1.B SMD TRANSISTOR Search Results

smd code HF transistor

Abstract: TRANSISTOR SMD MARKING CODE KF transistor SMD t30 SMD Transistor t30 TRANSISTOR SMD MARKING CODE 5b TRANSISTOR SMD MARKING CODE LK TRANSISTOR SMD MARKING CODE XI smd transistor marking K7 transistor SMD MARKING CODE HF smd transistor marking L6 NPN
Contextual Info: Philips Semiconductors 7 1 1 DflE?b O D b ^ T ? 743 • P H I N Product specification BLU86 UHF power transistor FEATURES • SMD encapsulation • Emitter-ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability.

Transistors smd 1G

Abstract: SMD TRANSISTOR MARKING 1B smd transistor marking 1j SMD TRANSISTOR MARKING 1F SMD Transistor 1f marking 1A smd transistor 1l smd transistor marking 1L 1F transistor smd MARKING SMD TRANSISTOR 1j
Contextual Info: Transistors SMD Type NPN Transistor KC846A,B/KC847A,B,C/KC848A,B,C BC846A,B/BC847A,B,C/BC848A,B,C SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Ideally suited for automatic insertion 0.4 3 1 0.55 For Switching and AF Amplifier Applications

SDA04

Contextual Info: Surface-mount Power Transistor Array SDA04 Electrical Characteristics External Dimensions SMD-16A V VBB1 V 10 VBB2 (V) –5 IB1 (mA) –50 IB2 (mA) 50 t on (µs) 0.4 t stg (µs) 1.75 tf (µs) 0.22 9 a b Pin 1 8 20.0max ±0.2 19.56 1.4±0.2 IC (A) 1 +0.15

Contextual Info: SO T8 83 B PMZB950UPE 20 V, P-channel Trench MOSFET 28 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench

SDA03

Contextual Info: Surface-mount Power Transistor Array SDA03 External Dimensions SMD-16A V VBB1 V 10 VBB2 (V) –5 IB1 (mA) –50 IB2 (mA) 50 t on (µs) 0.4 t stg (µs) 1.75 9 a b Pin 1 tf (µs) 0.22 8 20.0max 19.56±0.2 1.4±0.2 IC (A) 1 +0.15 0.3 –0.05 4.0max RL (Ω)

Contextual Info: Surface-mount Power Transistor Array SDA04 External Dimensions SMD-16A VBB1 V –10 VBB2 (V) 5 IB1 (mA) –50 +0.15 0.3 –0.05 IB2 (mA) 50 t on (µs) 0.4 t stg (µs) 1.75 tf (µs) 0.22 b Pin 1 8 20.0max ±0.2 19.56 1.4±0.2 IC (A) –1 9 a 6.8max V 4.0max

transistor smd marking BA

Abstract: transistor smd marking bb transistor BC 550 transistor smd marking BA sot-23 transistor smd marking BC BCW61B bc transistor icbo nA MARKING SMD PNP TRANSISTOR transistor smd ba rs TRANSISTOR BC 550 b
Contextual Info: Transistors IC SMD Type General Purpose Transistor BCW61A/B/C/D Features SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 PNP Epitaxial Silicon Transistor 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05

Contextual Info: Transistors IC SMD Type Product specification BCW60A/B/C/D SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 NPN epitaxial silicon transistor. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01

tlp627-2 smd

Abstract: tlp120 smd SMD transistor zc TLP280-4 pin out TLP523-1 tlp620-1 toshiba transistor smd code 2500VRMS tlp3063 smd smd THYRISTOR
Contextual Info: OPTOELECTRONICS OPTO-ISOLATORS PHOTO COUPLERS continued SMD DIL TRANSISTOR OUTPUT, no base connection, AC input DIL PACKAGE Manf. Part No. & Order Code Manufacturer TLP620 TLP620 GB TLP620-2 TLP620-2(GB) TLP620-4 TLP620-4(GB) Channels Toshiba 1 1 2 2 4 4

Contextual Info: Transistors IC Transistors Diodes SMD Type SMD Type Product specification KC846A,B/KC847A,B,C/KC848A,B,C BC846A,B/BC847A,B,C/BC848A,B,C SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Ideally suited for automatic insertion 0.4

TLP181

Abstract: opto TLP181 tlp521 SMD 6 pin TRANSISTOR SMD CODE 1A TLP521-1A tlp181 opto TLP181-GB TLP521 3750VRMS TLP521-2A
Contextual Info: OPTOELECTRONICS PHOTO COUPLERS OPTO-ISOLATORS SMD DIL TRANSISTOR OUTPUT DIL PACKAGE Manf. Part No. & Order Code CNY17-2 CNY17-3 4N25 4N26 4N35 4N36 PIN OUT A Manufacturer Channels Vishay-Telefunken 1 ch. Toshiba 1 ch. 1 6 2 5 3 4 min. C.T.R. typ. 63% 100%

st smd IC marking code

Abstract: 2N5154ESYHRT
Contextual Info: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet - production data Features 2 TO-39 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 3 1 TO-257 2 3 1 • Hi-Rel NPN bipolar transistor • Linear gain characteristics

SMD TRANSISTOR MARKING 5c

Abstract: smd transistor 5c TRANSISTOR SMD MARKING CODE 5c TRANSISTOR SMD MARKING CODE 3f transistor smd code marking 101 transistor smd code marking 102 TRANSISTOR SMD MARKING CODE 3G 5c smd transistor TRANSISTOR SMD MARKING CODE 3L SMD TRANSISTOR MARKING 3B
Contextual Info: COMCHIP Small Signal Transistor SMD Diodes Specialist BC856AW-G Thru. BC858CW-G PNP RoHS Device Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications -Power dissipation PCM: 0.15W (@TA=25 OC) -Collector current ICM: -0.1A

520301006R

Abstract: 2N5154RESYHRG
Contextual Info: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet - production data Features 2 TO-39 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 3 1 TO-257 2 1 3 • Hi-Rel NPN bipolar transistor • Linear gain characteristics

TRANSISTOR SMD CODE 15

Abstract: smd code transistor transistor smd npn ac smd transistor code 14 smd transistor 14 transistor smd w transistor smd wu SMD Transistor SA SMD TRANSISTOR 2SD669A
Contextual Info: SMD Power Transistor NPN 2SD669XD/2SD669AXD SMD Power Transistor (NPN) Features • Designed for general purpose power applications • Rugged and reliable • RoHS compliance D-PACK (TO-252) Mechanical Data Case: D-PACK(TO-252), Plastic Package Terminals:

Contextual Info: SMD Type SMD Type Transistors IC Product specification BSS80,BSS82 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low collector-emitter saturation voltage. 0.55 High DC current gain: 0.1mA to 500 mA. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1

w1p npn

Abstract: SOT23 W1P SOT-23 marking r1p SMD MARKING CODE v3p SMD sot23 marking E6 w1p 60 "W1P" w1p 73 MARKING W1P SMD W1P
Contextual Info: 11 W id eb an d SMD Transistors Wideband SMD® Transistors Description Mechanical Data Philips Components wideband transistors are the result of leading-edge technology dedicated to expanding perfor­ mance and selection in the wideband arena. The devices are

Contextual Info: 6N135, 6N136 www.vishay.com Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output FEATURES NC 1 8 C VCC • Isolation test voltages: 5300 VRMS A 2 7 B (VB) • TTL compatible C 3 6 C (VO) • High bit rates: 1 Mbit/s NC 4

SMU30N03-30L

Abstract: q3020 smu30n03 SMD30N03-30L
Contextual Info: Tem ic SMD/SMU30N03-30L S em i co n d u c t or s N-Channel Enhancement-Mode Transistors, Logic Level Product Summary VDS V IDa (A) r DS(on) ( ^ ) 0.030 30 30 TO-251 TO-252 D P o o H r Drain Connected to Tab G D S Top View Ô G D S Top View Order Number:

0545l

Abstract: d25n
Contextual Info: Tem ic SMD/SMU25N05-45L Siliconix N-Channel Enhancement-Mode Transistors, Logic Level 175 °C Maximum Junction Temperature Product Summary rusfw i 50 «& •< « 0.045 25 TO-251 TO-252 o o in r G D D rain C o n n ected to la b S Top View Ci O rd e r N um ber:

2SA1200

Abstract: smd marking Y 2SC2880 SMD B100
Contextual Info: Transistors SMD Type High Voltage Switching Applications 2SA1200 Features High Voltage : VCEO = -150V High Transition Frequency : fT = 120MHz typ. Small Flat Package Complementary to 2SC2880 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage

SMU25N05-45L

Abstract: SMD25N05-45L smu25n05 SMD25N05 SMD25N0545L
Contextual Info: Tem ic SMD/SMU25N05-45L Siliconix N-Channel Enhancement-Mode Transistors, Logic Level 175 °C Maximum Junction Temperature Product Summary VDS V 50 rDS(on) (Q) 0.045 Id 3 (A) 25 TO-251 TO -252 D Q o It o o— ^ Drain Connected to Tab G D S Top View Order Number:

Contextual Info: SFH6325, SFH6326 www.vishay.com Vishay Semiconductors High Speed Optocoupler, Dual Channel, 1 MBd, Transistor Output FEATURES A1 1 8 C VCC C1 2 7 C1(VO1) C2 3 6 C2(VO2) 4 5 E(GND) A2 i179071-3 • • • • • • • V D E i179026 DESCRIPTION Isolation test voltage, 5300 VRMS

SMD W2f sot23

Abstract: SOT-23 marking w2f W2f 01
Contextual Info: Transistors SMD Type Product specification KMBT2907 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 1 0.55 ● Power Dissipation :PD=250mW +0.1 1.3-0.1 +0.1 2.4-0.1 ● Collector Current to Continuous :IC= -600mA 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1