10 35L A8 Search Results

51C69

Abstract: 51C68-35L 51C68 2148H 10 35L 51C68-30 51C68-35 290091
Contextual Info: 51C68 HIGH SPEED CHMOS 4096 x 4-BIT STATIC RAM 51C68-30 51C68-35 51C68-35L Max. Access Time ns 30 35 35 Max. Active Current (mA) 90 90 65 Max. Standby Current (mA) 10 10 5 Double Metal CHMOS III Technology High Density 20-Pin Package Completely Static Memory-No Clock

Contextual Info: intei 51C68 HIGH SPEED CHMOS 4096 x 4-BIT STATIC RAM 51C68-30 51C68-35 51C68-35L Max. Access Time ns 30 35 35 Max. Active Current (mA) 90 90 65 Max. Standby Current (mA) 10 10 5 Double Metal CHMOS III Technology High Density 20-Pin Package Completely Static Memory-No Clock

51C69

Abstract: acs 08 5s 290091
Contextual Info: intei 51C68 HIGH SPEED CHMOS 4096 x 4-BIT STATIC RAM 51C68-30 51C68-35 M ax. A c c e s s T im e ns 30 35 35 M ax. A ctive C urren t (m A ) 90 90 65 M ax. S tand by C u rren t (m A) 10 10 5 51C68-35L Double Metal CHMOS III Technology High Density 20-Pin Package

10 35L

Contextual Info: hEMTÖSS 00243^1 3b4 • M I T I MITSUBISHI LS Is M5M5259CP, J-15,-20,-25,-35, -20L,-25L,-35L 262144-BIT 65536-WORD BY 4-BIT CMOS STATIC RAM (WITH OE) DESCRIPTION The M5M5259C is a family of 65536 word by 4-bit static RAMs with OE input, fabricated with the high-performance

Contextual Info: blE D bSMTöBS 00SÜ031 215 IMITI MITSUBISHI LSIs M5M5257AP,J-25,-30,-35,-45, -30L,-35L,-45L 2 6 2 1 4 4 -B IT 2 6 2 1 4 4 -WORD BY l-B IT C M O S STATIC RAM MITSUBISHI (MEMORY/ASIC) DESCRIPTION P IN C O N F IG U R A T IO N (T O P V IE W ) The M5M5257A is a fam ily o f 262144-word by 1-bit static

Contextual Info: MITSUBISHI LS Is M 5 M 5 2 5 9 C P , J -1 5 ,-2 0 ,-2 5 ,-3 5 , -2 0 L ,-2 5 L ,-3 5 L 262144-BIT 65536-WORD BY 4-BIT CMOS STATIC RAM (WITH OE) DESCRIPTION The M5M5259C is a family of 65536 word by 4-bit static RAMs with 0E input, fabricated with the high-performance

Contextual Info: MITSUBISHI LS Is M5M5259CP, J-15,-20,-25,-35, -20L,-25L,-35L 262144-BIT 65536-WORD BY 4-BIT CMOS STATIC RAM (WITH OE) DESCRIPTION The M5M5259C is a family of 65536 word by 4-bit static PIN CONFIGURATION (TOP VIEW) RAMs with 0E input, fabricated with the high-performance

Contextual Info: MITSUBISHI LS Is M5M51004P,J-25,-35,-45,-25L,-35L,-45L 1048576-BIT 262144-WORD BY 4-BIT CMOS STATIC RAM DESCRIPTION The M5M51004 is a family of 262144-word by 4-bit static RAMs, fabricated with the high-performance CMOS silicon- PIN CONFIGURATION (TOP VIEW)

Contextual Info: MITSUBISHI LS Is M5M5257CP, J-15,-20,-25,-35, -20L,-25L,-35L 262144-BIT 262144-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION The M5M5257C is a family of 262144-word by 1-bit static RAMs, fabricated with the high-performance CMOS silicongate MOS process and designed for high-speed application. These

M5M51004

Contextual Info: M5M51004P,J-25,-35,-45,-25L,-35L,"4E L 1048576-BIT 262144-WORD BY 4-BIT) CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M5M51004 is a family of 262144-word by 4-bit static RAMs, fabricated with the high-performance CMOS silicon V c c (5 \0 gate process and designed for high-speed application. These

M5M5258cp

Abstract: 10 35L 5258C 10 35L A8
Contextual Info: MITSUBISHI LS Is M5M5258CP, J-15,-20,-25,-35, -20L,-25L,-35L 262144-BIT 65536-WORD BY 4-BIT CMOS STATIC RAM DESCRIPTION The M 5M 5258C is a fam ily o f 6 5 5 3 6 w ord by 4-bit static PIN CONFIGURATION (TOP VIEW) RAMs, fabricated w ith the high-performance CMOS silicongate

Contextual Info: I 1324^25 00214307 b?0 • M I T I M ITSUBISHILSIs M5M51001P,J-25, -35,-45, -25L,-35L,-45L 1048576-BIT 1048576-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M5M51001 is a family of 1048576-word by 1-bit static RAMs, fabricated with the high-performance CMOS silicon-

510042

Contextual Info: MITSUBISHI LS Is M5M51004P,J-25,-35,-45,-25L,-35L,-45L 1048576-BIT 262144-WORD BY 4-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M 5 M 5 1 0 0 4 is a fam ily o f 262144-w ord by 4-bit static RAMs, fabricated w ith the high-performance CMOS silicon

Contextual Info: b S 4 cî ô2 S 0D2433S 272 • M I T I M 5 M MITSUBISHILSIs 5 2 5 7 B P , J - 1 5 , - 1 7 , - 2 0 , - 2 5 ,- 3 5 , - 2 0 L , - 2 5 L , - 3 5 L 262144-BIT 262144-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION The M5M5257B is a family of 262144-word by 1-bit static

128K x 8 Static RAM

Abstract: 5962-8959812MYA 5962-8959810MZ
Contextual Info: L7C108 L7C109 128K x 8 Static RAM Pin Configuration     32-pin Ceramic DIP 32-pin Ceramic SOJ NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 CE2 WE A13

Contextual Info: PRELIMINARY INFORMATION L7C108 L7C109 128K x 8 Static RAM Pin Configuration 32-pin Ceramic DIP 32-pin Ceramic SOJ NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17

D-P5DW

Abstract: 10 35L W1 double acting cylinder 10 35L CAP CDQ2B63 D-J79W ya10 THREAD ROD 11-CQ2 CQ2B16-PS
Contextual Info: Compact Cylinder: Standard Type Double Acting, Single Rod Series CQ2 ø12, ø16, ø20, ø25, ø32, ø40, ø50, ø63, ø80, ø100 How to Order Without auto switch With auto switch CQ2 B 20 30 D CDQ2 B 20 30 D J79W S Built-in magnet Ȝ Ȝ Mounting style Ȝ B Through-hole Standard F Rod side flange style

H 9311

Abstract: 74LVT16501A SSOP56 TSSOP56
Contextual Info: This Material Copyrighted By Its Respective Manufacturer Philips Sem iconductors Product specification 3.3V 18-bit universal bus transceiver 3-State PIN CONFIGURATION 74LVT16501A LOGIC SYMBOL (IEEE/IEC) - -O EAB LEAB AO GND A1 A2 VC C A3

NG42

Contextual Info: 5 18120 J/TM 12 SONY CXK B 65,536-word x 18-bit High-Speed Bi-CMOS Static RAM Description C XK5B18120J/TM are high speed 1Mbit Bi-CMOS sta tic RAMs orga nize d as 6 5 ,5 3 6 -w o rd s-b y-1 8 -b its. Operating on a single 3.3V supply these asynchronous ICs are suitable for use in high speed and low power

U62H64

Abstract: ZMD AG
Contextual Info: U62H64 Automotive Fast 8K x 8 SRAM Features Description ! Fast 8192 x 8 bit static CMOS The U62H64 is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read - Standby - Write - Data Retention The memory array is based on a

IN2804

Contextual Info: HYM539400 M-Series •HYUNDAI 4M X 39-bit CMOS DRAM MODULE DESCRIPTION The HYM539400 is a 4M x 39-bit Fast page mode CMOS DRAM module consisting of ten HY5116400 in 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0. 22,1/ F decoupling capacitor is mounted for each DRAM.

Contextual Info: CY7C187A CYPRESS 64K x 1 Static RAM Features Functional Description • High speed location specified on the address pins A« through A 15 . The CY7C1H7A is a high-perform ance CM OS static RAM organized as 65,536 words by 1 bit. Easy memory expansion is

Contextual Info: IS62LV1024L IS62LV1024LL — 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM a d v a n c e in f o r m a t io n FEBRUARY 1997 FEATURES DESCRIPTION • Access times of 35, 45, 55, and 70 ns T he I S S I IS 62LV 1024L and IS62LV 1024LL are low pow er and low Vcc, 1 31,072-word by 8-bit C M O S static RAM s. T hey

TSOP 1378

Abstract: 62C1024 IS62LV1024L IS62LV1024LL
Contextual Info: IS62LV1024L IS62LV1024L/LL IS62LV1024LL ISSI 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM FEATURES • Access times of 35, 45, 50, and 70 ns • Low active power: 60 mW typical • Low standby power: 15 µW (typical) CMOS standby • Low data retention voltage: 2V (min.)