1.6V ZENER DIODE Search Results

Contextual Info: HZ Series SILICON EPITAXIAL PLANER ZENER DIODES FOR STABILIZED POWER SUPPLY Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener

HZS3C3

Abstract: HZS3A1 HZS7A1 HZS5B2 HZS7A3 HZS11A1 HZS11A2 HZS11B1 HZS11B2 HZS11C1
Contextual Info: HZS Series SILICON EPITAXIAL PLANER ZENER DIODES for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener

HZ7C1

Abstract: hz15 HZ11A1 HZ11A2 HZ11A3 HZ11B1 HZ11B2 HZ11B3 HZ11C1 HZ11C2
Contextual Info: HZ Series SILICON EPITAXIAL PLANER ZENER DIODES FOR STABILIZED POWER SUPPLY Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener

HZS5C3

Abstract: HZS11A1 HZS11A2 HZS11A3 HZS11B1 HZS11B2 HZS11B3 HZS11C1 HZS11C2 HZS11C3
Contextual Info: HZS Series SILICON EPITAXIAL PLANER ZENER DIODES for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener

ZENER DIODE 1233

Abstract: GRZZ0002ZC-A HZS11 HZS12 HZS15 HZS16 HZS18 HZS20 HZS22 HZS24
Contextual Info: HZS Series Silicon Planar Zener Diode for Stabilized Power Supply REJ03G0184-0400 Rev.4.00 Jul 06, 2006 Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.

zener hitachi

Abstract: zener 5.1 B2 zener mark code A2 hzs6b2 Hitachi DSAUTAZ006 ECG 177 zener diode zener series hzs
Contextual Info: HZS Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply ADE-208-120B Z Rev. 2 Nov. 1999 Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.

HZ11

Abstract: HZ12 HZ15 HZ16 HZ18 HZ20 HZ22 HZ24 HZ27 4.7 B2 zener 121
Contextual Info: HZ Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply ADE-208-117B Z Rev. 2 Nov. 1999 Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.

4.7 B2 zener

Abstract: zener diode 5.6 b3 ECG 177 zener diode HZ11 HZ12 HZ15 HZ16 HZ18 HZ20 HZ30-2
Contextual Info: HZ Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply ADE-208-117B Z Rev 2 Nov 1999 Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.

Hitachi DSA002725

Contextual Info: HZS Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply ADE-208-120B Z Rev 2 Nov 1999 Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.

FGD2N40

Abstract: FGD2N40L
Contextual Info: FGD2N40L 400V N-Channel Logic Level IGBT Features General Description „ VCE SAT = 1.6V @ IC = 2.5A, VGE = 2.4V This N-Channel IGBT is a MOS gated, logic level device which has been especially tailored for small engine ignition applications. The gate is ESD protected with a zener diode.

HZS9A2

Abstract: HZS3C3 diode HZS2A1 HZS7A1 HZS7B3 zener HZS7A2 hzs5b2 ta HZS4A1 HZS7A3 HZS11A3
Contextual Info: HZS Series min. 27.5 SILICON EPITAXIAL PLANER ZENER DIODES for Stabilized Power Supply Features • Low leakage, low zener impedance and maximum max. 2.9 White Cathode Band Part No. Black Color power dissipation of 400 mW are ideally suited for max. 1.9 min. 27.5

512-1N4750A

Abstract: 512-1N4148WS 512-BAS19 rurg3020c SOT23 reverse voltage 600v MMSD4448 BAW74 BAS16HT1G SOD-80 1000V SOT-23 187
Contextual Info: ZENER DIODES CONT. For quantities greater than listed, call for quote. For quantities greater than listed, call for quote. MOUSER STOCK NO. Mfr. Mfr. Part No. 512-1N4749AT50A 512-BZX85C24 512-1N4750A 512-1N4750ATR 512-1N4751A 512-1N4751ATR 512-BZX85C30 Package

c2 zener renesas

Abstract: B2 Zener HZS11 HZS12 HZS15 HZS16 HZS18 HZS20 HZS24 HZS30
Contextual Info: HZS Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply REJ03G0184-0300Z Previous: ADE-208-120B Rev.3.00 Mar.11.2004 Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized

AUTOMATIC dim dip CONTROLLER

Abstract: IR2159 C 12 PH Zener diode zener diode IPH 175C PD60169A 5V power supply transformerless 156V C 15 PH Zener diode CSD2V
Contextual Info: ADVANCED INFORMATION Data Sheet No. PD60169A IR2159 DIMMING BALLAST CONTROLLER IC Features • • • • • • • • • • Ballast control and half-bridge driver in one IC • Transformerless lamp power sensing • Closed-loop lamp power control • Closed loop preheat and ignition current control

NTE2013

Abstract: wiring a NTE2013
Contextual Info: NTE2011/NTE2012/NTE2013/NTE2014/NTE2015 Integrated Circuit 7–Channel Darlington Array/Driver Description: The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic substrate. All units have open–collector outputs and integral diodes for inductive load transient suppression.

IR2159

Abstract: half bridge 600V MOSFET driver IC 175C ignition IGBTS Ignition Transformer MOSFET driver 175C C2V10 programmable ignition timing ballast 300 watt ignition timing C2V100
Contextual Info: Data Sheet No. PD60169-B IR2159/IR21591 DIMMING BALLAST CONTROL IC Features • • • • • • • Ballast control and half-bridge driver in one IC • Transformer-less lamp power sensing • Closed-loop lamp power control • Closed-loop preheat current control

diode Marking code v3

Contextual Info: Supertex inc. LN100 1200V Cascoded N-Channel MOSFET Features ►► ►► ►► ►► ►► ►► ►► General Description The LN100 is a 1200V cascoded N-channel MOSFET with an integrated high value high voltage resistor divider. Multiple devices can be used in series for voltages

LN-100

Abstract: diode Marking code v3 LN100
Contextual Info: Supertex inc. LN100 1200V Cascoded N-Channel MOSFET Features ►► ►► ►► ►► ►► ►► ►► General Description The LN100 is a 1200V cascoded N-channel MOSFET with an integrated high value high voltage resistor divider. Multiple devices can be used in series for voltages

DSFP-LN100

Abstract: LN-100S diode Marking code v3 BVDSS1 high voltage shunt regulator source gate m2 ZENER DIODE
Contextual Info: Supertex inc. LN100 1200V Cascoded N-Channel MOSFET Features ►► ►► ►► ►► ►► ►► ►► General Description The LN100 is a 1200V cascoded N-channel MOSFET with an integrated high value high voltage resistor divider. Multiple devices can be used in series for voltages

0610L

Abstract: BF162 transistor vn2222l zener diode 1.18v 300mV VN2222L converter circuit dc to Dc 2V to 12V design ideas Single-Stage Flyback thermopiles
Contextual Info: L DESIGN IDEAS J-FET-Based DC/DC Converter Starts and Runs from 300mV Supply by Jim Williams A J-FET’s self-biasing characteristic can be utilized to construct a DC/DC converter powered from as little as 300mV. Solar cells, thermopiles and single stage fuel cells, all with outputs below 600mV, are typical power

C2V10

Abstract: IR2159
Contextual Info: Data Sheet No. PD60169-C IR2159/IR21591 DIMMING BALLAST CONTROL IC Features • • • • • • • Ballast control and half-bridge driver in one IC • Transformer-less lamp power sensing • Closed-loop lamp power control • Closed-loop preheat current control

Contextual Info: Data Sheet No. PD60194 revC IR21592 S & (PbF) IR21593(S) & (PbF) DIMMING BALLAST CONTROL IC Features • Full lamp fault protection • Brown-out protection • Automatic restart • Micro-power startup • Zener clamped Vcc • Over-temperature protection

C2V10

Abstract: ir2159 C2V100
Contextual Info: Data Sheet No. PD60169-C IR2159/IR21591 DIMMING BALLAST CONTROL IC Features • • • • • • • Ballast control and half-bridge driver in one IC • Transformer-less lamp power sensing • Closed-loop lamp power control • Closed-loop preheat current control

IR21592

Abstract: ZENER DIODE 5.1V power supply igbt ignition ignition IGBTS ignition mosfet Ignition Transformer IR2159 IR21593 MS-012AC V100
Contextual Info: Data Sheet No. PD60194_A IR21592 S IR21593(S) DIMMING BALLAST CONTROL IC Features • Full lamp fault protection • Brown-out protection • Automatic restart • Micro-power startup • Zener clamped Vcc • Over-temperature protection • 16-pin DIP and SOIC package types