T35L Search Results

T35L6432B

Abstract: T35L6432B-10Q T35L6432B-12T
Contextual Info: tm TE CH T35L6432B SYNCHRONOUS BURST SRAM 64K x 32 SRAM Flow-Through Burst Mode FEATURES • Fast Access times: 9 / 10 / 11 / 12 ns • Single 3.3V +0.3V/-0.165V power supply • Common data inputs and data outputs • Individual BYTE WRITE ENABLE and GLOBAL WRITE control

0C340

Abstract: 0L3492N-3 0CM243
Contextual Info: PRODUCT LINE QLD2203 -[ b OLD221Q PRODUCT UNE PHOTOSENSORS Silicon Planer Photodiodes | 0D44L Silicon NPN Epitaxial Planer Phototransistors T34 T35L T36 T55L Digital Output Photodetectors 0IP101 PRODUCT LINE PHOTOCOUPLERS j Photocouplers -[ 0C340 QC360 0C701

Contextual Info: TE CH T35L6432A SYNCHRONOUS BURST SRAM 64K x 32 SRAM FEATURES PIN ASSIGNMENT Top View Package 100-pin QFP 100-pin TQFP MARKING -4.5 -5 -6 -7 -8 Q T Part Number Examples PART NO. Pkg. BURST SEQUENCE T35L6432A-5Q Q Interleaved (MODE=NC or VCC) T35L6432A-5T T

Contextual Info: tm TE CH Preliminary T35L6432D SYNCHRONOUS BURST SRAM 64K x 32 SRAM Flow-Through Burst Mode FEATURES • Fast Access times: 9 / 10 / 11 / 12 ns • Single 3.3V +0.3V/-0.165V power supply • Common data inputs and data outputs • Individual BYTE WRITE ENABLE and

Contextual Info: £ 21*002 ^ - 27-32 OK I electronic components T35L Silicon Planar Phototransistor GENERAL DESCRIPTION The planar structure of the T35L silicon phototransistor provides a high degree of sensitivity. High reliability is ensured by a hermetically sealed TO-18 package.

Contextual Info: tm TE CH Preliminary T35L3232B SYNCHRONOUS BURST SRAM 32K x 32 SRAM FEATURES GENERAL DESCRIPTION ¡E FT pin for user configurable pipeline or flow-through operation. ¡E Fast Access times: - Pipeline – 3.8 / 4 / 4.5 ns - Flow-through – 9 / 10 / 11ns ¡ESingle 3.3V +0.3V/-0.165V power supply

T35L6432B

Contextual Info: tm TE CH Preliminary T35L6432B SYNCHRONOUS BURST SRAM 64K x 32 SRAM Pipeline and Flow-Through Burst Mode T35L6432B-4T FEATURES ¡E FT pin for user configurable pipeline or flowthrough operation. ¡E Fast Access times: - Pipeline – 3.8 / 4 / 4.5 / 5 ns - Flow-through – 9 / 10 / 11 / 12 ns

Contextual Info: OKI T35L electronic components Silicon Planar Phototransistor GENERAL DESCRIPTION The planar structure of the OKI T35L silicon phototransistor provides a high degree of sensitivity. High reliability is ensured by a hermetically sealed TO-18 package. FEATURES

memory depth expansion

Abstract: T35L6464A 64KX64
Contextual Info: tm TE CH T35L6464A SYNCHRONOUS BURST SRAM 64K x 64 SRAM FEATURES PIN ASSIGNMENT Top View OPTIONS CE BW8 BW7 BW6 BW5 OE CLK BWE GW BW4 BW3 VSS VCC BW2 BW1 ADSC ADSP ADV VSSQ CE2 CE3 CE2 VSS VCC 102 2 3 4 5 101 100 99 98 6 7 8 9 97 96 95 94 10 11 12 13 93

Contextual Info: O K I electronic components T35L_ Silicon NPN Epitaxial Planar Phototransistor_ GENERAL DESCRIPTION The planar structure of the OKI T35L silicon phototransistor makes it a highly sensitive photodetector. High reliability is ensured by a hermetically sealed T O -18 package.

photo transistor

Abstract: PHOTO SENSORS T35L
Contextual Info: O K I electronic components T35L_ Silicon Planar Phototransistor GENERAL DESCRIPTION The planar structure of the OKI T35L silicon phototransistor provides a high degree of sensitivity. H igh reliability is ensured by a hermetically sealed TO-18 package.

marking LTES

Abstract: T35L6464A 64KX64 marking a11
Contextual Info: tm TE CH T35L6464A SYNCHRONOUS BURST SRAM 64K x 64 SRAM 3.3V SUPPLY, FULLY REGISTERED AND OUTPUTS, BURST COUNTER • Fast Access times: 5, 6, 7, and 8ns • Fast clock speed: 100, 83, 66, and 50 MHz • Provide high performance 3-1-1-1 access rate • Fast OE access times: 5 and 6ns

T35L6432A

Contextual Info: TE CH T35L6432A SYNCHRONOUS BURST SRAM 64K x 32 SRAM FEATURES PIN ASSIGNMENT Top View Package 100-pin QFP 100-pin TQFP MARKING -4.5 -5 -6 -7 -8 Q T Part Number Examples PART NO. Pkg. BURST SEQUENCE T35L6432A-5Q Q Interleaved (MODE=NC or VCC) T35L6432A-5T T

T35L3232B-4T

Abstract: T35L3232B "32K x 32" SRAM
Contextual Info: tm TE CH Preliminary T35L3232B SYNCHRONOUS BURST SRAM 32K x 32 SRAM FEATURES GENERAL DESCRIPTION ¡E FT pin for user configurable pipeline or flow-through operation. ¡E Fast Access times: - Pipeline – 3.8 / 4 / 4.5 ns - Flow-through – 9 / 10 / 11ns ¡ESingle 3.3V +0.3V/-0.165V power supply

Contextual Info: 20 15100-101 0 3 / 6 ±0.05PLATED THRU HOLE N 1 0 0 5 7 DRILL 0 0 5 8 PAD) — ROW AG & EG RECOMMENDED FOR ALL APPLICATIONS. THESE ROWS SHOULD BE CONNECTED TO GROUND. H—RHI - i —12.101 ROW AG + - - |0.00| ROW A ~ pL35l ROW B -f I / r - 1— ♦

SMD MARKING CODE A00b

Abstract: mil-std-1750a MARKING CODE A00B MIL-PRF-38510 as3 SMD Transistor MIL-STD-1750 ttl nim marking a00b SMD A009 pir chip
Contextual Info: Standard Products UT1750AR RadHard RISC Microprocessor Data Sheet May 2003 FEATURES q Operates in either RISC Reduced Instruction Set Computer mode or MIL-STD-1750A mode q Built-in multiprocessor bus arbitration and Direct Memory Access support (DMA) q Supports MIL-STD-1750A 32-bit floating-point

B1189

Abstract: mil-std-1750a MME transistor 401 4AX4 MIL-STD-1750 STD-1750A SI T37B t34l UT1750AR
Contextual Info: Standard Products UT1750AR RadHard RISC Microprocessor Data Sheet November 2000 FEATURES q Operates in either RISC Reduced Instruction Set Computer mode or MIL-STD-1750A mode q Built-in multiprocessor bus arbitration and Direct Memory Access support (DMA)

Photo Relays

Abstract: OCS37 OLD122 OCS32 OLD222 OC40 ocm220
Contextual Info: I PRODUCT LINE OLD122 LIGHT EMITTING DIODES OLD123 OLD124 OLD125 OLD127 OLD222 OLD222H OLD223 OLD224 OLD225 OLD232 OLD232-2 - OLD234 OLD2202 OLD22Û3 4 •P R O D U C T L IN E« PHOTO SENSORS Silicon PIN Photodiodes for Optical Communications " OD43L

ATS35

Contextual Info: Standard Products UT69R000 RadHard Microcontroller Data Sheet nils July 1998 M I C R O E L E C T R O N I C SYSTEMS □ Built-in 9600 baud UART Harvard architecture - 64K data space 1M instruction space □ Full military operating temperature range, -55°C to

t34k

Contextual Info: Standard Products UT69R000 RadHard MicroController Data Sheet October 2005 ̌ Built-in 9600 baud UART ̌ Full military operating temperature range, -55oC to +125oC, in accordance with MIL-PRF-38535 for Class Q or V ̌ Typical radiation performance: - Total dose: 1.0E6 rads Si

LB1824

Abstract: n4264 AGQJ ECL16
Contextual Info: ¡ZD .n -3 > ‘:7 a* te T op. EE II 33 M; Sa t ít B fB £@ H H H ii ÉÍD Ù—I il s j ro m if cü H m ÏK 08 A a » m ü i®? <8 m if c5 m / T a = 25t: fit -n ë <k A O Ms M Mb m M mm EE m m m if < » » i Ptií T m H NJ o □ n VC O V'K |J & m EE <

UT69R000

Abstract: assembly coding ut69r000 BRQ microcontroller RA16 RSN 311 W 64 B
Contextual Info: Standard Products UT69R000 RadHard MicroController Data Sheet July 2002 q Harvard architecture - 64K data space - 1M instruction space q High throughput engine - 2 clocks per instruction - 8 MIPS @ 16 MHz - Static design q 15 levels of interrupts - 8 external user defined interrupts

T08LA3C

Abstract: T28LA3C T12LA3C T25SA3C T16SA3C T35LA3C T18LA3C T38SA3C T15LA3C t42la3c
Contextual Info: EO and EO-2 Bite Type Fittings Catalog 4300 Part Data Union Tee T Metric Tube End All 3 Ends All dimensions in millimeters. Part no. * T04LLA3C * T06LLA3C * T08LLA3C * T10LLA3C T12LLA3C Series Working Pressure bar/psi LL very light 250 bar 3625 psi 100 bar

OLD122

Abstract: OC340 OD121 357 photo od43l T34L OC40 1r1h
Contextual Info: OUTLINE DIMENSIONS Unit : mm 1. Light-Emitting Diode OLD122 O L D 123 05.5*“ N - — •- H 04.6iat * ► Flat glass TO-18 stem 2-00.45 r I 2.54 1. Cathode 2. Anode (case) 108 -•OUTLINE DIMENSIONS# O LD 125 O LD 124 N 0 3 .0 * ° 20 — -►