 MAX. With Built-in Bias Resistors

OB5013

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSA708 LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING TO -92 • C om plem ent to KSC 1008 • Col lector-Base Voltage: VCbo= -80V • C ollector D issipation: Pc=8 0 0m W ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic

Contextual Info: KSR2008 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In T O -92 • Sw itching circuit, Inverter, Interface circuit, Driver C ircuit • B uilt in bias R esistor ^ = 4 7 X 1 2 , R2=22Ki2) • C om plem ent to KSR 1008 ABSOLUTE MAXIMUM RATINGS (T a=25°C)

Contextual Info: New 1008-type Molded Lead-less 4-pin Transistor/Diode Series • Overview Unit:mm 0.020 ± 0.010 3 2 0.80 ± 0.05 4 1 0.60 ± 0.05 1.00 ± 0.05 ■ Features 1 ● Assembly process that does not use lead frame. ● Lead Pb -free design and significant reduction in discarded plastics for

pmi pm1008

Abstract: PM1008GZ
Contextual Info: PM-1008 PMI LOW-POWER, PRECISION EXTERNALLY-COMPENSATED OPERATIONAL AMPLIFIER P r e c i s i o n M o n o l i t h i c * Inc. FEATURES is greatly improved. Exceptionally low bias currents of only ±80pA, typical, over the full military temperature range combine

Contextual Info: R aM T R O N \ FM 1008/1108/1208/1308/1408 FRAM 1,024-16,384-Bit Nonvolatile Static RAM Family c o f^ p o ira rio M Product Preview F e a tu re s • Nonvolatile CMOS Static RAM with > 10 Year Data Retention Without Power • Endurance Rated at >1010 Read/Write Cycles

2SB1008

Contextual Info: Is ~ 7 > V $ /T ra n sisto rs 2SB 1008 2SB1008 PNP h> i5;Ji>jSW^]iill iffl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Darlington Transistor • • 1 # - ' ) > W f ^ j i l S l / D i m e n s i o n s U n it : m m ) h > t ^ T - h FET'Æ >5o 2)BEfôlCjfô4kQCD$ÊÎ)t£F*3j&o >Sjf$

FM1108

Abstract: 512X8 from 128x8 ram FM1208
Contextual Info: R AMT RON CORP 2 QE RaM IRO N X c 0 « \ P 0 R a T i0 N D • 7SSSQ1S Q00DDti3 7 ■ FM 1008/1108/1208/1408 FRAM : . . . . 1,024-Bit to 16,384-Bit N onvolatile S tatic RAM Fam ily Product Preview _T - ¥ A - 2 3 - ! Z Features • True Nonvolatile CMOS Static RAM with > 10 Year Data

Contextual Info: V e r s io n 2 . 0 , 2 0 M a r 2 0 1 3 CoolSET -F3R80 I C E3 AR 1008 0JZ -T O f f -Lin e S MP S Cur ren t M od e Co n tr olle r wit h in t eg ra te d 8 00 V Co o lMO S ® a n d S ta rt up c ell b ro wn ou t & fr eq ue n c y jit t er in DI P -7 P o w e r M a n a ge m e n t & S u p p ly

LT318A

Contextual Info: LT1008 Picoamp Input Current, Microvolt Offset, Low Noise Op Amp DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ Guaranteed Bias Current TA = 25°C: 100pA Max TA = – 55°C to 125°C: 600pA Max Guaranteed Offset Voltage: 120µV Max Guaranteed Drift: 1.5µV/°C Max

TRANSISTOR 2N3609

Abstract: KELVIN-VARLEY DIVIDER 2N3609 dp311 820nV 2N4393 LT318A OFM-1A FN507 LT1008
Contextual Info: LT1008 Picoamp Input Current, Microvolt Offset, Low Noise Op Amp DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ Guaranteed Bias Current TA = 25°C: 100pA Max TA = – 55°C to 125°C: 600pA Max Guaranteed Offset Voltage: 120µV Max Guaranteed Drift: 1.5µV/°C Max

Contextual Info: IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This

la 4127

Contextual Info: IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This

transistor 1107

Abstract: 4511 mosfet
Contextual Info: CCD area image sensor S10140/S10141 series Low readout noise, high resolution pixel size: 12 m The S10140/S10141 series is a family of back-thinned FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, the S10140/S10141 series can be used as a linear image sensor having a

transistor 1107

Abstract: b298
Contextual Info: CCD area image sensor S10140/S10141 series Low readout noise, high resolution pixel size: 12 Njm S10140/S10141 series is a family of back-thinned FFT-CCD image sensors speci¿cally designed for low-light-level detection in scienti¿c applications. By using the binning operation, S10140/S10141 series can be used as a linear image sensor having a

transistor 1107

Contextual Info: IMAGE SENSOR CCD area image sensor S10140/S10141 series Low readout noise, high resolution pixel size: 12 µm S10140/S10141 series is a family of back-thinned FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S10140/S0141 series can be used as a linear image sensor having a long aperture in the direction of

Contextual Info: IMAGE SENSOR CCD area image sensor S10140/S10141 series Low readout noise, high resolution pixel size: 12 µm S10140/S10141 series is a family of back-thinned FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S10140/S0141 series can be used as a linear image sensor having a long aperture in the direction of

F98S

Abstract: xpc860 68LC060 A113 J24A XPC850 Motorola, HBM, 1kv
Contextual Info: Freescale Semiconductor, Inc. Reliability Report for Freescale Semiconductor, Inc. Networking Communication Microprocessors XPC850 Rev 0.3 XPC860 XPC860T 0.42m Single Poly Wafer Fabrication Process Revision: 5/99 For More Information On This Product, Go to: www.freescale.com

S7031-0908S

Abstract: S7032
Contextual Info: CCD area image sensors S7030/S7031 series Back-thinned FFT-CCD The S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, the S7030/S7031 series can be used as a linear image sensor having a long aperture

Contextual Info: IMAGE SENSOR CCD area image sensor S7030/S7031 series Back-thinned FFT-CCD S7030/S7031 series is a family of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, S7030/S7031 series can be used as a linear image sensor having a long aperture in the direction of the device length. This

npn transistor data

Contextual Info: 2N3866AUB Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose high frequency • VHF-UHF amplifier transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3866AUBJ