100 6N Search Results

LCN1206T-10N

Abstract: smd color coding
Contextual Info: SMD Wire Wound Ceramic Chip Inductors – LCN1206 Series Electrical Characteristics LCN1206T-3N3…-S LCN1206T-6N8…-S 3.3 6.8 Test Frequency MHz 100 100 LCN1206T-10N…-S 10 100 10 / 5 / 2 40 LCN1206T-12N…-S 12 100 10 / 5 / 2 40 Part Number Inductance (nH)

CG0603MLC-12LETR-ND

Abstract: MF-PSMF110X-2 CG0402MLC-12LGTR-ND CMF-RL55A-0-ND MF-USMF020 dkrn MF-SMDF050-2 MF-MSMF200-2 MF-USMF010-2CT-ND
Contextual Info: Resettable Overcurrent Protectors Cont. Max. Rated Current Volt. I Max. @ 23°C (Amps) Fig. (V) (Amps) Hold Trip 9B 9C 9D 6.0 16.0 6.0 6.0 8.0 6.0 16.0 60 15 30 30 30 6 13.2 6 6 6 100 100 100 100 100 100 100 10 40 10 10 10 40 40 40 40 40 1.10 1.10 1.25 1.50

Contextual Info: *57 SGS-THOMSON TYPE S TD 6N 10L STD6N10L m N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR V dss R DS on Id 100 V < 0 .4 5 Ü 6 A • • . . ■ . . ■ TYPICAL RDS(on) = 0.4 Cl AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

Contextual Info: *57 SGS-THOMSON STD6N10 m N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR T YPE STD 6N 10 V dss R D S o n Id 100 V < 0 .4 5 Ü 6 A . • . . • . . ■ TYPICAL R Ds(on) = 0.35 Cl AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

TIC 136 Transistor

Contextual Info: STU6NA100 N - CHANNEL 1000V - 1 .45ß - 6A - Max220 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V dss S T U 6N A 100 1000 V R dS oii Id a 6 A < 1 .7 . TYPICAL RDs(on) = 1.45 £2 . ± 30V GATE TO SOURCE VOLTAGE RANTING . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C

Contextual Info: * SY10/100/101480-6 SY10/100/101480-8 SY10/100/101480-10 16K x 1 ECL RAM SYNERGY SEMICONDUCTOR DESCRIPTION FEATURES The Synergy SY10/100/101480 are 16384-bit Random Access Memories RAMs , designed with advanced Emitter Coupled Logic (ECL) circuitry. The devices are organized

M0C3011

Abstract: ists824 ISTS80 H1101 H11L1 H21A1 ISTS2001 ICPL2502 ICPL3700 h21A1 sensor
Contextual Info: ISOCOfl COMPONENTS LTD 45E ]> • HfiflbSlO □□0023*1 fi « I S O -f-4 -73 o Ui o o < £ Characteristics CD TRANSISTO R FAM ILY •r Ip= 20mA V„=2V lj.= 1mA Max (V Max (pA) Min (VI MinlVl Max (nAI Max (VI 1.7 1.7 1.7 100 100 100 30 30 30 5 5 5 100 100

SG12864I

Abstract: Digilent ic22 connector mr-100 MR100
Contextual Info: SG 12864I 1 USS unnaua HND UCCSU0 I n t e r f a c e C o n n e c to r R1 -JVW\r100 _ENH _UCC3U3 U0 R2 -JWV\r 100 R3 R/U n/T 18 -vwv- /RFT 17 100 R4 -JVW\r 100 R5 nRfl DR1 DR7 nR3 DR4 HRS DR6 DR 7 HS1 ns? R6 I— VWV 100 16 15 14 13 vwv- 12 100 R7 -vwv- R8 100

Contextual Info: Feed-through terminals SAK 4 SAK 6 N SAK 10 a r i # LR u DNV 6.5 x 40 x 51.5 IEC 60 947-7-1 800 32 4 8 3 Type SAK 4 SAK 4 SAK 4 SAK 4 SAK 4 SAK 4 Part No. 0128320000 0128370000 0128330000 01283600001 2) 01283800001)2) 01050600001)2) Qty. 100 100 100 100 100

6NF10

Abstract: D6NF10 st mosfet D6NF d6nf1 JESD97 STD6NF10 STD6NF10T4 STU6NF10 240A1
Contextual Info: STD6NF10 STU6NF10 N-channel 100 V, 0.22 Ω, 6 A, DPAK, IPAK low gate charge STripFET Power MOSFET Features Type VDSS RDS on max ID STD6NF10 100 V < 0.250 Ω 6A STU6NF10 100 V < 0.250 Ω 6A • Exceptional dv/dt capability ■ 100% avalanche tested 3

Contextual Info: SfUPEC 52E » • 34032^7 ÜGQ042b T7F 7- Typenreihe/Type range Z 5 - & 100 * 200 300 400 500 600 700 800* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum permissible values V 100.800 V 100.800 V drm V rrm 16 7 10 120 100

Contextual Info: RodlalUadedCapadtor^^^^^^^ Film/Foil Polycarbonate Dielectric •KC Preformed Cose with Epoxy Endflll Insulation Resistance <100 VDC Rated Voltage 500,000 MegOhms minimum 50 VDC Test Voltage >100 VDC 500,000 100 VDC Measured after 1 minute of electrification.

Contextual Info: Radial leaded Capacitors Film/Foll Polycarbonate Dielectric - KC Preformed Casa with Epoxy Endflll Insulation Resistance <100 VDC >100 VDC Rated Voltage 500,000 500,000 MegOhms minimum 50 VDC 100 VDC Test Voltage Measured after 1 minute of electrification.

Contextual Info: Radial Leaded Capacitors_ M etalliied Polycarbonate Dielectric • MKC Preformed Casa with Epoxy Endflll_ Rated Voltage Insulation Resistance < 100 VDC 3750 50 VDC MegOhms minimum Test Voltage >100 VDC 3750 100 VDC Measured after 1 minute of electrification.

Contextual Info: * SY10/100/101480-6 SY10/100/101480-8 SY10/100/101480-10 16K x 1 EC L RAM SYNERGY S E M IC O N D U C TO R DESCRIPTION FEATURES • Address access time, tAA: 6/8/10ns max. ■ Chip select access time, tAC: The Synergy SY10/100/101480 are 16384-bit Random Access Memories RAMs , designed with advanced Emitter

Contextual Info: Radial leaded Capacitors Metaliizw^o|yesteHMe^ Preformed Casa with Epaxy Endffll Insulation Resistance <100 VDC Rated Voltage > 100 VDC > 3,000 >1,250 MegOhms x MicroFarads Need Not Exceed MegOhms Test Voltage 10,000 100 VDC 3,750 50 VDC Measured after 1 minute of electrification.

Contextual Info: Radial Leaded Capacitors Fiim/Foil Polypropylene Dielectric • KP Preformed Case with Epoxy Endfill Rated Voltage MegOhms Test Voltage Insulation Resistance <100 VDC >500,000 50 VDC >100 VDC >500,000 100 VDC Measured after 1 minute of electrification. Pulse Rise Time dv/dt

Contextual Info: SERIES 1817 Radial leaded Capacitors MetailjxedPolyestw Preformed Case with Epoxy Endflll Rated Voltage Insulation Resistance <100 VDC 2:100 VDC 2:1,250 3,750 50 VDC 21,250 3,750 100 VDC MegOhms x MicroFarads Need Not Exceed MegOhms Test Voltage Measured after 1 minute of electrification.

Contextual Info: EUPEC T 13 F S2E » • 34032T7 0QGG434 S3b «UPEC 7- Z 5 - & Typenreihe/Type range 100* 200 300 400 500 600 700 800* Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Vdrm Vrrm Maximum permissible values V 100.800 100.800 V 30 13

IR P 648 H 8 PIN IC

Abstract: SFH6741
Contextual Info: 6N137/ SFH6741 / 42 / 50 / 51 / 52 Vishay Semiconductors High Speed Optocoupler, 10 Mbd Features • Choice of CMR performance of 10 kV/µs, 5 kV/µs, and 100 V/µs • High speed: 10 Mbd typical • + 5 V CMOS compatibility • Guaranteed AC and DC performance over temperature: - 40 to + 100 °C Temp. Range

Contextual Info: ¿57 STH6N100 STH6N100FI SGS-THOMSON ¡mera « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V S TH 6N 100 S TH 6N 100FI dss 1000 V 1000 V R DS on Id <20 <20 6 A 3 .7 A . TYPICAL RDs(on) = 1.75 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED

SFH6741

Abstract: 17610 6N137 IEC60068-2-42 IEC60068-2-43 SFH6745T SFH6746T SFH6747T SFH6755T SFH6756T
Contextual Info: 6N137/ SFH6741 / 42 / 50 / 51 / 52 Vishay Semiconductors High Speed Optocoupler, 10 Mbd Features • Choice of CMR performance of 10 kV/µs, 5 kV/µs, and 100 V/µs • High speed: 10 Mbd typical • + 5 V CMOS compatibility • Guaranteed AC and DC performance over temperature: - 40 to + 100 °C Temp. Range

SFH6741

Contextual Info: 6N137/ SFH6741 / 42 / 50 / 51 / 52 Vishay Semiconductors High Speed Optocoupler, 10 Mbd Features • Choice of CMR performance of 10 kV/µs, 5 kV/µs, and 100 V/µs • High speed: 10 Mbd typical • + 5 V CMOS compatibility • Guaranteed AC and DC performance over temperature: - 40 to + 100 °C Temp. Range

0PA124

Abstract: LT92 hamamatsu S1336
Contextual Info: L i n C A R _ TECHNOLOGY u m Low Noise, Precision, JFET In p u t O p A m p F€flTUR€S DCSCRIPTIOn • 100% Tested Low Voltage Noise: 6nV/VHz Max ■ A Grade 100% Temperature Tested ■ Voltage Gain: 1.2 Million Min ■ Offset Voltage Over Temp: 800|iV Max