1000AP Search Results

tc531000p

Abstract: TC541000AP TC531000
Contextual Info: h >í i t v a r v / A i t L y v .in v ^ u i i 1000AP / AF - 12, -1 5 TC541001AP/AF -1 2 , -1 5 SILICON STACKED GATE MOS TECHNICAL DATA 131,072 W O R D x 8 BIT CMOS ONE TIM E PROGRAMMABLE READ ONLY M E M O R Y DESCRIPTION T he TC 541000A P/ AF an d T C 541001A P / A F are a 131,072 word X 8 bit one tim e program m able

dioda 1n4007

Abstract: diody i tyrystory dioda Silikon TSE6-1A3113100 schemat 1000ap dioda LED zasilacze TSE6-1A3213100 tyrystory
Contextual Info: TSE - urz¹dzenie do ³agodnego za³¹czania transformatora, jest przekaŸnikiem elektronicznym z mikroprocesorem kontroluj¹cym warunki za³¹czania transformatora. Jako klucze elektroniczne zastosowane s¹ tu tyrystory mocy. £agodny rozruch transformatora bez udarowego pr¹du rozruchowego jest osi¹gniêty dziêki krótkotrwa³emu przemagnesowaniu rdzenia

Contextual Info: CMOS DRAM KM44C1000A 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • T h e S a m s u n g K M 4 4 C 1 0 0 0 A is a high s p e e d C M O S 1 ,0 4 8 , 5 7 6 b it X 4 D y n a m ic R andom A c c e s s M e m o ry . P e rfo rm a n c e range:

Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . AND TEC I INNOVAT O L OGY SMC3K Series N HN Diodes O 19 62-2012 Diodes - TransZorb Bi-Directional TVS Surface-Mount Bi-Directional Transient Voltage Suppressors Feature High Surge Capability to 3 kW in SMC DO-214AB Package

THYRISTOR tf707 g

Contextual Info: TF707.L M ITEL Fast Switching Thyristor SEMICONDUCTOR Supersedes January 1996 version, DS4275 - 2.1 DS4275 - 2.2 KEY PARAMETERS 2500V DRM 600A T RMS 9000A TSM dV/dt 300V/(is dl/dt 500A/|is t. 100|is APPLICATIONS • High Power Inverters And Choppers.

Contextual Info: T E N TA T IV E D A T A 1,048,576 W O R D x 1 BIT D Y N A M I C R A M DE SC R IP TIO N The T C 5 1 1 0 0 0 A P L /A JL /A Z L is the new gen eration dynam ic RAM organized 1 ,0 4 8 ,5 7 6 words by 1 b it. The T C 5 1 1 0 0 0 A P L /A JL /A Z L utilizes T O SH IB A ’S CMOS Silicon gate process technology as well as

AMD AM2 pin

Abstract: M5M270100P Hitachi Scans-001
Contextual Info: - 140 — P 5 7 1 0 0 0 X ïa J a JK W æ £ it £ <°c> A -, f- > y « tt « VDD A M tu ü / m Ci max pF V O L / I VOL max (V/mA) æ € æ V O H / I VOH min (V/mA) Co max (PF) TOH max (ns) TOR max (ns) TOD max (ns) 170 170 65 50 4. 5 - 5 . 5 30/1.0 0.8

Contextual Info: SAM S UN G E L E C T R O N I C S INC b4E D • 7^4142 KM44C1000A D D 1 3 2 4 2 TÔ4 CMOS DRAM 1MX4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 0 A is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess M emory.

TCS4H

Abstract: TC531000 tc531000p TC54H1000AP/AF-85
Contextual Info: TC54H1OOOAP/AF-85, -10 TC54H1001 AP/AF-85,-10 M0S 131,072 W O R D x 8 BIT C M O S O N E T IM E P R O G R A M M A B L E READ O N LY M E M O R Y D ESCRIPTIO N The TC 54H 1000A P / A F and TC54H 1001A P / A F a re a 131,072 w o rd X 8 b it om e tim e p ro g ra m m a b le r e a d o n ly m e m o ry a n d m o ld e d in a 32 p in p la s tic p a c k a g e .

JESD 201 class 1A

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . Diodes SMC3K Series Surface-Mount Bi-Directional Transient Voltage Suppressors Feature High Surge Capability to 3 kW in SMC DO-214AB Package KEY BENEFITS • SMC DO-214AB package • High surge capability to 3 kW at 10/1000 µs

tc51000ap

Abstract: tc511000ap tc511000 1000ap
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS T C 5 1 1000ÄP/AJ/AZ-70. T C 5 11 0 0 0 A P / A J / A Z - 8 0 TC51 lOOOAP/AJ/AZ-10 DESCRIPTION T h e T C 5 1 1 0 0 0 A P / A J / A Z is t he n e w g e n e r a t i o n d y n a m i c R AM org a n i z e d 1,04 8 , 5 7 6 w o r d s b y

1000Ap

Abstract: 5m41 5m41000
Contextual Info: MITSUBISHI LSIs 1000AP, J, L-8,-10, .12 FAST PAGE MODE 1 0 4 8 5 7 6 -B IT 1 0 4 8 5 7 6 -W 0 R D BY 1-BIT DYNAMIC RAM D ESCRIPTIO N This is a fam ily o f 10 4857 6-w o rd by 1-bit dynam ic RAMs, PIN C O N F IG U R A T IO N (TOP V IE W ) fabricated w ith the high performance CMOS process, and

TD2425F

Abstract: relay d2w 12ARMS reversing ssr 1200ap MOV250 D2W203F D2W203F-11 CRYDOM D2W202F D2W202F
Contextual Info: C R Y 3D M DIN RAIL MOUNT SOLID STATE RELAYS PRODUCT SELECTION GUIDE EUROPE THE CHOICE IS YOURS This product selection guide sets out to advise the user how to achieve the best results from our SOLID STATE RELAYS when used in conjunction with our new range of

km44c1000aj

Abstract: KM44C1000A-7 KM44C1000A-10 KM44C1000AP KM44C1000A-8
Contextual Info: CMOS DRAM KM44C1000A 1M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • T h e S a m s u n g K M 4 4 C 1 0 0 0 A is a hig h s p e e d C M O S 1 ,0 4 8 , 5 7 6 b it X 4 D y n a m ic R andom A c c e s s M e m o ry . Its d e s ig n is o p tim iz e d fo r h ig h p e rfo rm a n c e a p p lic a tio n s