10047 Search Results

Contextual Info: H I T A C H I / LOGIC/ARRAYS/MEN TS D Ë | 44=11,203 0010=135 b | ~ 92D H M I 0 0 4 7 4 , H M 1 4 7 4 F 10932 -^ T -4 6 -2 3 -0 8 1 0 2 4 - w o r d x 4 - b i t F u lly D e c o d e d R a n d o m A c c e s s M e m o r y The H M 100474 is a 1024-words x 4-bit, read/write, random access

Contextual Info: ECL 4096-B IT BIPOLAR SELF-TIMED RANDOM ACCESS MEMORY FU JITSU 100476RL-9 4096-BIT BIPOLAR SELF-TIMED RANDOM ACCESS MEMORY D e cem b er, 1988 Edition 1.0 The Fujitsu M BM 100476RL-9 is fully d eco ded 4 0 9 6 -b lt ECL s e lf-tim e d re a d /w rite random acce ss m e m o ry S T R A M . The device Is organtaed as 1024 w ords by 4 bits,

4096-BIT

Abstract: 100470AF 100470F 4096
Contextual Info: BIPOLAR M E M O R Y DIVISION M AY 1982 4096-BIT ECL RAM 4096 x 1 100470/100470A A dvan ce Information DESCRIPTION FEATURES The 100470/100470A device is a 4096 w o rd s by 1 b it fu lly decoded R ead/W rite Random A cce ss M em ory, d e sig n e d fo r h igh speed scra tch pad, c o n tro l, and b u f­

100474A

Contextual Info: Signetics 100474A 4K-Bit ECL Bipolar RAM Preliminary Specification Bipolar M em ory Products PIN CONFIGURATION DESCRIPTION FEATURES The 100474A device is a 1024 words by 4 bits fully decoded Read/W rite Ran­ dom Access Memory, designed for high speed scratch pad, control, and buffer

BD1020HFV

Contextual Info: Small and High Accuracy Temperature Sensor IC Series Analog Output Temperature Sensor IC BD1020HFV No.10047EBT02 ●Description Low quiescent current 4µA and high accuracy temperature sensor Detecting temperature by itself, output voltage appears linearly along the temperature.

Contextual Info: H M 100470 4 0 9 6 - word x 1-b it Fully Decoded Random A ccess Memory The 100470 is a 4096-words x 1-bit, read/write, random access memory developed for high speed systems such as scratch pads and control buffer storages. The fabrication process is the Hitachi's low capacitance, oxide

MBM100474A

Abstract: 100474a-15
Contextual Info: ECL 4096-B IT BIPOLAR RANDOM ACCESS MEMORY FU JITSU 4096-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM 100474A is fu lly decoded 409 6 -b it ECL read/w rite random access m em ory designed fo r high-speed scratch pad, co ntro l and buffer storage applications. This device is organized as 1024 words by 4 bits, and it features

24cc02

Abstract: 100474A-5 Fujitsu b-1100
Contextual Info: FU JITSU MI CRO E L E C T R ON I C S 3 7 4=i7fciE 0000235 b 23E D n ~ -*4 fe -Z 3 > -0 8 FU JIT SU EC0Ç4O96-BlllfëÇf BIPOËAR/ RANDOMí ACCES£|MEMOF@É MBM 100474A-5 MBM 100474A-7 June 1987 Edition 1.Û 4096-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM 100474A is fu lly decoded 4096-bit ECL read/write random

BD102

Abstract: BD1020HFV
Contextual Info: Small and High Accuracy Temperature Sensor IC Series Analog Output Temperature Sensor IC BD1020HFV No.10047EBT02 ●Description Low quiescent current 4µA and high accuracy temperature sensor Detecting temperature by itself, output voltage appears linearly along the temperature.

J18A

Contextual Info: December 1986 DM 100470/DM 100470A 4096-Bit 4096 x 1 ECL RAMs General Description Features The 100470/100470A is a fully decoded 4096-bit, 100K compatible, ECL read/write random access memory designed for high-speed scratch pad and buffer storage ap­

Contextual Info: H M 1 0 0 4 7 4 , H M 10 0 4 7 4 F 1 0 2 4 - word x 4-bit Fully Decoded Random A c c e s s M em ory The H M 100474 is a 1024-words x 4-bit, read/write, random access memory developed for high speed systems such as scratch pads and control/buffer storages.

Contextual Info: NEC 100470 4,096 X 1-BIT 100K ECL RAM NEC Electronics Inc. Description Pin Configuration The ;iP B 100470 ¡s a very high-speed 100K interface EC L RAM with full voltage and temperature compensation. The device is organized as 4K words by 1 bit, and is

bm1004

Contextual Info: FU JIT SU ECL 4096-B IT BIPOLAR SELF-TIMED RANDOM ACCESS MEMORY 100476LL-9 Decem ber, 1988 Edition 2.0 4096-BIT BIPOLAR SELF-TIMED RANDOM ACCESS MEMORY The Fujitsu M B M 100476LL-9 Is fully decoded 4096-b lt EC L self-tim ed read/w rlte random access m em ory S TR A M . The device Is organized as 1024 words by 4 bits,

MBM100474A

Abstract: FPT-24CC02 100474A
Contextual Info: ECL 4096-BIT BIPOLAR RANDOM ACCESS MEMORY F U JIT S U MBM 100474A -10 MBM 100474A -15 August 1985 E dition 2.0 4096-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM 100474A is fully decoded 4096-bit ECL read/write random access memory designed for high-speed scratch pad. control and buffer storage

32KX8

Abstract: STK16C88
Contextual Info: Simtek Corporation Product Discontinuance Home page: http://www.simtek.com E-mail: information@simtek.com 4250 Buckingham Drive, Suite 100 Colorado Springs CO 80907 USA 719-531-9444 fax 719-531-9481 PCN # 10047 01 PCN Status PCN Date October 04, 2006 PCN Title

Contextual Info: 100474/100474A National /2/m Corporation Semiconductor September 1985 DM 100474/DM 100474A 1024 x 4 4096-Bit, 100k ECL RAM General Description Features The 100474 is a 4096-bit read/write random access memory, organized in the popular 1024 words by 4-bit con­

IPB100

Contextual Info: NEC /100470 4,096 X 1-BIT 100K ECL RAM NEC Electronics Inc. Description Pin Configuration Th e /iP B 100470 is a very high-speed 100K in terfac e E C L RAM w ith full vo ltag e an d te m p era tu re com p ensatio n. 18-Pin Cerdip Th e d e v ic e is org a n ize d as 4 K w o rd s by 1 bit, an d is

Contextual Info: Signetics 1 0 0 4 7 4 A 4K-Bit ECL Bipolar RAM Preliminary Specification Bipolar Memory Products PIN CONFIGURATION DESCRIPTION FEATURES The 100474A device is a 1024 words by 4 bits fully decoded Read/Write Ran­ dom Access Memory, designed for high speed scratch pad, control, and buffer

Contextual Info: 6 Rev APPROVED: DATE:_ Description RELEASED AW 0# 10047 • Date 2/22/10 Appr TITLE: .350 [8.89] .050 [1.27]-1 / 0.035 [0.9 1.90] r . ,0. .3C" 2 4 6 8 .100 [2.54] O O G- r 3 5 7 ! [8.89] B SPECIFICATIONS: Material: Insulator: PBT, glass reinforced , thermoplastic, rated UL 94V-0

Contextual Info: * * ¡y SYNERGY SY 100474-5 SY101474-5 100474-6 S Y 101474-6 „ SEMICONDUCTOR DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Address access time, tAA: 5/6ns max. Chip select access time, tAC: 3/5ns max. Write pulse width, tww: 5/8ns min.

1G04

Abstract: HM100474 910U
Contextual Info: 100474-8, 100474-IO-100474F-8, 100474F-10 1 0 2 4 - w ord x 4 - b i t Fully D e c o d e d R a n d o m A c c e s s M e m o ry The H M 100474 is E C L 100k compatible, 1024-words x 4-bit, read write, random access memory developed for high speed systems such

Contextual Info: NEC NEC Electronics Inc. /100470 4,096 x 1-BIT 100K ECL RAM Description Pin Configuration The jiPB 100470 is a very high-speed 100K interface ECL RAM with full voltage and temperature compensation. The device is organized as 4K words by 1 bit, and is designed w ith an open em itter output noninverted for

Contextual Info: Extract from the online catalog WSN 4-6 This item is no longer available. Should you have any questions, please contact our Sales Team. Order No.: 1004704 The illustration shows version WS 4- 8

Contextual Info: S ig n e t ic s 1 0 0 4 7 0 A 4K-Bit ECL Bipolar RAM Preliminary Specification Bipolar Memory Products PIN CONFIGURATION DESCRIPTION FEATURES The 100470A device is a 4096 words by 1 bit fully decoded Read/Write Random Access Memory, designed for high speed scratch pad, control, and buffer