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TC40U250

Abstract: GENTRON ES BT082 GENTRON BT081 2SC1442 entron
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 20 SDT79823 SDT79823 SCA14026 SCA14027 2N6060 2N6062 2N6274 2N6278 ~~~~5~ 25 30 SCA14024 SCA14025 2N6032 2N6275 2N6279 BUT90 BUT90 BUT90 ~~~~g 35 40 BUV60 BUW50 (A) BUV20 BUX20 2N6276 2N6280 SML55405 PT7508

BOW93C

Abstract: box33c BOV65B B0701 b0651 BOT63B BOX83C BOX63B BOW83C bow530
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ie Max (A) Po Max (W) hFE Min fT Max (HZl leBO Max (A) t, tf Max (8) Max (8) Toper Max ee) Package Style NPN Darlington Transistors, (Co nt' d) 5 10 2501196 B0267B B0267B 2501230 BD649

BOX34B

Abstract: bot64a BOX54B sgs-ates transistors bot64 B064S MJ0117 BOW94B BOV64 MJ-01
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ie Max (A) PD Max (W) fT hFE Min Max (Hz) leBO Max (A) tr Max tf Max TOper Max (8) (8) (Oe) Package Style PNP Darlington TransisLors, (Cont'd) 2N6041 2SBS72A 2SB939A 2SB951A BOX54B B0266A

collect

Abstract: MUN5211 MUN5212 MUN5213 MUN5214 MUN5215 MUN5216 MUN5230 MUN5231 MUN5232
Contextual Info: MUN5211 Series NPN Silicon Bias Resistor Transistor 3 P b Lead Pb -Free R1 1 R2 2 SOT-323(SC-70) Maximum Ratings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol VCEO Value 50 VCBO

Contextual Info: MUN5211 Series NPN Silicon Bias Resistor Transistor 3 * “G” Lead Pb -Free R1 1 R2 2 SOT-323(SC-70) Maximum Ratings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol VCEO Value

MUN5111

Abstract: MUN5111DW MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130 MUN5131 MUN5132
Contextual Info: MUN5111DW Series Dual Bias Resistor Transistor PNP Silicon 6 5 R1 Q2 R2 1 4 6 5 R2 1 Q1 R1 2 2 4 3 SOT-363 SC-88 3 M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol

6a mun2111

Abstract: MUN2112 MUN2111 transistor mun2111 MUN2114 MUN2115 MUN2116 MUN2130 MUN2131 MUN2132
Contextual Info: MUN2111 Series Bias Resistor Transistor PNP Silicon COLLECTOR 3 3 R1 1 BASE 2 R2 1 2 EMITTER SC-59 Maximum Ratings TA=25 C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO 50 Collector-Base Voltage VCBO 50 Vdc Vdc IC 100 mAdc Rating

MUN2111

Abstract: MUN2112 MUN2113 MUN2114 MUN2115 MUN2116 MUN2130 MUN2131 MUN2132
Contextual Info: MUN2111 Series Bias Resistor Transistor PNP Silicon COLLECTOR 3 3 R1 1 BASE 1 R2 2 2 EMITTER SC-59 Maximum Ratings TA=25 C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO 50 Collector-Base Voltage VCBO 50 Vdc Vdc IC 100 mAdc Rating

50K MARKING SOT23

Contextual Info: MMBTA70LT1 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR SURFACE MOUNT SMALL SIGNAL TRANSISTORS ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Package:SOT-23 Shandong Yiguang Electronic Joint stock Co., Ltd Characteristic Symbol Rating Unit Collector-Emitter Voltage

Contextual Info: General Purpose Transistor PNP Silicon MMBTA70LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS CASE 318–08, STYLE 6 Rating Symbol Value Unit Collector–Emitter Voltage V CEO –40 Vdc Emitter–Base Voltage V EBO –4.0 Vdc –100 mAdc Collector Current — Continuous

Contextual Info: BCW29/30LT1 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR SURFACE MOUNT SMALL SIGNAL TRANSISTORS ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Package:SOT-23 Shandong Yiguang Electronic Joint stock Co., Ltd Characteristic Symbol Rating Unit Collector-Base Voltage

M31 transistor

Abstract: M313 TRANSISTOR M31 marking transistor M31 marking M31 x 1.0 6H MMBTA70LT1
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon MMBTA70LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS CASE 318–08, STYLE 6 Rating Symbol Value Unit Collector–Emitter Voltage V CEO –40 Vdc Emitter–Base Voltage V EBO –4.0

TW88

Abstract: MUN5111 MUN5111DW MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130 MUN5131
Contextual Info: MUN5111DW Series 6 Dual Bias Resistor Transistor PNP Silicon 5 4 R1 Q2 6 5 1 Q1 R2 2 2 3 SOT-363 SC-88 R1 1 4 R2 3 M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol

BCW60ALT1

Contextual Info: BCW60LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Collector Current: Ic= 100mA * High Total Power Dissipation:Pc=225mW ABSOLUTE MAXIMUM RATINGS at Ta=25℃

transistor M7A

Abstract: M7A transistor
Contextual Info: General Purpose Transistors PNP Silicon 3 COLLECTOR BCW29LT1 BCW30LT1 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO –32 Vdc Collector–Base Voltage V CBO –32 Vdc Emitter–Base Voltage V –5.0 Vdc –100

Contextual Info: General Purpose Transistor PNP Silicon MMBTA70LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS CASE 318–08, STYLE 6 Rating Symbol Value Unit Collector–Emitter Voltage V CEO –40 Vdc Emitter–Base Voltage V EBO –4.0 Vdc –100 mAdc Collector Current — Continuous

mdp1403

Abstract: 330 ohm resistor pack MDP1801 MDP1405 MDP1603 MDP18 MDP1401 MDP1601 MDP1605 MDP18-01
Contextual Info: MODELS MDP14, MDP16, MDP18 Thick Film Resistor Networks Dual-ln-Line, Molded 01, 03, 05 Schematics FEATURES • .160“ [4.06] maximum seated height •Reduces total assembly costs • Rugged, molded case construction ■Compatible with automatic inserting equipment

Contextual Info: A C O M P A N Y OF M O DELS M D P 1 4 M D P 16, M D P 18 T h ic k Film R e s is to r N e tw o rk s Dual-ln-Line, Molded 01, 03, 05 Schem atics FEATURES • .160" [4.06] maximum seated height Reduces total assembly costs • Rugged, molded case construction

QL8X12B-XPL68C

Abstract: 80c96 1X3HDR PT3868 C458 R486 r946 MODJACK MT4C16270DJ-6 CR69
Contextual Info: A SWITCHED ETHERNET REFERENCE DESIGN SCHEMATICS Switched Ethernet Reference Design Description Order Number: 272907-001 July, 1996 Appendix A: Switched Ethernet Reference Design Schematics Index to Reference Design Schematics Circuit Sheets +3.3V Supply for Processor .3

BCW29

Abstract: BCW29LT1 BCW30 BCW30LT1 M74 marking MARKING M73
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon 3 COLLECTOR BCW29LT1 BCW30LT1 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO –32 Vdc Collector–Base Voltage V CBO –32 Vdc Emitter–Base Voltage

MPS3904

Abstract: 1N916 MMBTA20LT1 MPS390
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Amplifier NPN Silicon MMBTA20LT1 3 COLLECTOR 3 1 BASE 1 2 EMITTER 2 CASE 318–08, STYLE 6 SOT–23 TO–236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Emitter–Base Voltage

Contextual Info: General Purpose Amplifier NPN Silicon MMBTA20LT1 3 COLLECTOR 3 1 BASE 1 2 EMITTER 2 CASE 318–08, STYLE 6 SOT–23 TO–236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Emitter–Base Voltage V EBO 4.0 Vdc IC 100 mAdc

ATIC 91

Abstract: ATIC 62 MDP1405
Contextual Info: MODELS MDP14 and MDP16 Thick Film Resistor Networks Dual-In-Line, Molded DIP 01, 03, 05 Schematics FEATURES .160" [4.06mm] maximum seated height Reduces total assembly costs Rugged, molded case construction Compatible with automatic inserting equipment Highly stable thick film

2N6258

Abstract: 2N5133 2N4901 2N5055 2N5129 2N5143 2N5872 2N6030 2N6132 2N6278
Contextual Info: _ 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR 82D 0 0 0 4 6 D ~J - o ÔE DEI 0250354 □0D0G4b 4T SILICON ADVANCED SEMICONDUCTOR .T R A N S I S T O R S POLARITY PNP PNP PNP' PNP PNP PNP PNP PNP PNP PNP NPN NPN NPN NPN NPN NPN