100-C16 400 B Search Results

4525 GE

Contextual Info: BLUE POWER DIE BXCE 33 mil x 33 mil PRODUCT DATA SHEET DS-C16 The Bridgelux family of blue power die enables high performance and cost effective solutions to serve solid state lighting market. This next generation chip technology delivers improved efficiency and

EPC60

Abstract: gps1bh FK1250H GE MCB B16 IEC 60898 category C mcb tripping curves 64c04 mcb C16 630 mcb c CURVE TRIPPING VOLTAGE 20 A FG400N
Contextual Info: GE Consumer & Industrial Power Protection New ElfaPlus Unibis Compact MCB’s Saving up to 50% space in distribution boards GE imagination at work ElfaPlus Unibis™ 2 Advantages 6 Miniature circuit breakers - Series EPC 31N 7 Miniature circuit breakers - Series EPC 451N

Contextual Info: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 MRF177M N–Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as drivers or output amplifiers in push–pull

C35 zener

Abstract: z15 Diode glass 125 c35 fet MOSFET c25 / 0
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these

Rogers RO4350B

Abstract: RO4350B ROGERS GRM155R71E103KA01 25C2625 GRM1555C1H181JZ01
Contextual Info: Document Number: MML09212H Rev. 1, 4/2013 Freescale Semiconductor Technical Data Enhancement Mode pHEMT Technology E−pHEMT MML09212HT1 Low Noise Amplifier The MML09212H is a 2−stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed

C38 diode

Abstract: Z15 marking diode z15 Diode glass C36 marking diode marking c34 c38 transistor
Contextual Info: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 MRF1570T1 MRF1570FT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules BSM300GA120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values

z15 Diode glass

Abstract: Z14 j b5c15 C2233 AN721 diode zener c29 A113 J042 AN215A AN3263
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1570N Rev. 9, 6/2008 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these

transistor c36

Abstract: J117 surface mount TRANSISTOR zener diode c25 c38 transistor c25 mosfet MOSFET c25 /c25 mosfet
Contextual Info: MOTOROLA Order this document by MRF1570T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1570T1 is designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband

Contextual Info: Digital Step Attenuator 50Ω DC-2400 MHz 31.5 dB, 0.5 dB Step, 6 Bit, Parallel Control Interface Dual Supply Voltage Product Features • Low Insertion Loss • High IP3, +52 dBm Typ • Excellent return loss, 20 dB Typ • Excellent accuracy, 0.1 dB Typ • Fast switching control frequency, 1 MHz typ.

ZX76-WP

Abstract: ZX76-31R5-PN
Contextual Info: Digital Step Attenuator 50Ω DC-2400 MHz 31.5 dB, 0.5 dB Step, 6 Bit, Parallel Control Interface Dual Supply Voltage Product Features • Low Insertion Loss • High IP3, +52 dBm Typ • Excellent return loss, 20 dB Typ • Excellent accuracy, 0.1 dB Typ • Fast switching control frequency, 1 MHz typ.

Contextual Info: Digital Step Attenuator 50Ω DC-2400 MHz 31 dB, 1 dB Step, 5 Bit, Parallel Control Interface Dual Supply Voltage Product Features • Low Insertion Loss • High IP3, +52 dBm Typ • Excellent return loss, 20 dB Typ • Excellent accuracy, 0.1 dB Typ • Fast switching control frequency, 1 MHz typ.

25 pin parallel connector

Abstract: ZX76-31R5-PN-S 31R5
Contextual Info: Digital Step Attenuator 50Ω DC-2400 MHz 31.5 dB, 0.5 dB Step, 6 Bit, Parallel Control Interface Dual Supply Voltage Product Features • Low Insertion Loss • High IP3, +52 dBm Typ • Excellent return loss, 20 dB Typ • Excellent accuracy, 0.1 dB Typ • Fast switching control frequency, 1 MHz typ.

HTSS242150

Abstract: HTSS372125 HTSS242125 Hi-Tech Fuses
Contextual Info: Trans-Guard OS Shorty Fuse C A ⁄4-20 threaded hole 1 ⁄2" deep both ends 1 Dimensional Information NOMINAL FUSE VOLTAGE RATING (KV) 8.3 17.2 15.5 23.0 38.0 CURRENT RATING (AMPS) FUSE CAT. NO. 40 HTSS232040 50 65 80 100 125 150 165 200 30 40 50 65 80

Contextual Info: Product Specification PE4304 75 Ω RF Digital Attenuator 6-bit, 31.5 dB, DC – 2.0 GHz Product Description The PE4304 is manufactured in Peregrine’s patented Ultra Thin Silicon UTSi CMOS process, offering the performance of GaAs with the economy and integration of conventional

Allen-Bradley 100-C16 10

Abstract: 140M-C2E Allen-Bradley 100-C16 10 contactor Allen-Bradley contactor 100-C30 10 140M-C2E-C25 140M-C2E-B16 Allen-Bradley 190S 100-FPT 140M-C2E-B40 140M-C-AFA11
Contextual Info: Bulletin 140M Motor Protectors 0Circuit Breaker Bulletin 140M Motor Protectors • Current Range 0.1.45 A • With 140-CMN up to 90 A • Type 2 Coordination with Bulletin 100-C Contactors • UL Listed • “Self-protected” Type E Manual Combination

200B103MW

Abstract: 100B5R6CW
Contextual Info: Freescale Semiconductor Technical Data Rev. 1, 1/2005 RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier

Contextual Info: Digital Step Attenuator 507 DC-2400 MHz 31 dB, 1 dB Step, 5 Bit, Parallel Control Interface, Single Supply Voltage Product Features • Low Insertion Loss • High IP3, +52 dBm Typ • Excellent return loss, 20 dB Typ • Excellent accuracy, 0.1 dB Typ • Single Supply Voltage: +3V

Contextual Info: Document Number: MRF1570N Rev. 10, 6/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these

AN215A

Abstract: z15 Diode glass diode marking c34 Z15 marking diode 2.4 agc 130 watts power amplifier schematic marking us capacitor pf l1 marking Z4 A113 AN1907 AN211A
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1570N Rev. 10, 6/2009 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these

Motorola 622 J112

Abstract: J-174 MRF1570FT1 C2568
Contextual Info: MOTOROLA Order this document by MRF1570T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF1570T1 MRF1570FT1 MRF1570NT1 MRF1570FNT1 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these

Contextual Info: PRODUCT SPECIFICATION PE4304 75Ω RF Digital Attenuator 6-bit, 31.5 dB, DC – 2.0 GHz Product Description Features • 75Ω impedance • Attenuation: 0.5 dB steps to 31.5 dB • Low distortion for CATV and multicarrier applications • Flexible parallel and serial

z15 Diode glass

Abstract: 107 J117 surface mount TRANSISTOR MRF1570FT1 zener diode z7 b2 C35 zener
Contextual Info: MOTOROLA Order this document by MRF1570T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these

PE4304

Abstract: PE4304-EK EK QFN
Contextual Info: PRODUCT SPECIFICATION PE4304 75Ω RF Digital Attenuator 6-bit, 31.5 dB, DC – 2.0 GHz Product Description Features • 75Ω impedance • Attenuation: 0.5 dB steps to 31.5 dB • Low distortion for CATV and multicarrier applications • Flexible parallel and serial