10 35L CD Search Results
10 35L CD Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: be M' ì fl HS Q02H3b7 fifiS MITSUBISHI LSIs IMITI M5M5278P,J-20,-25,-35,-25L,-35L M5M5278FP-25,-35,-25L,-35L 262144-BIT 32768-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5278 is a family of 32768-word by 8-bit static PIN CONFIGURATION (TOP VIEW) RAMs, fabricated with the high-performance CMOS silicon‘ A 9 -[T |
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Q02H3b7 M5M5278P M5M5278FP-25 262144-BIT 32768-WORD M5M5278 5278P FP-25 | |
Contextual Info: blE D • b24'iflE5 DDl fl bDS ■ M IT 1 MITSUBISHI LSIs M5M5278P, J-20,-25,-35,-25L,-35L M5M5278FP-25,-35,-25L,-35L 262144-BIT 32768-WORD BY 8-BIT CMOS STATIC RAM M ITSUBISHI (MEMORY/ASIC) DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M 5M 5 2 7 8 is a fam ily o f 32768-w ord by 8-bit static |
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M5M5278P, M5M5278FP-25 262144-BIT 32768-WORD 32768-w 5278P M5M5278P 28pin | |
Contextual Info: MITSUBISHI LS Is M5M51001P,J-25, -35,-45, -25L,-35L,-45L 1048576-BIT 1048576-WQRD BY 1-BIT CMOS STATIC RAM DESCRIPTION The M5M51001 is a family of 1048576-word by 1-bit static RAMs, fabricated with the high-performance CMOS silicon- PIN CONFIGURATION (TOP VIEW) |
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M5M51001P 1048576-BIT 1048576-WQRD M5M51001 1048576-word 400mW | |
L20XContextual Info: 24-Pin XOR AmPAL20XRP10 Fam ily 24-Pin IMOX Programmable Array Logic PAL Elements Distinctive Characteristics • AND-OR-XOR logic structure • AMD's superior IMOX technology - Guarantees tpo = 20 ns max • Individually programmable output polarity on each out |
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24-Pin AmPAL20XRP10 WF002571 IC000720 L20X | |
Contextual Info: 24-Pin XOR Am PAL20XRP10 Fam ily 24-P in IMOX Program m able Array Logic PAL Elem ents Distinctive Characteristics • • • • • AND-OR-XOR logic structure AMD’s superior IMOX technology - Guarantees tpp = 20 ns max Individually programmable output polarity on each out |
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24-Pin PAL20XRP10 WF002571 1C000720 AmPAL20XRP10 | |
Contextual Info: ADV MI CRO PLA/PLE/ARRAYS Tb 0^ 732^ 0HS7S5b , T-46- 13- 47' 24-P in XO R A m P A L 20X R P 10 F a m ily 24-Pin IMOX Programmable Array Logic PAL Elements D istinctive Characteristies • • • • • Post Programming Functional Yield (PPFY) of 99.9% |
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24-Pin PAL20XRP10 | |
AS8S512K32Contextual Info: SRAM AS8S512K32 & AS8S512K32A 512K x 32 SRAM OPTIONS SRAM MEMORY ARRAY Operating Temp. Ranges Full Military -55oC to +125oC Military (-55oC to +125oC) Industrial (-40oC to +85oC) Markings Q & 883 XT IT Timing 12ns 15ns 17ns 20ns Timing 25ns 35ns 45ns 55ns |
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AS8S512K32 AS8S512K32A -55oC 125oC) -40oC MIL-STD-883 512Kx32 AS8S512K32 | |
c 50275Contextual Info: AMD 24-Pin XOR PAL* Family 24-Pin IMOX Programmable Array Logic PAL Elements PRELIMINARY AMD DISTINCTIVE CHARACTERISTICS • • • Post Programming Functional Yield (PPFY) of 99.9% PRELOAD feature permits full logical verification Reliability assured through more than 70 billion fuse |
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24-Pin 24-Pin AmPAL20XRP6 AmPAL20XRP8 AmPAL20XRP10 24-Pln c 50275 | |
CD010250Contextual Info: 24-P in XO R A m P A L20X R P 10 F am ily 24-Pin IMOX Programmable Array Logic PAL Elements D istin ctive C h aracteristics • • • • • • • • AND-OR-XOR logic structure AM D 's superior IMOX technology - Guarantees tp o = 20 ns max Individually program m able output polarity on each out |
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24-Pin AmPAL20XRP10 ic000801 CD010250 | |
10 35L CAP
Abstract: A7837 10-536197-DS
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S08-240 D38999/24FD35BN D38999/24FD35BA D38999/24FD35BB D38999/24FD35BC D38999/24FD35BD D38999/24FD35BE 133HS E06-Z 66S9S-01 10 35L CAP A7837 10-536197-DS | |
22 35L CAPacitorContextual Info: L O S Aluminum Electrolytic Capacitors For Audio • SILM IC S E R IE S • Elna’s newly developed low distortion material constructed with silk fiber is used for the internal separator. It produces superior result in sound quality for audio applications. |
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250V5600pF 4700p 32TlD0b 22 35L CAPacitor | |
D-P5DW
Abstract: 10 35L W1 double acting cylinder 10 35L CAP CDQ2B63 D-J79W ya10 THREAD ROD 11-CQ2 CQ2B16-PS
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73C/A80C D-A7H/A80H D-A79W D-F7/J79 D-J79C D-F7W/J79W D-F79F, 20Data D-P5DW 10 35L W1 double acting cylinder 10 35L CAP CDQ2B63 D-J79W ya10 THREAD ROD 11-CQ2 CQ2B16-PS | |
35l sensor
Abstract: double acting cylinder CDQ2B32-20D CDQ2B12-10D CDQ2B20-20D CDQ2B20-10D CDQ2B12-5D DF79 d-f79 CDQ2B32-10D
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ST-1KL3B
Abstract: 1KL3b 3rt1036-1a ST-1CL5 ST-1KL3A t34l KL SN 102 PT-101 PT-10 PT-12
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TPT-303 PT-91 PT-92 PT-93 PT-94 I3-44 PT-95 PT481QI PT-96 PT-97 ST-1KL3B 1KL3b 3rt1036-1a ST-1CL5 ST-1KL3A t34l KL SN 102 PT-101 PT-10 PT-12 | |
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C3033
Abstract: C3044
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GMA2885C GMA2985C GMA2485C C2885C C2985C C2485C GMA2685C GMX2X85C GMA2685C STZ62B C3033 C3044 | |
10 35L CAPacitorContextual Info: MIC8030/8031 High-Voltage Display Driver General Description Features The MIC8030/MIC8031 is a CMOS high voltage liquid crystal display driver. Up to 38 segments can be driven from four CMOS level inputs CLOCK, DATA IN, LOAD and CHIP SELECT . The MIC8031 is rated at 100V and the MIC8030 is |
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MIC8030/8031 MIC8030/MIC8031 MIC8031 MIC8030 10 35L CAPacitor | |
8011 displayContextual Info: HOLT« HI-8010 Series INTEGRATED CIRCUITS CMOS HIGH VOLTAGE DISPLAY DRIVER GENERAL DESCRIPTION The HI-8010 high voltage display driver is con structed of MOS P Channel and N Channel enhancement mode devices in a single monolithic structure. It is designed to drive high voltage liquid |
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HI-8010 8011 display | |
double acting cylinder
Abstract: 35l sensor CDQ2B63 d-a73 magnetic switch IM02D da73 D-A73
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NG42Contextual Info: 5 18120 J/TM 12 SONY CXK B 65,536-word x 18-bit High-Speed Bi-CMOS Static RAM Description C XK5B18120J/TM are high speed 1Mbit Bi-CMOS sta tic RAMs orga nize d as 6 5 ,5 3 6 -w o rd s-b y-1 8 -b its. Operating on a single 3.3V supply these asynchronous ICs are suitable for use in high speed and low power |
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536-word 18-bit XK5B18120J/TM 1116mW CXK5B18120J 400mil, 44-pin CXK5B18120TM NG42 | |
M5235L
Abstract: 2SA696
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5235L M5235L M5235L 2SA696 | |
Contextual Info: Philips Semiconductors Preliminary specification 16-bit O-type registered transceiver 3-State 74ALVCH16543 FEATURES DESCRIPTION • Complies with JEDEC standard no. 8-1 A. The 74ALVCH16543 is a dual octal registered transceiver. Each section contains two sets of D-type latches for temporary storage of |
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16-bit 74ALVCH16543 74ALVCH16245 74ALVCH16373 74ALVCH16543 | |
IN2804Contextual Info: HYM539400 M-Series •HYUNDAI 4M X 39-bit CMOS DRAM MODULE DESCRIPTION The HYM539400 is a 4M x 39-bit Fast page mode CMOS DRAM module consisting of ten HY5116400 in 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0. 22,1/ F decoupling capacitor is mounted for each DRAM. |
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HYM539400 39-bit HY5116400 HYM539400MG/ 1CE10-10-MAY94 DQD3S35 IN2804 | |
Contextual Info: E2B0014-27-Y2 O K I Semiconductor This version: Nov. 1997 Previous version: Mar. 1996 MSM9004-01/02 1/3,1/4 DUTY LCD DRIVER WITH 4-DOT COMMON DRIVER AND 49-DOT SEGMENT DRIVER GENERAL DESCRIPTION TheMSM 9004-01 /02 is an LCD driver for dynamic display with a 1 /3 or 1 /4duty select function. |
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E2B0014-27-Y2 MSM9004-01/02 49-DOT Opera64-P-1414-0 80-BK | |
rockwell 10937
Abstract: 16 segment display pin configuration 2f 1001 oki 38 PIN vacuum fluorescent display alphanumeric display 16 pin MSC1937 MARK AD9 AD10 AD11 MSC1937-01
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E2C0026-27-Y3 MSC1937-01 14/16-Segment 16-Digit MSC1937-01 rockwell 10937 16 segment display pin configuration 2f 1001 oki 38 PIN vacuum fluorescent display alphanumeric display 16 pin MSC1937 MARK AD9 AD10 AD11 |