1000V 3A DIODE Search Results

STP3NB100FP

Abstract: STP3NB100
Contextual Info: STP3NB100 STP3NB100FP N-CHANNEL 1000V - 5.3Ω - 3A TO-220/TO-220FP PowerMesh MOSFET PRELIMINARY DATA TYPE VDSS RDS on ID STP3NB100 1000 V <6Ω 3A STP3NB100FP 1000 V <6Ω 3A • ■ ■ ■ ■ TYPICAL RDS(on) = 5.3Ω EXTREMELY HIGH dv/dt CAPABILITY

GF30D

Contextual Info: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 3.0A GF30DL THRU GF30ML VF < 0.91V @IF = 3A FEATURES Lead free product, compliance to RoHS GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction Ideal for surface mount automotive applications

Contextual Info: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 3.0A GF30DLH THRU GF30MLH VF < 0.91V @IF = 3A FEATURES Halogen-free type Lead free product, compliance to RoHS GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction Ideal for surface mount automotive applications

T3N100

Abstract: IXTA3N100D2 3n100 ixta3n100 IXTP3N100D2
Contextual Info: Preliminary Technical Information IXTA3N100D2 IXTP3N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 1000V 3A 5.5Ω Ω N-Channel TO-263 AA (IXTA) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX G Maximum Ratings S 1000 V Continuous ±20 V VGSM

Contextual Info: Advance Technical Information IXTA3N100D2 IXTP3N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 1000V 3A 5.5Ω Ω N-Channel TO-263 AA (IXTA) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ

Contextual Info: VDSX ID on IXTA3N100D2 IXTP3N100D2 Depletion Mode MOSFETs RDS(on) = > ≤ 1000V 3A 6Ω Ω N-Channel TO-263 AA (IXTA) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX G Maximum Ratings S 1000 V Continuous ±20 V VGSM Transient ±30 V PD TC = 25°C 125

IXTA3N100D2

Contextual Info: Depletion Mode MOSFETs IXTA3N100D2 IXTP3N100D2 VDSX ID on RDS(on) = > ≤ 1000V 3A 6Ω Ω N-Channel TO-263 AA (IXTA) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX G Maximum Ratings S 1000 V Continuous ±20 V VGSM Transient ±30 V PD TC = 25°C 125

T3N100

Abstract: IXTA3N100D2 82709 IXTP3N100D2 3N100D2 T3N1 IXTP3N100
Contextual Info: Depletion Mode MOSFETs IXTA3N100D2 IXTP3N100D2 VDSX ID on RDS(on) = > ≤ 1000V 3A 5.5Ω Ω N-Channel TO-263 AA (IXTA) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX G Maximum Ratings S 1000 V Continuous ±20 V VGSM Transient ±30 V PD TC = 25°C 125

D3UB100

Contextual Info: D3UB05 THRU D3UB100 桥式整流器 Bridge Rectifier •特征 Features ● Io ■外形尺寸和印记 Outline Dimensions and Mark 3A D3K VRRM 50V~1000V ● 玻璃钝化芯片 Glass passivated chip ● 耐正向浪涌电流能力高 High surge forward current capability

Contextual Info: KBP3005 THRU KBP310 桥式整流器 Bridge Rectifier •特征 Features ● Io ■外形尺寸和印记 Outline Dimensions and Mark 3A KBP VRRM 50V~1000V ● 玻璃钝化芯片 Glass passivated chip ● 耐正向浪涌电流能力高 High surge forward current capability

10086B

Contextual Info: • R W .\A ADVANCED A P T 10086B V F R pow er Te c h n o l o g y “ 1000v POWER MOS V i 3a 0.860Q FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: • R A dvanced W .\A APT10086B VR pow er Te c h n o lo g y " 1000v i 3a 0.860Q POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®

SR506 Diode

Abstract: diode 6A 1000v SM4007 Diode Diode SR360 diode her307
Contextual Info: Room I, Floor 4, 13 Yip Fung Street, Hong Kong Tel: +86 769 8118 8110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Rectifier List Diode Rectifier Diode Rectifier M7 SMD4001-4007 Diode SR560 (5A 60V) Bulk RoHS. DO-27 S1A -S1M Diode UF4004 (1А 400V) Bulk RoHS. DO-41

2510W

Abstract: RS1M diode
Contextual Info: Email: info@kingtronics.com Web: www.kingtronics.com Tel: +86 769 81188110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Bridge Rectifier List UL ISO Manufacturer since 1990 Diode Recitifer M7 DO-214AC (1A 1000V)SMA Bridge Rectifier ABS2-ABS6; ABS8; ABS10

diode 0.2 V 1A

Contextual Info: IKB01N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies G 2nd generation HighSpeed-Technology for 1200V applications offers:

Contextual Info: IKP01N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies G E nd 2 generation HighSpeed-Technology

P-TO-247-3-1

Abstract: smps* ZVT Electronic ballast 40W IKB03N120H2 1000v 3a diode Electronic ballast 220 v 40W f 9222 l Q67040-S4594 IKP03N120H2 IKW03N120H2
Contextual Info: IKP03N120H2, IKW03N120H2 IKB03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter C G 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440

QCA50AA100

Contextual Info: TRANSISTOR MODULE QCA50AA100 UL;E76102 （M） QCA50AA100 is a dual Darlington power transistor module which has series- connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from

GP-30DL

Abstract: GP30DL GP30ML
Contextual Info: ZOWIE Low VF Rectifier Diode GP30DL THRU GP30ML Low VF Rectifier Diode VF < 0.90V @IF = 3A IFSM = 140Amp FEATURES GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead free product, compliance to RoHS Low forward voltage drop

GP-30DL

Abstract: 30DL
Contextual Info: ZOWIE Low VF Rectifier Diode GP30DLH THRU GP30MLH Low VF Rectifier Diode VF < 0.90V @IF = 3A FEATURES IFSM = 140Amp Halogen-free type GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead free product, compliance to RoHS

Contextual Info: S150J R THRU S150Q(R) DACO SEMICONDUCTOR CO., LTD. STANDARD RECOVERY DIODES STUD TYPE 150A Features 150Amp Rectifier 600~1200 Volts High Surge Capability Types up to 1200V VRRM 205AA(DO-8) Maximum Ratings Operating Temperature: -65 Storage Temperature: -65

Contextual Info: T R A N S IS T O R M O D U LE QCA150AA100 UL;E76102 M Q C A 1 5 0 A A 1 0 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. Th e mounting base o f the module is electrically isolated

smd diode sk14

Abstract: s250 bridge rectifier S250 DIOTEC TVS 600V smd S250 SLIM SK34SMA TRANSISTOR S250 Schottky Diode 40V 1A bridge smd diode s40 LED buck converter 3A
Contextual Info: Application Note Diotec Products for Power LED Lamps – Halogen and CFL Retrofits Diotec Products for Power LED Lamps – Halogen and CFL Retrofits High current LEDs are considered the light source of the future. They offer a much higher efficiency than halogen lamps and this is where most of the initial products