100 CJB Search Results

Contextual Info: MOTOROLA Order this document by BUH100/D SEMICONDUCTOR TECHNICAL DATA BUH 100 D esigner’s Data Sheet POWER TRANSISTOR 10 AMPERES 700 VOLTS 100 WATTS SWITCHMODE NPN Silicon Planar Power Transistor The BUH100 has an application specific s ta te -o f-a rt die designed for use in

Contextual Info: SHEET 1 OF 1 2.54 `.05 [.100 `.002 in] TYP. 2.54 `.05 [.100 `.002 in] TYP. n1.22 X2 [.048 in] PCB PIN 1 3 12.40 [.488 in] 320 CAP WHT (B040001) n1.00 (X2) [.039 in] ALIGNMENT PIN RECOMMENDED P.C.B. LAYOUT 2.50 [.098 in] 1.25 [.049 in] 1 3 ISOMETRIC 7.40

2N3501 MOTOROLA

Abstract: 2N3498 MOTOROLA 2N3498 2N3499 2n3500 2N3501
Contextual Info: MOTOROLA SC X S T R S /R 12E F I b3fcj7254 0 0 f l t 3 3 t 2N3498 thru 2N3501 MAXIMUM RATINGS Symbol Rating 2N3498 2N3499 2N3500 2N3501 Unît Collector-Emitter Voltage VCEO 100 150 Vdc Collector-Base Voltage VCBO 100 150 Vdc Emitter-Base Voltage vebo 300 mAdc

B20B

Contextual Info: 100 - 300 MHz Standard Hybrid Amplifier . Parameters 100-300 MHz bandwidth II Q r q b c D f l 'O j O Specification limit Temperature +25 Frequency range dB +0.7/- l.l dB M ax Gain flatness 1.0 1.0 dB M ax p-p Reverse isolation 36 36 dB Min 1.5:1 1.5:1 Max

Contextual Info: SHEET 1 OF 1 5.08 [.200 in] 2.54 [.100 in] n1.09 [.043 in] P.C. MOUNTING SWITCH FUNCTION POS. 1 POS. 2 E-LOGO ON OPPOSITE SIDE n2.54 ISOMETRIC 5.08 [.200 in] [.100 in] .61 [.024 in] ON ON 2-1 2-3 n6.10 [.240 in] (ON)=MOMENTARY 2 1 8.13 [.320 in] 3.20 [.126 in]

2N3728

Contextual Info: na. TELEPHONE: 379 212 227-0008 FAX; (973) 378-0980 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.3A 2N3728 NPN HIGH PERFORMANCE DIFFERENTIAL AMPLIFIERS llfU . . . 0.0-1.0 PROM 100 MA to 1.0 mA 9 20'C, 0.8-1.0 FROM 100 jjA to 1.0 mA, -65* C to +125°C = • • • 3-° mV (MAX >

2N3501 MOTOROLA

Abstract: N3499 2n3501
Contextual Info: 2N3499 thru 2N3501* M AXIMUM RATINGS 2N3499 2N3500 2N3501 U n it Symbol C o lle ctor-E m itter Voltage v CEO 100 150 Vdc Collector-Base Voltage VCBO 100 Em itter-Base Voltage v EBO Rating 150 Vdc 6.0 Vdc C o lle ctor C urrent — C ontinuous <C Total Device D issipation a, T ^ = 25aC

Contextual Info: SHEET 1 OF 1 2.54 [.100 in] 8.13 [.320 in] n1.09 5.08 [.200 in] [.043 in] P.C. MOUNTING n6.00 [.236 in] 4.39 [.173 in] FLAT SWITCH FUNCTION POS. 1 POS. 2 POS. 3 ISOMETRIC ON NONE ON 2-3 OPEN 2-1 POS. 1 POS. 3 n[.100 in] 5.59 [.220 in] 10-48 UNS-2A THREADS

ztx327

Abstract: BF197P FERRANTI ELECTRONICS H9 sot 23 BSS63 BSS64 FMMT918 FMMTA12 FMMTA13 FMMTA14
Contextual Info: SOT-23 TRANSISTORS D A R L IN G T O N -N P N R A T IN G S A N D C H A R A C T E R IS T IC S at 25°C ambient temperature. Type hFE at Iq /V ce mA/Volts t Ic b o nA V cb V olts ic mA P to t * mW min 30 300 300 10K 10/5 100 30 30 300 300 5K 10/5 100 30 20 300

ballast electronic hps

Abstract: TRANSISTOR TC 100 mje1800b 740 data sheat AMD 754 hps electronic ballast jf18008 221A-06 AN1040 MJE18006
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE18006* M JF18006* Designer’s Data Sheet SWITCHMODE™ ‘ Motorola Preferred Dtvlct NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTS

21140-AF

Abstract: 10BASE2 10BASE5 21140af TTL catalog digital 21140af protocol contact id sia 21143-TA
Contextual Info: General Description 1 DIGITAL Semiconductor 21143 Overview The DIGITAL Semiconductor 21143 PCI/CardBus 10/100-Mb/s Ethernet LAN Controller 21143 supports the peripheral component interconnect (PCI) bus or CardBus. It provides a direct interface connection to the PCI bus and adapts easily

lt 302d

Abstract: voltage follower lm 741 AM102
Contextual Info: Am102/202/302 Voltage Follower Distinctive Characteristics • The Am102/202/302 are functionally, electrically, and pin-for-pin equivalent to the National LM102/ 202/302 • Supp ly voltage range: ±5.0V to ±18V • 100% reliability assurance testing in compliance with

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor BCW72LT1 NPN Silicon MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter- Base Voltage Symbol Value Unit VCEO 45 Vdc v CBO 50 Vdc Ve b o 5.0 Vdc 'c 100 mAdc Collector Current — Continuous

2N2223

Abstract: 2N2060 2n2223 transistor 2N2223A 2N2480
Contextual Info: MOTOROLA SC -CXSTRS/R 6367254 ~TL> F> MOTOROLA SC XSTRS/R 96D F Collector-Emitter Voltage 2N2060 Symbol 2N2223.A VCEO 60 Collector-Emitter Voltage VCER 80 Collector-Base Voltage VCBO 100 Emitter-Base Voltage VEBO 7.0 Collector Current — Continuous PD Total Device Dissipation

mps3904

Abstract: MPS3903 MPS3904 transistor To92 transistor
Contextual Info: MOTOROLA SC 1EE D XSTRS/R F I ti3ti7aSM Symbol Rating Unit Value VCEO - 40 Vdc Collector-Base Voltage VcBO 60 ' Vdc Emitter-Base Voltage Vebo 6.0 Vdc Collector Current — Continuous ic 100 mAdc Total Device Dissipation @ T a = 25°C Derate above 25°C Pd

Contextual Info: MOT ORCLA SC XSTRS/R F 1EE D | b3b72S4 DGflb2E7 3 | MAXIMUM RATINGS Sym bol Value Collector-Emitter Voltage VCEO 60 Vdc Collector-Emitter Voltage {Rgg = 10 Ohms VCER 80 Vdc Collector-Base Voltage VCBO 100 Vdc Emitter-Base Voltage V EBO 7,0 Vdc Collector Current — Continuous

Contextual Info: SHEET OF L.E.D INFD.I YEL. SYMBOL PARAM ETERS PDWER DISSIPATION A VE FORWARD CURRENT REVERSE VOLTAGE FORWARD VOLTAGE PEAK EMISSION WAVELENGTH REVERSE CURRENT LUMINOUS INTENSITY @ 20mA Pd If V r Fv Xd MAX. TYP. UNITS 100 30 5 E.5 mW nA V V nm A - - 1.8 660

2N6781

Contextual Info: POWER MOSFET TRANSISTORS JTX JTXV¡"I 100 Volt, 0.6 Ohm N-Channel FEATURES DESCRIPTION • • • • • The U nitrode power M O SFET design u tilizes the m ost advanced technology available. This efficien t design achieves a very low RDSIOn>and a high transconductance.

100 6n tantalum

Abstract: vishay cwr11
Contextual Info: capacitors Solid Tantalum Chip Capacitor, Military, Surface-Mount features • Broad capacitance range: 0.10 µF to 100 µF • Broad voltage range: 4 WVDC to 50 WVDC • Military established reliability; Weibull failure rates B, C, and D • Molded case available in four military case codes: A, B, C, D

vogt V5

Abstract: vogt s2 vogt v6 vogt s1 thomson gup siemens toroidal core 58930 9l reset L4964 regulator circuit diagram vogt inductor
Contextual Info: L4964 HIGH CURRENT SWITCHING REGULATOR • 4 A OUTPUT CURRENT - 5.1 V TO 28 V OUTPUT VOLTAGE RANGE ■ 0 TO 100 % DUTY CYCLE RANGE ■ PRECISE ± 3 % ON-CHIP REFERENCE ■ SWITCHING FREQUENCY UP TO 120 KHz ■ VERY HIGH EFFICIENCY (UP TO 90 %) ■ VERY FEW EXTERNAL COMPONENTS

a dbm hmf no

Contextual Info: HARRIS Mül SEMICONDUCTOR r r HARRIS 4hE D 1 • HMS H3DSEbT D 0 0 01 7 3 HMF-12000 -100 -200 Power Optimized GaAs FET 2-16 GHz PRODUCT DATA Features • +27.5 dBm Output Power -200) with 7.5 dB Associated Gain at 8 GHz Large Cross Section Ti/Pt/Au Gates

bip 373

Contextual Info: MOTOROLA Order this document by BUH100/D SEMICONDUCTOR TECHNICAL DATA BUH100 Designer’s Data Sheet POWER TRANSISTOR 10 AMPERES 700 VOLTS 100 WATTS SWITCHMODE NPN Silicon Planar Pow er TVansistor T h e B U H 10 0 has an application specific s ta te -o f-a rt die designed for use in

BC171A

Abstract: BC172C BC174A,B BC174A BC171B BC172A BC171A,B bc172a.b BC546
Contextual Info: MOT OROL A SC 12E D I t3b?ES4 QQÖSÖST 4 | XSTR S/ R F Sym bol BC 174A,B BC 171A,B BC 172A,B Unit Collector-Emitter Voltage VCEO 65 45 25 Vdc Collector-Base Voltage VCBO 80 50 30 Emitter-Base Voltage Veb o 6.0 Vdc Collector Current — Continuous >C 100 mAdc

MMBT3906 spice

Abstract: 2N3906 2N3906 die 728p 200H MMBT3906 MMPQ3906 PZT3906 LS141
Contextual Info: 2N3906 / MMBT3906 / PZT3906 FAIRCHILD S E M IC O N D U C T O R tm 2N3906 C MMBT3906 •# TO-92 BÎ SOT-23 B Mark: 2A PZT3906 SOT-223 PNP General Purpose Amplifier This device is designed for general purpose am plifier and switching applications at collector currents of 10 nA to 100 mA. Sourced