1000V, NPN 8A Search Results

NTE2311

Abstract: npn 1000V 15A NPN Transistor VCEO 1000V
Contextual Info: NTE2311 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2311 is a silicon NPN transistor in a TO218 type case designed for use in high voltage, high speed switching applications. Features: D High Blocking Capability: VCEX = 1000V

triac mw 131 600d

Abstract: 65n06
Contextual Info: / 20 13 -2 01 4 Nell,your reliable green partner Europe North America China Taiwan ,Taipei Africa South America Oceania Evolving green Innovation and Future Worldwide Presence Headquarter TEL FAX E-Mail Nell semiconductor Taiwan,Taipei +886-2-26474181 +886-2-26429717

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

NPN Transistor VCEO 1000V

Abstract: 1000v, NPN NTE2310 transistor VCE 1000V transistor VCEO 1000V TO218 package transistor 1000V 6A high voltage fast switching npn 4A
Contextual Info: NTE2310 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching industrial applications. Absolute Maximum Ratings:

BUV47A

Contextual Info: SavantIC Semiconductor Product Specification BUV47A Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High breakdown voltage ·Fast switching time APPLICATIONS ·Suited for 220V switchmode power supply,DC and AC motor control PINNING PIN DESCRIPTION

1000v, NPN

Abstract: dc motor control circuit 220v dc BUV47A
Contextual Info: Inchange Semiconductor Product Specification BUV47A Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High breakdown voltage ・Fast switching time APPLICATIONS ・Suited for 220V switchmode power supply,DC and AC motor control PINNING PIN

BUT76AF

Abstract: NPN Transistor VCEO 1000V transistor 1000V transistor VCE 1000V NPN 1000V transistor but76a
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT76AF DESCRIPTION •High Voltage ·High Speed Switching ·High Power Dissipation APPLICATIONS ·Designed for switching mode power supply, inverters, motor control and relay driver applications.

BUX31

Abstract: BUX31A BUX31B NPN VCEo 1000V
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUX31/A/B DESCRIPTION •High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO SUS = 400V (Min)-BUX31 = 450V (Min)-BUX31A = 450V (Min)-BUX31B ·Low Saturation Voltage

transistor VCE 1000V

Abstract: npn 1000V 15A NPN Transistor VCEO 1000V 300V transistor npn 15a
Contextual Info: NTE2333 Silicon NPN Power Transistor for Switching Power Applications Description: The NTE2333 is a silicon NPN Power Transistor in a TO220 package designed for use in 220V line– operated Switchmode Power supplies and electronic light ballasts. Features:

NPN Transistor VCEO 1000V

Abstract: transistor VCE 1000V transistor VCBO 1000V IC 100mA BUL810 Halogen lighting transformer transistor VCEO 1000V electronic transformer halogen NPN Transistor 8A 1000v, NPN 8A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUL810 DESCRIPTION •High Voltage Capability ·High Switching Speed APPLICATIONS Designed for use in lighting applications and low cost swith-mode power supplies. ·Electronic transformer for halogen lamps

BUV48

Abstract: BUV48A npn 1000V 100a
Contextual Info: \ TRAN SYS m tUCTBOIIICS BUV48, BUV48A NPN s ilic o n p o w e r t r a n s i s t o r s « w LIMITED SOT-93 PACKAGE TOP VIEW > ^ 20 1 • Rugged Triple-Diffused Planar Construction • 15 A Continuous Collector Current • 1000 Volt Blocking Capability c c

Contextual Info: INSTR b2 -COPTO} DE JfiTLlTHb 0 0 3 7 Q S 3 S TEXAS INSTR OPTO ¿2C 37053 D TIPL760, TIPL760A, TIPL761, TIPL761A N-P-N SILICON POWER TRANSISTORS 1~~ 3 2 - 1 2 REVISED OCTOBER 1984 • 8 0 W /1 0 0 W a t 2 5 ° C Case Temperature • 4 A Continuous Collector Current

NPN Transistor VCEO 1000V

Abstract: CT7053 CT70 transistor VCEO 1000V Ct705 NPN VCEo 1000V transistor 1000V 1005 NPN 1000v, NPN c0210
Contextual Info: WESTCODE SEMICONDUCTORS r - 33-/5" T T D n S S QQOaiSb T ITE D ADVANCE W ESTCODE SEMICONDUCTORS PUBLICATION CT 7053 Ib s iib I August 1005 NPN POWER TRA N SISTO R CT7BD3 notlnijs POWERSWITCH 1400 V O L T S 150 AMPHRES Past Switching Low Saturation Voltages

NPN Transistor VCEO 1000V

Abstract: transistor BUX81/9
Contextual Info: BUX81 MECHANICAL DATA Dimensions in mm inches HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR PostScript Picture C:\GRAPHICS\TO204AA EPS Applications The BUX81 is an epitaxial silicon NPN planar transistor that has high current and high power handling capability and

transistor

Contextual Info: BUX81 MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42)

BUW12A

Abstract: transistor 1000V 6A F 9016 transistor NPN Transistor VCEO 1000V
Contextual Info: BUW12A 8A Power Transistors High Voltage Switching Features: High Voltage Power Transistor is a fast switching high voltage transistor, more specially intended for operating in industrial. • Collector-Emitter Sustaining Voltage VCEO sus = 450V (Minimum) - BUW12A.

g1283

Contextual Info: "Ëâ 0037011 0 TEXAS INSTR -COPTO} 8961726 TEXAS INSTR <OPTO> _ ì 62C 37011 TIPL751, TIPL751A N-P-N SILICON POWER TRANSISTORS T T OCTOBER 1982 - REVISED OCTOBER 1984 • 120 W a t 2 5 ° C C ase Temperature • 4 A Continuous Collector Current •

2SC2123

Contextual Info: Inchange Semiconductor Product Specification 2SC2123 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Short switching times. ·High dielectric strength. APPLICATIONS ·For use in TV horizontal deflection stage PINNING see fig.2 PIN DESCRIPTION

2SC2123

Contextual Info: SavantIC Semiconductor Product Specification 2SC2123 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Short switching times. ·High dielectric strength. APPLICATIONS ·For use in TV horizontal deflection stage PINNING see fig.2 PIN DESCRIPTION

bu626a

Abstract: BU626
Contextual Info: SavantIC Semiconductor Product Specification BU626A Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Short switching times. ·High dielectric strength. APPLICATIONS ·For use in power supply units of TV receives. PINNING see fig.2 PIN DESCRIPTION

BUT76A

Abstract: BUT76
Contextual Info: SavantIC Semiconductor Product Specification BUT76 BUT76A Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage;high speed ·High power dissipation APPLICATIONS ·Switching mode power supply ·Motor control and relay driver PINNING

BUT76A

Abstract: BUT76
Contextual Info: Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUT76 BUT76A ・ DESCRIPTION ・With TO-220C package ・High voltage;high speed ・High power dissipation APPLICATIONS ・Switching mode power supply ・Motor control and relay driver

2n2222 texas instruments

Abstract: BY206 TIPL757 TIPL757A n-p-n r.f. power transistors npn 1000V 15A D037D
Contextual Info: TEX AS I NST R -COPTO} ta DE JflTblTEt. D D 3 7 D 4 4 8 9 6 1 7 2 6 TEXAS INSTR OPTO 62C 37044 D f ,7""- 3S-/S“ TIPL757, TIPL757A N-P-N SILICON POWER TRANSISTORS i electrical characteristics at 25 ° C case temperature (unless otherwise noted) - PARAM ETER

BUT76A

Abstract: BUT76
Contextual Info: Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUT76 BUT76A ・ DESCRIPTION ・With TO-220C package ・High voltage;high speed ・High power dissipation APPLICATIONS ・Switching mode power supply ・Motor control and relay driver